HMC8401 Data Sheet
Rev. 0 | Page 6 of 17
PIN CONFIGURATION AND FUNCTION DESCRIPTIONS
Figure 2. Pad Configuration
Table 5. Pad Function Descriptions
Pad No. Mnemonic Description
1 RFIN
Radio Frequency (RF) Input. This pad is ac-coupled, but has a large resistor to GND for ESD protection, and
matched to 50 Ω. See Figure 3 for the interface schematic.
2 V
GG
2
Gain Control. This pad is dc-coupled and accomplishes gain control by bringing this voltage lower and
becoming more negative. Attach bypass capacitors to this pad as shown in Figure 43. See Figure 4 for the
interface schematic.
3 V
DD
Power Supply Voltage for the Amplifier. Connect a dc bias to provide drain current (I
DD
). Attach bypass
capacitors to this pad as shown in Figure 43. See Figure 5 for the interface schematic.
4, 6, 7 ACG
Low Frequency Termination. Attach bypass capacitors to this pad as shown in Figure 43.See Figure 6 for
the interface schematic.
5 RFOUT
RF Output. This pad is ac-coupled, but has a large resistor to GND for ESD protection, and is matched to 50 Ω.
See Figure 7 for the interface schematic.
8 V
GG
1
Gate Control for the Amplifier. Adjust V
GG
1 to achieve the recommended bias current. Attach bypass
capacitors to this pad as shown in Figure 43. See Figure 8 for the interface schematic.
Die Bottom GND Die Bottom. The die bottom must be connected to RF/dc ground. See Figure 9 for the interface schematic.
34
2
ADI2014
1
876
5
13850-002
HMC8401
