MJE15028, MJE15030 (NPN), MJE15029, MJE15031 (PNP)
http://onsemi.com
3
t, TIME (ms)
0.01
0.01 0.05 1.0 2.0 5.0 10 20 50 500 1.0 k0.1 0.50.2
1.0
0.2
0.1
0.05
r(t), TRANSIENT THERMAL
Z
q
JC(t)
= r(t) R
q
JC
R
q
JC
= 1.56°C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
Z
q
JC(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
0.2
SINGLE PULSE
RESISTANCE (NORMALIZED)
Figure 2. Thermal Response
0.5
D = 0.5
0.05
0.3
0.7
0.07
0.03
0.02
0.02
100 200
0.1
0.02
0.01
20
2.0
Figure 3. Forward Bias Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
16
10
0.02
20 120
BONDING WIRE LIMITED
THERMALLY LIMITED
SECOND BREAKDOWN
LIMITED @ T
C
= 25°C
I
C
, COLLECTOR CURRENT (AMP)
dc
100 ms
5.0 10 150
1.0
50
0.1
5ms
MJE15028
MJE15029
MJE15030
MJE15031
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
− V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation then the curves indicate.
The data of Figures 3 and 4 is based on T
J(pk)
= 150_C;
T
C
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided T
J(pk)
< 150_C. T
J(pk)
may be calculated from the data in Figure 2.
At high case temperatures, thermal limitations will reduce
the power that can be handled to values less than the
limitations imposed by second breakdown.
8.0
0
Figure 4. Reverse−Bias Switching
Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
5.0
0
120 140
I
C
, COLLECTOR CURRENT (AMP)
5 V
V
BE(off)
= 9 V
100 110 150
3.0
130
2.0
1.0
V
R
, REVERSE VOLTAGE (VOLTS)
10
150
500
1000
50
Figure 5. Capacitances
200
10030107.05.01.5
C, CAPACITANCE (pF)
3.0
20
50
I
C
/I
B
= 10
T
C
= 25°C
3 V
1.5 V
C
ib
(NPN)
C
ob
(PNP)
100
30
0 V
C
ib
(PNP)
C
ob
(NPN)
