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IRLZ34NPBF

P1-P3P4-P6P7-P9
HEXFET
®
Power MOSFET
IRLZ34NPbF
PD - 94830
Fifth Generation HEXFETs from International Rectifier
utilize advanced processing techniques to achieve the
lowest possible on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized
device design that HEXFET Power MOSFETs are well
known for, provides the designer with an extremely efficient
device for use in a wide variety of applications.
The TO-220 package is universally preferred for all
commercial-industrial applications at power dissipation
levels to approximately 50 watts. The low thermal resistance
and low package cost of the TO-220 contribute to its wide
acceptance throughout the industry.
l Logic-Level Gate Drive
l Advanced Process Technology
l Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Lead-Free
Description
V
DSS
= 55V
R
DS(on)
= 0.035Ω
I
D
= 30A
S
D
G
T
O
-22
0
AB
11/11/03
Parameter Min. Typ. Max. Units
R
θJC
Junction-to-Case   2.2
R
θCS
Case-to-Sink, Flat, Greased Surface  0.50  °C/W
R
θJA
Junction-to-Ambient   62
Thermal Resistance
Parameter Max. Units
I
D
@ T
C
= 25°C Continuous Drain Current, V
GS
@ 10V 30
I
D
@ T
C
= 100°C Continuous Drain Current, V
GS
@ 10V 21 A
I
DM
Pulsed Drain Current 110
P
D
@T
C
= 25°C Power Dissipation 68 W
Linear Derating Factor 0.45 W/°C
V
GS
Gate-to-Source Voltage ±16 V
E
AS
Single Pulse Avalanche Energy 110 mJ
I
AR
Avalanche Current 16 A
E
AR
Repetitive Avalanche Energy 6.8 mJ
dv/dt Peak Diode Recovery dv/dt 5.0 V/ns
T
J
Operating Junction and -55 to + 175
T
STG
Storage Temperature Range °C
Soldering Temperature, for 10 seconds 300 (1.6mm from case)
Mounting torque, 6-32 or M3 screw. 10 lbfin (1.1Nm)
Absolute Maximum Ratings
IRLZ34NPbF
Parameter Min. Typ. Max. Units Conditions
V
(BR)DSS
Drain-to-Source Breakdown Voltage 55   V V
GS
= 0V, I
D
= 250µA
∆V
(BR)DSS
/∆T
J
Breakdown Voltage Temp. Coefficient  0.065 V/°C Reference to 25°C, I
D
= 1mA
0.035 V
GS
= 10V, I
D
= 16A
Ω V
GS
= 5.0V, I
D
= 16A
0.060 V
GS
= 4.0V, I
D
= 14A
V
GS(th)
Gate Threshold Voltage 1.0  2.0 V V
DS
= V
GS
, I
D
= 250µA
g
fs
Forward Transconductance 11   S V
DS
= 25V, I
D
= 16A
  25 V
DS
= 55V, V
GS
= 0V
  250 V
DS
= 44V, V
GS
= 0V, T
J
= 150°C
Gate-to-Source Forward Leakage   100 V
GS
= 16V
Gate-to-Source Reverse Leakage   -100 V
GS
= -16V
Q
g
Total Gate Charge   25 I
D
= 16A
Q
gs
Gate-to-Source Charge   5.2 nC V
DS
= 44V
Q
gd
Gate-to-Drain ("Miller") Charge   14 V
GS
= 5.0V, See Fig. 6 and 13
t
d(on)
Turn-On Delay Time  8.9  V
DD
= 28V
t
r
Rise Time  100  I
D
= 16A
t
d(off)
Turn-Off Delay Time  21  R
G
= 6.5Ω, V
GS
= 5.0V
t
f
Fall Time  29  R
D
= 1.8Ω, See Fig. 10
Between lead,
6mm (0.25in.)
from package
and center of die contact
C
iss
Input Capacitance  880  V
GS
= 0V
C
oss
Output Capacitance  220  pF V
DS
= 25V
C
rss
Reverse Transfer Capacitance  94   = 1.0MHz, See Fig. 5
Electrical Characteristics @ T
J
= 25°C (unless otherwise specified)
S
D
G
I
GSS
L
S
Internal Source Inductance  7.5 
L
D
Internal Drain Inductance  4.5 
µA
nA
ns
nH
R
DS(on)
Static Drain-to-Source On-Resistance   0.046
I
DSS
Drain-to-Source Leakage Current
Parameter Min. Typ. Max. Units Conditions
I
S
Continuous Source Current MOSFET symbol
(Body Diode) showing the
I
SM
Pulsed Source Current integral reverse
(Body Diode) p-n junction diode.
V
SD
Diode Forward Voltage   1.3 V T
J
= 25°C, I
S
= 16A, V
GS
= 0V
t
rr
Reverse Recovery Time  76 110 ns T
J
= 25°C, I
F
= 16A
Q
rr
Reverse RecoveryCharge  190 290 nC di/dt = 100A/µs
t
on
Forward Turn-On Time Intrinsic turn-on time is negligible (turn-on is dominated by L
S
+L
D
)
Source-Drain Ratings and Characteristics
A
  110
  30
S
D
G
Repetitive rating; pulse width limited by
max. junction temperature. ( See fig. 11 )
I
SD
≤ 16A, di/dt ≤ 270A/µs, V
DD
≤ V
(BR)DSS
,
T
J
≤ 175°C
Notes:
V
DD
= 25V, starting T
J
= 25°C, L = 610µH
R
G
= 25Ω, I
AS
= 16A. (See Figure 12)
Pulse width ≤ 300µs; duty cycle ≤ 2%.
IRLZ34NPbF
Fig 1. Typical Output Characteristics
Fig 3. Typical Transfer Characteristics
Fig 4. Normalized On-Resistance
Vs. Temperature
Fig 2. Typical Output Characteristics
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 175°C
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
J
0.1
1
10
100
1000
0.1 1 10 100
I , Drain-to-Source Current (A)
D
V , Drain-to-Source Voltage (V)
DS
A
20µs PULSE WIDTH
T = 25°C
J
VGS
TOP 15V
12V
10V
8.0V
6.0V
4.0V
3.0V
BOTTOM 2.5V
2.5V
0.1
1
10
100
1000
2345678910
T = 25°C
J
GS
V , Gate-to-Source Voltage (V)
D
I , Drain-to-Source Current (A)
T = 175°C
J
A
V = 25V
20µs PULSE WIDTH
DS
0.0
0.5
1.0
1.5
2.0
2.5
3.0
-60 -40 -20 0 20 40 60 80 100 120 140 160 180
J
T , Junction Temperature (°C)
R , Drain-to-Source On Resistance
DS(on)
(Normalized)
V = 10V
GS
A
I = 27A
D
P1-P3P4-P6P7-P9

IRLZ34NPBF

Mfr. #:
Buy IRLZ34NPBF
Manufacturer:
Infineon / IR
Description:
MOSFET MOSFT 55V 27A 16.7nC 35mOhm LogLvAB
Lifecycle:
New from this manufacturer.
Delivery:
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