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86CNQ200SM
P1-P3
P4-P6
Tech
nic
al
Data
Data
She
et
N1133
,
Rev.
A
China
-
Germany
-
Korea
-
Singapore
-
United
States
http://www.smc-diodes.com -
sales@
smc-diodes.com
86CNQ
200
86CNQ200
SCHOTT
KY
RECTIFIE
R
Applications
Features
86CNQ200
86CNQ200SL
86CNQ200SM
PRM2
PRM2-SL
PRM2-SM
Maximum
Ratings:
Characteristics
Symbol
Condition
Max.
Units
Peak
Repet
itive
Reverse
Voltage
Working
Peak
Reverse
Voltage
DC
Blocking
Voltage
V
RRM
V
RW
M
V
R
-
200
V
Average
Rectified
Forward
Current
I
F
(AV)
50%
duty
cycl
e
@T
C
=130°C,
rectangular
wave
form
40(Per
Leg)
A
80(Per
Device)
Peak
One
Cycle
Non-Repetitive
Surge
Current(Per
le
g)
I
FSM
8.3
ms,
half
Sine
pul
se
150
A
175
℃
T
J
operation
Center
tap
module
Very
Low
fo
rward
voltage
d
rop
High
purity,
h
igh
temperature
epoxy
encapsulation
for
enhanced
mec
hanical
strength
and
moisture
resi
stance
High
frequency
operation
Guard
ring
for
enhanced
ruggedness
and
long
term
reliability
Low
profil
e,
h
igh
c
urrent
package
This
is
a
Pb
−
Free
Device
All
SMC
p
arts
are
traceable
to
the
wafer
lo
t
Additional
electrical
and
life
testing
can
be
performed
upon
request
Switching
pow
er
s
upply
Converters
Free-Wheeling
diodes
Reverse
battery
protec
tion
Tech
nic
al
Data
Data
She
et
N1133
,
Rev.
A
China
-
Germany
-
K
orea
- Singapore
- United
States
http://www.smc-diodes.com -
sales@
smc-diodes.com
86CNQ
200
*
Pulse
w
idth
<
300
µs,
duty
cycle
<
2%
Characteristics
Symbol
Condition
Specification
Units
Junction
Temperature
T
J
-
-55
to
+175
C
Storage
Temperature
T
stg
-
-55
to
+175
C
Typical
Thermal
Res
istance
Junction
to
Cas
e
(per
leg)
R
JC
DC
o
peration
0.85
C/W
Typical
Thermal
Res
istance
Junction
to
Cas
e
(per
package)
R
JC
DC
o
peration
0.42
C/W
Typical
Thermal
Res
istance,
case
to
Heat
Sink
R
cs
Mounting
surface,
smooth
and
greased
0.30
C/W
Mounting
Torque
TM
-
40(min)
Kg-cm
58(max)
Approximate
W
eight
wt
-
7.8
g
Case
Style
PRM2
PRM2-SL
P
RM2-SM
Electrical
Characteristics:
Characteristics
Symbol
Condition
Typ.
Max.
Units
Forward
Volt
age
Drop
(Per
le
g)
*
V
F1
@
40A,
Pu
lse,
T
J
=
25
C
@
80A,
Pu
lse,
T
J
=
25
C
0.83
-
0.99
1.14
V
V
F2
@
40A,
Pu
lse,
T
J
=
125
C
@
80A,
Pu
lse,
T
J
=
125
C
0.68
-
0.69
0.78
V
Reverse
Current
(P
er
leg)
*
I
R1
@V
R
=
rate
d
VR
T
J
=
25
C
0.0002
1.1
mA
I
R2
@V
R
=
rate
d
VR
T
J
=
125
C
0.3
24
mA
Junction
Capacitance
(Per
le
g)
C
T
@V
R
=
5V,
T
C
=
25
C
f
SIG
=
1MHz
750
900
pF
Voltage
Rate
of
Change
dv/dt
-
-
10,000
V/
s
Thermal-Mechanical
Spec
ifications:
Tech
nic
al
Data
Data
She
et
N1133
,
Rev.
A
China
-
Germany
-
K
orea
- Singapore
- United
States
http://www.smc-diodes.com -
sales@
smc-diodes.com
86CNQ
200
Ratings
and
Char
acteristics
Curves
Marking
Diagram
W
here
XXXX
is
YYW
W
1st
row
S
S
YYWWL
2nd
row
86
CNQ200/S
L/SM
3rd
row
1
2
3
(pin
)
SS
=
SS
YY
=
Year
WW
=
Week
Cautions
:
Mol
ding
resin
Epoxy
resin
UL:94V-0
P1-P3
P4-P6
86CNQ200SM
Mfr. #:
Buy 86CNQ200SM
Manufacturer:
Description:
DIODE SCHOTTKY 200V 40A PRM2-SM
Lifecycle:
New from this manufacturer.
Delivery:
DHL
FedEx
Ups
TNT
EMS
Payment:
T/T
Paypal
Visa
MoneyGram
Western
Union
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