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VS-ETF150Y65N

P1-P3P4-P6P7-P9P10-P12P13-P13
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
Revision: 24-Jun-16
1
Document Number: 95989
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
EMIPAK-2B PressFit Power Module
3-Levels Half-Bridge Inverter Stage, 150 A
FEATURES
• Trench IGBT technology
•FRED Pt
®
clamping diodes
• PressFit pins technology
•Exposed Al
2
O
3
substrate with low thermal resistance
• Short circuit rated
• Square RBSOA
• Integrated thermistor
• Low internal inductances
• Low switching loss
• PressFit pins locking technology. Patent # US.263.820 B2
• UL approved file E78996
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
DESCRIPTION
VS-ETF150Y65N is an integrated solution for a multi level
inverter stage in a single package. The EMIPAK-2B package
is easy to use thanks to the PressFit pins and the exposed
substrate provides improved thermal performance. The
optimized layout also helps to minimize stray parameters,
allowing for better EMI performance.
PRODUCT SUMMARY
Q1 to Q4 IGBT
V
CES
650 V
V
CE(ON)
typical at I
C
= 150 A 1.70 V
I
C
at T
C
= 82 °C 150 A
Speed 8 kHz to 30 kHz
Package EMIPAK-2B
Circuit 3-levels half bridge inverter stage
EMIPAK-2B
(package example)
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Operating junction temperature T
J
175
°C
Storage temperature range T
Stg
-40 to +150
RMS isolation voltage V
ISOL
T
J
= 25 °C, all terminals shorted, f = 50 Hz, t = 1 s 3500 V
Q1 to Q4 IGBT
Collector to emitter voltage V
CES
650
V
Gate to emitter voltage V
GES
20
Pulsed collector current I
CM
450
A
Clamped inductive load current I
LM
180
Continuous collector current I
C
T
C
= 25 °C 201
AT
C
= 60 °C 171
T
SINK
= 60 °C 77
Power dissipation P
D
T
C
= 25 °C 600
W
T
C
= 60 °C 460
PATENT(S): www.vishay.com/patents
This Vishay product is protected by one or more United States and International patents.
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
Revision: 24-Jun-16
2
Document Number: 95989
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
• Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur.
(1)
V
CC
= 325 V, V
GE
= 15 V, L = 500 μH, R
g
= 4.7 , T
J
= 175 °C
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
D5 - D6 CLAMPING DIODE
Repetitive peak reverse voltage V
RRM
650 V
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 750
A
Diode continuous forward current I
F
T
C
= 25 °C 161
T
C
= 60 °C 140
T
SINK
= 60 °C 74
Power dissipation P
D
T
C
= 25 °C 319
W
T
C
= 60 °C 245
D1 - D2 - D3 - D4 AP DIODE
Single pulse forward current I
FSM
10 ms sine or 6 ms rectangular pulse, T
J
= 25 °C 500
A
Diode continuous forward current I
F
T
C
= 25 °C 102
T
C
= 60 °C 92
T
SINK
= 60 °C 57
Power dissipation P
D
T
C
= 25 °C 238
W
T
C
= 60 °C 182
ELECTRICAL SPECIFICATIONS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 to Q4 IGBT
Collector to emitter breakdown voltage BV
CES
V
GE
= 0 V, I
C
= 100 μA 650 - -
VCollector to emitter voltage V
CE(ON)
V
GE
= 15 V, I
C
= 150 A - 1.70 2.17
V
GE
= 15 V, I
C
= 150 A, T
J
= 125 °C - 1.95 -
Gate threshold voltage V
GE(th)
V
CE
= V
GE
, I
C
= 5.0 mA 5.0 6.0 8.4
