© Semiconductor Components Industries, LLC, 2007
September, 2007 - Rev. 8
1 Publication Order Number:
MUN5211T1/D
MUN5211T1 Series
Preferred Devices
Bias Resistor Transistor
NPN Silicon Surface Mount Transistor
with Monolithic Bias Resistor Network
This new series of digital transistors is designed to replace a single
device and its external resistor bias network. The BRT (Bias Resistor
Transistor) contains a single transistor with a monolithic bias network
consisting of two resistors; a series base resistor and a base-emitter
resistor. The BRT eliminates these individual components by
integrating them into a single device. The use of a BRT can reduce
both system cost and board space. The device is housed in the
SC-70/SOT-323 package which is designed for low power
surface mount applications.
Features
Simplifies Circuit Design
Reduces Board Space
Reduces Component Count
The SC-70/SOT-323 package can be soldered using wave or reflow.
The modified gull-winged leads absorb thermal stress during
soldering eliminating the possibility of damage to the die.
Available in 8 mm embossed tape and reel. Use the Device Number
to order the 7 inch/3000 unit reel.
Pb-Free Packages are Available
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Collector-Base Voltage V
CBO
50 Vdc
Collector-Emitter Voltage V
CEO
50 Vdc
Collector Current I
C
100 mAdc
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
202 (Note 1)
310 (Note 2)
1.6 (Note 1)
2.5 (Note 2)
mW
mW/°C
Thermal Resistance, Junction-to-Ambient
R
q
JA
618 (Note 1)
403 (Note 2)
°C/W
Thermal Resistance, Junction-to-Lead
R
q
JL
280 (Note 1)
332 (Note 2)
°C/W
Junction and Storage Temperature
Range
T
J
, T
stg
-55 to +150 °C
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. FR-4 @ Minimum Pad.
2. FR-4 @ 1.0 x 1.0 inch Pad.
Preferred devices are recommended choices for future use
and best overall value.
NPN SILICON
BIAS RESISTOR
TRANSISTORS
PIN 3
COLLECTOR
(OUTPUT)
PIN 2
EMITTER
(GROUND)
PIN 1
BASE
(INPUT)
R
1
R
2
DEVICE MARKING INFORMATION
See specific marking information in the device marking table
on page 2 of this data sheet.
http://onsemi.com
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
SC-70/SOT-323
CASE 419
STYLE 3
3
2
1
MARKING DIAGRAM
8x = Device Code
M = Date Code*
G = Pb-Free Package
(Note: Microdot may be in either location)
*Date Code orientation may vary depending
upon manufacturing location.
8x
M G
G
MUN5211T1 Series
http://onsemi.com
2
DEVICE MARKING AND RESISTOR VALUES
Device Package Marking R1 (K) R2 (K) Shipping
MUN5211T1 SC-70/SOT-323 8A 10 10 3000 / Tape & Reel
MUN5211T1G SC-70/SOT-323
(Pb-Free)
8A 10 10 3000 / Tape & Reel
MUN5212T1 SC-70/SOT-323 8B 22 22 3000 / Tape & Reel
MUN5212T1G SC-70/SOT-323
(Pb-Free)
8B 22 22 3000 / Tape & Reel
MUN5213T1 SC-70/SOT-323 8C 47 47 3000 / Tape & Reel
MUN5213T1G SC-70/SOT-323
(Pb-Free)
8C 47 47 3000 / Tape & Reel
MUN5214T1 SC-70/SOT-323 8D 10 47 3000 / Tape & Reel
MUN5214T1G SC-70/SOT-323
(Pb-Free)
8D 10 47 3000 / Tape & Reel
MUN5215T1 SC-70/SOT-323 8E 10 3000 / Tape & Reel
