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IXTP3N100P

P1-P3P4-P4
IXYS reserves the right to change limits, test conditions, and dimensions.
IXTA3N100P IXTP3N100P
IXTH3N100P
IXYS REF: T_3N100P(3C)10-31-06
Fig. 7. Input Admittance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
33.544.555.566.5
V
GS
- Volts
I
D
- Amperes
T
J
= 125ºC
25ºC
-40ºC
Fig. 8. Transconductance
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0 0.5 1 1.5 2 2.5 3 3.5 4
I
D
- Amperes
g
f s
- Siemens
T
J
= - 40ºC
125ºC
25ºC
Fig. 9. Forward Voltage Drop of
Intrinsic Diode
0
1
2
3
4
5
6
7
8
9
0.4 0.5 0.6 0.7 0.8 0.9
V
SD
- Volts
I
S
- Amperes
T
J
= 125ºC
T
J
= 25ºC
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 5 10 15 20 25 30 35 40
Q
G
- NanoCoulombs
V
GS
- Volts
V
DS
= 500V
I
D
= 1.5A
I
G
= 1mA
Fig. 11. Capacitance
10
100
1,000
10,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - PicoFarads
f
= 1 MHz
C
iss
C
rss
C
oss
Fig. 12. Maximum Transient Thermal
Resistance
0.01
0.10
1.00
10.00
0.00001 0.0001 0.001 0.01 0.1 1 10
Pulse Width - Seconds
Z
(th)JC
- ºC / W
P1-P3P4-P4

IXTP3N100P

Mfr. #:
Buy IXTP3N100P
Manufacturer:
Littelfuse
Description:
MOSFET 3 Amps 1000V 4.8 Rds
Lifecycle:
New from this manufacturer.
Delivery:
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