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VOD213T

P1-P3P4-P6P7-P7
VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Nov-12
1
Document Number: 81956
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Optocoupler, Phototransistor Output, Dual Channel,
SOIC-8 Package
DESCRIPTION
The VOD205T, VOD206T, VOD207T, VOD211T, VOD213T,
VOD217T are optically coupled pairs with a gallium arsenide
infrared LED and a silicon NPN phototransistor. Signal
information, including a DC level, can be transmitted by the
device while maintaining a high degree of electrical isolation
between input and output.
FEATURES
• Two channel coupler
• SOIC-8 surface mountable package
• Standard lead spacing of 0.05"
• Available only on tape and reel option
(conforms to EIA standard 481-2)
• Isolation test voltage, 4000 V
RMS
• Compatible with dual wave, vapor phase and IR reflow
soldering
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
AGENCY APPROVALS
• UL1577, file no. E52744 system code Y
• cUL - file no. E52744, equivalent to CSA bulletin 5A
• DIN EN 60747-5-5 (VDE 0884-5) approved, contact
customer service if this option is required
Notes
(1)
I
F
= 10 mA
(2)
I
F
= 1 mA
i179018-1
A1
C2
A3
C4
8C
7E
6C
5E
V
DE
i179074
ORDERING INFORMATION
VOD2 # # T
PART NUMBER
AGENCY CERTIFIED/PACKAGE CTR (%)
UL, cUL 40 to 80 63 to 125 100 to 200 > 20 > 100
(1)
> 100
(2)
SOIC-8
VOD205T VOD206T VOD207T VOD211T VOD213T VOD217T
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Peak reverse voltage V
R
6V
Peak pulsed current 1 μs, 300 pps I
FM
1A
Continuous forward current per channel I
F
30 mA
Power dissipation P
diss
50 mW
Derate linearly from 25 °C 0.66 mW/°C
OUTPUT
Collector emitter breakdown voltage BV
CEO
70 V
Emitter collector breakdown voltage BV
ECO
7V
Continuous output current I
Cmax.
50 mA
Power dissipation per channel P
diss
125 mW
Derate linearly from 25 °C 1.67 mW/°C
SIOC-8
6.1 mm
VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Nov-12
2
Document Number: 81956
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute
maximum ratings for extended periods of the time can adversely affect reliability.
(1)
Refer to reflow profile for soldering conditions for surface mounted devices.
Fig. 1 - Power Dissipation vs. Ambient Temperature
Note
• Minimum and maximum values were tested requierements. Typical values are characteristics of the device and are the result of engineering
evaluations. Typical values are for information only and are not part of the testing requirements.
COUPLER
Isolation test voltage t = 1 s V
ISO
4000 V
RMS
Total package dissipation ambient
(2 LEDs and 2 detectors, 2 channels)
P
tot
300 mW
Derate linearly from 25 °C 4mW/°C
Storage temperature T
stg
-40 to +150 °C
Operating temperature T
amb
-40 to +100 °C
Soldering time from 260 °C
(1)
T
sld
10 s
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
iild205t_07
200
150
100
50
0
T
A
- Ambient Temperature (°C)
Package Power Dissipation (mW)
25 50 75 100 125
total pkg
per channel
ELECTRICAL CHARACTERISTCS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
INPUT
Forward voltage I
F
= 10 mA V
F
1.2 1.55 V
Reverse current V
R
= 6 V I
R
0.1 100 μA
Capacitance V
R
= 0 V C
O
25 pF
OUTPUT
Collector emitter breakdown voltage I
C
= 100 μA BV
CEO
70 V
Emitter collector breakdown voltage I
E
= 100 μA BV
ECO
7V
Collector emitter leakage current V
CE
= 10 V, I
F
= 0 A I
CEO
550nA
Collector emitter capacitance V
CE
= 0 V C
CE
10 pF
Collector emitter saturation voltage I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.4 V
COUPLER
Capacitance (input to output) C
IO
0.5 pF
VOD205T, VOD206T, VOD207T, VOD211T, VOD213T, VOD217T
www.vishay.com
Vishay Semiconductors
Rev. 1.2, 23-Nov-12
3
Document Number: 81956
For technical questions, contact: optocoupleranswers@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 2 - Switching Test Circuit
CURRENT TRANSFER RATIO
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
I
C
/I
F
V
CE
= 5 V, I
F
= 10 mA
VOD205T CTR
DC
40 80 %
VOD206T CTR
DC
63 125 %
VOD207T CTR
DC
100 200 %
VOD211T CTR
DC
20 %
VOD213T CTR
DC
100 %
V
CE
= 5 V, I
F
= 1 mA
VOD205T CTR
DC
13 30 %
VOD206T CTR
DC
22 45 %
VOD207T CTR
DC
34 70 %
VOD217T CTR
DC
100 120 %
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Turn-on time I
C
= 2 mA, R
L
= 100 Ω, V
CC
= 5 V t
on
5μs
Turn-off time I
C
= 2 mA, R
L
= 100 Ω, V
CC
= 5 V t
off
4μs
Rise time I
C
= 2 mA, R
L
= 100 Ω, V
CC
= 5 V t
r
5μs
Fall time I
C
= 2 mA, R
L
= 100 Ω, V
CC
= 5 V t
f
4μs
COMMON MODE TRANSIENT IMMUNITY
PARAMETER TEST CONDITION SYMBOL MIN. TYP. MAX. UNIT
Common mode transient immunity
at logic high
V
CM
= 1000 V
P-P
, R
L
= 1 kΩ,
I
F
= 0 mA
|C
MH
| 10 000 V/μs
Common mode transient immunity
at logic low
V
CM
= 1000 V
P-P
, R
L
= 1 kΩ,
I
F
= 10 mA
|C
ML
| 10 000 V/μs
iil215at_17
V
CC
= 5 V
Input
V
OUT
R
L
t
fall
10 %
50 %
90 %
t
off
t
on
t
rise
Output
Input
10 %
50 %
90 %
V
0
0
P1-P3P4-P6P7-P7

VOD213T

Mfr. #:
Buy VOD213T
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers Optocoupler SOIC8
Lifecycle:
New from this manufacturer.
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