MUN5215T1G SC-70/SOT-323
(Pb-Free)
8E 10 3000 / Tape & Reel
MUN5216T1 (Note 3) SC-70/SOT-323 8F 4.7 3000 / Tape & Reel
MUN5216T1G (Note 3) SC-70/SOT-323
(Pb-Free)
8F 4.7 3000 / Tape & Reel
MUN5230T1 SC-70/SOT-323 8G 1.0 1.0 3000 / Tape & Reel
MUN5230T1G SC-70/SOT-323
(Pb-Free)
8G 1.0 1.0 3000 / Tape & Reel
MUN5231T1 (Note 3) SC-70/SOT-323 8H 2.2 2.2 3000 / Tape & Reel
MUN5231T1G (Note 3) SC-70/SOT-323
(Pb-Free)
8H 2.2 2.2 3000 / Tape & Reel
MUN5232T1 SC-70/SOT-323 8J 4.7 4.7 3000 / Tape & Reel
MUN5232T1G SC-70/SOT-323
(Pb-Free)
8J 4.7 4.7 3000 / Tape & Reel
MUN5233T1 SC-70/SOT-323 8K 4.7 47 3000 / Tape & Reel
MUN5233T1G SC-70/SOT-323
(Pb-Free)
8K 4.7 47 3000 / Tape & Reel
MUN5234T1 (Note 3) SC-70/SOT-323 8L 22 47 3000 / Tape & Reel
MUN5234T1G (Note 3) SC-70/SOT-323
(Pb-Free)
8L 22 47 3000 / Tape & Reel
MUN5235T1 SC-70/SOT-323 8M 2.2 47 3000 / Tape & Reel
MUN5235T1G SC-70/SOT-323
(Pb-Free)
8M 2.2 47 3000 / Tape & Reel
MUN5236T1 (Note 3) SC-70/SOT-323 8N 100 100 3000 / Tape & Reel
MUN5236T1G (Note 3) SC-70/SOT-323
(Pb-Free)
8N 100 100 3000 / Tape & Reel
MUN5237T1 (Note 3) SC-70/SOT-323 8P 47 22 3000 / Tape & Reel
MUN5237T1G (Note 3) SC-70/SOT-323
(Pb-Free)
8P 47 22 3000 / Tape & Reel
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
3. New devices. Updated curves to follow in subsequent data sheets.
MUN5211T1 Series
http://onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Collector-Base Cutoff Current
(V
CB
= 50 V, I
E
= 0)
I
CBO
- - 100 nAdc
Collector-Emitter Cutoff Current
(V
CE
= 50 V, I
B
= 0)
I
CEO
- - 500 nAdc
Emitter-Base Cutoff Current MUN5211T1, G
(V
EB
= 6.0 V, I
C
= 0) MUN5212T1, G
MUN5213T1, G
MUN5214T1, G
MUN5215T1, G
MUN5216T1, G
MUN5230T1, G
MUN5231T1, G
MUN5232T1, G
MUN5233T1, G
MUN5234T1, G
MUN5235T1, G
MUN5236T1, G
MUN5237T1, G
I
EBO
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.5
0.2
0.1
0.2
0.9
1.9
4.3
2.3
1.5
0.18
0.13
0.2
0.05
0.13
mAdc
Collector-Base Breakdown Voltage
(I
C
= 10 mA, I
E
= 0)
V
(BR)CBO
50 - - Vdc
Collector-Emitter Breakdown Voltage (Note 4)
(I
C
= 2.0 mA, I
B
= 0)
V
(BR)CEO
50 - - Vdc
ON CHARACTERISTICS (Note 4)
DC Current Gain MUN5211T1, G
(V
CE
= 10 V, I
C
= 5.0 mA) MUN5212T1, G
MUN5213T1, G
MUN5214T1, G
MUN5215T1, G
MUN5216T1, G
MUN5230T1, G
MUN5231T1, G
MUN5232T1, G
MUN5233T1, G
MUN5234T1, G
MUN5235T1, G
MUN5236T1, G
MUN5237T1, G
h
FE
35
60
80
80
160
160
3.0
8.0
15
80
80
80
80
80
60
100
140
140
350
350
5.0
15
30
200
150
140
150
140
-
-
-
-
-
-
-
-
-
-
-
-
-
-
Collector-Emitter Saturation Voltage
(I
C
= 10 mA, I
B
= 0.3 mA) MUN5211T1, G
MUN5212T1, G
MUN5213T1, G
MUN5214T1, G
MUN5236T1, G
(I
C
= 10 mA, I
B
= 5 mA) MUN5230T1, G
MUN5231T1, G
MUN5237T1, G
(I
C
= 10 mA, I
B
= 1 mA) MUN5215T1, G
MUN5216T1, G
MUN5232T1, G
MUN5233T1, G
MUN5234T1, G
MUN5235T1, G
V
CE(sat)
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
0.25
Vdc
4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%

MUN5216T1

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
TRANS PREBIAS NPN 202MW SC70-3
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union