308 Constitution Drive
Menlo Park, CA 94025-1164
Phone: 800-227-4856
www.circuitprotection.com
SiBar™
Thyristor Surge Protectors
Raychem Circuit Protection Products
PRODUCT: TVB170SC-L
DOCUMENT: SCD 25897
PCN: F01905
REV LETTER: B
REV DATE: APRIL 28, 2007
PAGE NO.: 2 OF 2
DEVICE RATINGS @ 25º C (Both Polarities)
Parameter Symbol Value Units
Repetitive Off-State Voltage, Maximum at ID = 5 µA VDM 170 V
Non-Repetitive Peak Telcordia GR-1089 CORE 10x1000 µs
Impulse Current TIA-968 lightning Type A Metallic 10/560 µs
Double exponential TIA-968 lightning Type A Longit. 10/160 µs
Waveform Telcordia GR-1089 Intrabuilding 2/10 µs
(Notes 1 and 2) IEC61000-4-5 (Voc 1.2/50us) 8/20 µs
ITU-T K.20/K.21 (Voc 10/700us) 5/310 µs
TIA-968 lightning Type B (Voc 9/720us) 5/320 µs
IPP
1
IPP
2
IPP
3
IPP
4
IPP
5
IPP
6
IPP
7
100
150
200
500
400
150
150
A
A
A
A
A
A
A
Critical Rate of Rise of On-State Current
Power Pulse Amplifier, C
=30µF, Vmax = 600V
Maximum 2x10 µsec waveform, V
OC
=2.5kV, I
SC
=500A peak
di/dt
di/dt
500
330
A/µs
A/µs
DEVICE THERMAL RATINGS
Storage Temperature Range TSTG -55 to 150 ºC
Operating Temperature Range
Blocking or conducting state
TA -40 to 125 ºC
Overload Junction Temperature
Maximum; Conducting state only
TJ +150 ºC
Maximum Lead Temperature for Soldering Purpose; for 10 seconds TL +260 ºC
ELECTRICAL CHARACTERISTICS Both polarities (T
J
@ 25ºC unless otherwise noted)
Characteristics Symbol Min Typ Max Units
Breakover Voltage (+25ºC)
(dv/dt = 0.4kV/µsec, I
SC
=900mA, V
DC
= 500V (both polarities))
VBO ---- 230 265 V
Breakover Voltage Temperature Coefficient dVBO/dTJ ---- 0.1 ----- %/ºC
Off-State Current (VD1= 50V)
(VD2=VDM)
ID1
ID2=IDM
----
----
-----
-----
2.0
5.0
µA
µA
On-State Voltage (IT=1A)
(PW ≤ 300 µsec, Duty Cycle ≤ 2% (Note 2))
VT ---- ----- 4.0 V
Breakover Current IBO ---- ----- 800 mA
Holding Current (Note 2) IH 150 ----- ---- mA
Peak Onstage Surge Current
(Measured @ 60Hz, 1 cycle, 600V)
ITSM 60 ---- ---- A
Critical Rate of Rise of Off-State Voltage
(Linear waveform, V
D
= 0.8 X Rated V
BO
, T
J
= +25ºC)
dv/dt 5000 ---- ---- V/µs
Capacitance (f=1.0 Mhz, 50Vdc bias, 1 Vrms)
(f=1.0 Mhz, 2Vdc bias, 1Vrms)
C1
C2
----
----
60
125
----
pF
pF
Note 1. Allow cooling before test second polarity
Note 2. Measured under pulse conditions to reduce heating
VOLTAGE-CURRENT CHARACTERISTIC
