SGB07N120ATMA1 Datasheet SGB07N120ATMA1 | P1-P3

SGB07N120

Power Semiconductors

1 Rev. 2_2 Apr 07

Fast IGBT in NPT-technology

• lower E

off

compared to previous generation

• Short circuit withstand time – 10 µs

• Designed for:

- Motor controls

- Inverter

- SMPS

• NPT-Technology offers:

- very tight parameter distribution

- high ruggedness, temperature stable behaviour

- parallel switching capability

• Qualified according to JEDEC

1

for target applications

• Pb-free lead plating; RoHS compliant

• Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Type

V

CE

I

C

E

off

T

j

Marking Package

SGB07N120 1200V 8A 0.7mJ

150°C

GB07N120 PG-TO-263-3-2

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

V

CE

1200 V

DC collector current

T

C

= 25°C

T

C

= 100°C

I

C

16.5

7.9

Pulsed collector current, t

p

limited by T

jmax

I

Cpuls

27

Turn off safe operating area

V

CE

≤ 1200V, T

j

≤ 150°C

-

27

A

Gate-emitter voltage

V

GE

±20

V

Avalanche energy, single pulse

I

C

= 8A, V

CC

= 50V, R

GE

= 25Ω, start at T

j

= 25°C

E

AS

40 mJ

Short circuit withstand time

2

V

GE

= 15V, 100V ≤ V

CC

≤ 1200V, T

j

≤ 150°C

t

SC

10

µs

Power dissipation

T

C

= 25°C

P

tot

125 W

Operating junction and storage temperature

T

j

, T

stg

-55...+150

Soldering temperature (reflow soldering, MSL1)

T

s

245

°C

1

J-STD-020 and JESD-022

2

Allowed number of short circuits: <1000; time between short circuits: >1s.

G

C

E

PG-TO-263-3-2 (D²-PAK)

SGB07N120

Power Semiconductors

2 Rev. 2_2 Apr 07

Thermal Resistance

Parameter Symbol Conditions Max. Value Unit

Characteristic

IGBT thermal resistance,

junction – case

R

thJC

1

Thermal resistance,

junction – ambient

1)

R

thJA

40

K/W

Electrical Characteristic, at T

j

= 25 °C, unless otherwise specified

Value

Parameter Symbol Conditions

min. typ. max.

Unit

Static Characteristic

Collector-emitter breakdown voltage

V

(BR)CES

V

GE

=0V, I

C

=500µA

1200 - -

Collector-emitter saturation voltage

V

CE(sat)

V

GE

= 15V, I

C

=8A

T

j

=25°C

T

j

=150°C

2.5

-

3.1

3.7

3.6

4.3

Gate-emitter threshold voltage

V

GE(th)

I

C

=350µA,V

CE

=V

GE

3 4 5

V

Zero gate voltage collector current

I

CES

V

CE

=1200V,V

GE

=0V

T

j

=25°C

T

j

=150°C

-

100

400

µA

Gate-emitter leakage current

I

GES

V

CE

=0V,V

GE

=20V

- - 100 nA

Transconductance

g

fs

V

CE

=20V, I

C

=8A

6 - S

Dynamic Characteristic

Input capacitance

C

iss

- 720 870

Output capacitance

C

oss

- 60 75

Reverse transfer capacitance

C

rss

V

CE

=25V,

V

GE

=0V,

f=1MHz

- 40 50

pF

Gate charge

Q

Gate

V

CC

=960V, I

C

=8A

V

GE

=15V

- 70 90 nC

Internal emitter inductance

measured 5mm (0.197 in.) from case

L

E

-

7

-

nH

Short circuit collector current

2)

I

C(SC)

V

GE

=15V,t

SC

≤10µs

100V≤V

CC

≤1200V,

T

j

≤ 150°C

- 75 - A

1)

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm

2

(one layer, 70µm thick) copper area for

collector connection. PCB is vertical without blown air.

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

SGB07N120

Power Semiconductors

3 Rev. 2_2 Apr 07

Switching Characteristic, Inductive Load, at T

j

=25 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time

t

d(on)

- 27 35

Rise time

t

r

- 29 38

Turn-off delay time

t

d(off)

- 440 570

Fall time

t

f

- 21 27

ns

Turn-on energy

E

on

- 0.6 0.8

Turn-off energy

E

off

- 0.4 0.55

Total switching energy

E

ts

T

j

=25°C,

V

CC

=800V,I

C

=8A,

V

GE

=15V/0V,

R

G

=47Ω,

L

σ

1)

=180nH,

C

σ

1)

=40pF

Energy losses include

“tail” and diode

reverse recovery.

- 1.0 1.35

mJ

Switching Characteristic, Inductive Load, at T

j

=150 °C

Value

Parameter Symbol Conditions

min. typ. max.

Unit

IGBT Characteristic

Turn-on delay time

t

d(on)

- 30 36

Rise time

t

r

- 26 31

Turn-off delay time

t

d(off)

- 490 590

Fall time

t

f

- 30 36

ns

Turn-on energy

E

on

- 1.0 1.2

Turn-off energy

E

off

- 0.7 0.9

Total switching energy

E

ts

T

j

=150°C

V

CC

=800V,

I

C

=8A,

V

GE

=15V/0V,

R

G

=47Ω,

L

σ

1)

=180nH,

C

σ

1)

=40pF

Energy losses include

“tail” and diode

reverse recovery.

- 1.7 2.1

mJ

1)

Leakage inductance L

σ

and stray capacity C

σ

due to dynamic test circuit in figure E.

SGB07N120ATMA1

SGB07N120ATMA1

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