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BTA204X-600C,127

P1-P3P4-P6P7-P9P10-P12P13-P14
NXP Semiconductors
BTA204X-600C
3Q Hi-Com Triac
BTA204X-600C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 May 2014 6 / 13
8. Thermal characteristics
Table 5. Thermal characteristics
Symbol Parameter Conditions Min Typ Max Unit
full cycle or half cycle; with heatsink
compound; Fig. 6
- - 5.5 K/WR
th(j-h)
thermal resistance
from junction to
heatsink
full cycle or half cycle; without heatsink
compound; Fig. 6
- - 7.2 K/W
R
th(j-a)
thermal resistance
from junction to
ambient
in free air - 55 - K/W
003aad613
t
p
(s)
10
-5
1 1010
-1
10
-2
10
-4
10
-3
1
10
-1
10
Z
th(j-h)
(K/W)
10
-2
(1)
(2)
(4)
(3)
t
p
P
t
(1) Unidirectional (half cycle) without heatsink compound
(2) Unidirectional (half cycle) with heatsink compound
(3) Bidirectional (full cycle) without heatsink compound
(4) Bidirectional (full cycle) with heatsink compound
Fig. 6. Transient thermal impedance from junction to heatsink as a function of pulse width
9. Isolation characteristics
Table 6. Isolation characteristics
Symbol Parameter Conditions Min Typ Max Unit
V
isol(RMS)
RMS isolation voltage from all terminals to external heatsink;
sinusoidal waveform; clean and dust
free; 50 Hz ≤ f ≤ 60 Hz; RH ≤ 65 %;
T
h
= 25 °C
- - 2500 V
C
isol
isolation capacitance from main terminal 2 to external
heatsink; f = 1 MHz; T
h
= 25 °C
- 10 - pF
NXP Semiconductors
BTA204X-600C
3Q Hi-Com Triac
BTA204X-600C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 May 2014 7 / 13
10. Characteristics
Table 7. Characteristics
Symbol Parameter Conditions Min Typ Max Unit
Static characteristics
V
D
= 12 V; I
T
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 7
- - 35 mA
V
D
= 12 V; I
T
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 7
- - 35 mA
I
GT
gate trigger current
V
D
= 12 V; I
T
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 7
- - 35 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G+;
T
j
= 25 °C; Fig. 8
- - 20 mA
V
D
= 12 V; I
G
= 0.1 A; T2+ G-;
T
j
= 25 °C; Fig. 8
- - 30 mA
I
L
latching current
V
D
= 12 V; I
G
= 0.1 A; T2- G-;
T
j
= 25 °C; Fig. 8
- - 20 mA
I
H
holding current V
D
= 12 V; T
j
= 25 °C; Fig. 9 - - 20 mA
V
T
on-state voltage I
T
= 5 A; T
j
= 25 °C; Fig. 10 - 1.4 1.7 V
V
D
= 12 V; I
T
= 0.1 A; T
j
= 25 °C;
Fig. 11
- 0.7 1 VV
GT
gate trigger voltage
V
D
= 600 V; I
T
= 0.1 A; T
j
= 125 °C;
Fig. 11
0.25 0.4 - V
I
D
off-state current V
D
= 600 V; T
j
= 125 °C - 0.1 0.5 mA
Dynamic characteristics
dV
D
/dt rate of rise of off-state
voltage
V
DM
= 402 V; T
j
= 125 °C; (V
DM
= 67%
of V
DRM
); exponential waveform; gate
open circuit
1000 - - V/µs
dI
com
/dt rate of change of
commutating current
V
D
= 400 V; T
j
= 125 °C; I
T(RMS)
= 4 A;
dV
com
/dt = 20 V/µs; (snubberless
condition); gate open circuit
3 - - A/ms
NXP Semiconductors
BTA204X-600C
3Q Hi-Com Triac
BTA204X-600C All information provided in this document is subject to legal disclaimers. © NXP Semiconductors N.V. 2014. All rights reserved
Product data sheet 19 May 2014 8 / 13
T
j
(°C)
-50 150100500
003aad600
1
2
3
I
GT
0
(1)
(2)
(3)
I
GT(25°C)
(1) T2- G-
(2) T2+ G-
(3) T2+ G+
Fig. 7. Normalized gate trigger current as a function of
junction temperature
T
j
(°C)
-50 150100500
003aad604
1
2
3
I
L
0
I
L(25°C)
Fig. 8. Normalized latching current as a function of
junction temperature
T
j
(°C)
-50 150100500
003aad606
1
2
3
I
H
0
I
H(25°C)
Fig. 9. Normalized holding current as a function of
junction temperature
V
T
(V)
0 321
003aad611
4
8
12
I
T
(A)
0
(2) (3)
(1)
Vo = 1.27 V; Rs = 0.091 Ω
(1) Tj = 125 °C; typical values
(2) Tj = 125 °C; maximum values
(3) Tj = 25 °C; maximum values
Fig. 10. On-state current as a function of on-state
voltage
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BTA204X-600C,127

Mfr. #:
Buy BTA204X-600C,127
Manufacturer:
WeEn Semiconductors
Description:
Triacs RAIL TRIAC
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New from this manufacturer.
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