Temperature coefficient of threshold
voltage
V
GE(th)
/T
J
V
CE
= V
GE
, I
C
= 1.0 mA (25 °C to 125 °C) - -18 - mV/°C
Forward transconductance g
fe
V
CE
= 20 V, I
C
= 150 A - 102 - S
Transfer characteristics V
GE
V
CE
= 20 V, I
C
= 150 A - 10.2 - V
Zero gate voltage collector current I
CES
V
GE
= 0 V, V
CE
= 650 V - 0.1 100
μA
V
GE
= 0 V, V
CE
= 650 V, T
J
= 125 °C - 130 -
Gate to emitter leakage current I
GES
V
GE
= ± 20 V, V
CE
= 0 V - - ± 600 nA
D5 - D6 CLAMPING DIODE
Cathode to anode blocking voltage V
BR
I
R =
500 μA 650 - -
V
Forward voltage drop V
FM
I
F
= 100 A - 1.64 2.0
I
F
= 100 A, T
J
= 125 °C - 1.35 -
Reverse leakage current I
RM
V
R
= 650 V - 0.3 100
μA
V
R
= 650 V, T
J
= 125 °C - 100 -
D1 - D2 - D3 - D4 AP DIODE
Forward voltage drop V
FM
I
F
= 100 A - 2.1 2.9
V
I
F
= 100 A, T
J
= 125 °C - 1.64 -
ABSOLUTE MAXIMUM RATINGS
VS-ETF150Y65N
www.vishay.com
Vishay Semiconductors
Revision: 24-Jun-16
3
Document Number: 95989
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
SWITCHING CHARACTERISTICS (T
J
= 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Q1 to Q4 IGBT
Total gate charge (turn-on) Q
g
I
C
= 150 A
V
CC
= 400 V
V
GE
= 15 V
-310-
nCGate to emitter charge (turn-on) Q
ge
-95-
Gate to collector charge (turn-on) Q
gc
-130-
Input capacitance C
ies
V
GE
= 0 V
V
CC
= 30 V
f = 1 MHz
- 9900 -
pFOutput capacitance C
oes
-460-
Reverse transfer capacitance C
res
-250-
Q1 and Q4 IGBT with D5 and D6 CLAMP DIODE
Turn-on switching loss E
ON
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7 
L = 500 μH
(1)
-0.69-
mJTurn-off switching loss E
OFF
-3.4-
Total switching loss E
TOT
-4.1-
Turn-on delay time t
d(on)
-161-
ns
Rise time t
r
-108-
Turn-off delay time t
d(off)
-139-
Fall time t
f
-91-
Turn-on switching loss E
ON
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7 
L = 500 μH
T
J
= 125 °C
(1)
-0.9-
mJTurn-off switching loss E
OFF
-4.2-
Total switching loss E
TOT
-5.1-
Turn-on delay time t
d(on)
-160-
ns
Rise time t
r
-109-
Turn-off delay time t
d(off)
-150-
Fall time t
f
-97-
Q2 and Q3 IGBT with D2 and D3 AP DIODE
Turn-on switching loss E
ON
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7 
L = 500 μH
(1)
-0.8-
mJTurn-off switching loss E
OFF
-4.0-
Total switching loss E
TOT
-4.8-
Turn-on delay time t
d(on)
-144-
ns
Rise time t
r
-117-
Turn-off delay time t
d(off)
-144-
Fall time t
f
-98-
Turn-on switching loss E
ON
I
C
= 150 A
V
CC
= 325 V
V
GE
= 15 V
R
g
= 4.7 
L = 500 μH
T
J
= 125 °C
(1)
-0.98-
mJTurn-off switching loss E
OFF
-4.7-
Total switching loss E
TOT
-5.7-
Turn-on delay time t
d(on)
-166-
ns
Rise time t
r
-120-
Turn-off delay time t
d(off)
-153-
Fall time t
f
-106-
Reverse bias safe operating area RBSOA
T
J
= 175 °C, I
C
= 180 A,
V
CC
= 325 V, V
P
= 650 V,
R
g
= 4.7 , V
GE
= 15 V to 0 V
Fullsquare
Short circuit safe operating area SCSOA
R
g
= 5.0 , V
CC
= 400 V,
V
P
= 600 V, V
GE
= 15 V to 0,
T
J
= 150 °C
--5.5μs
P1-P3P4-P6P7-P9P10-P12P13-P13

VS-ETF150Y65N

Mfr. #:
Buy VS-ETF150Y65N
Manufacturer:
Vishay Semiconductors
Description:
IGBT Modules 650V Vces 150A Ic 3 Levels Half-Bridge
Lifecycle:
New from this manufacturer.
Delivery:
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