CNY64S(B)(TA)-V Datasheet CNY64S(B)(TA)-V, CNY64S(A)(TA)-V | P1-P3

4 PIN DIP VERY HIGH ISOLATION VOLTAGE

PHOTOCOUPLER

Everlight Electronics Co., Ltd. 1 http:\\www.everlight.com

Document No：DPC-0000060

Rev. 1 June 18, 2010

CNY64S series

Features

• High Voltage

BV

CEO

=80V (min.)

• Operating temperature up to +85°C

• High isolation voltage between input and output

V

IOTM

= 8200 V perk for CNY64

V

IOTM

= 10000 V perk for CNY64-V

• Rated recurring peak voltage (repetitive)

V

IORM

= 2200 V

• Creepage current resistance according to VDE 0303/IEC 60112

comparative tracking index: CTI ≥ 200

• Thickness through insulation ≧3mm

• Pb free and RoHS compliant.

• CUL approved (No. E214129)

• VDE approved (No. 40027351)

• FIMKO approved (No. 25464)

Description

The CNY64S series contains an infrared emitting diode

optically coupled to a phototransistor.

These device is packaged in an 4-pin SMD package and

providing a distance between input and output for highest

safety requirement of >3mm.

Applications

z Switch mode power supply

z Line receiver

z Computer peripheral interface

z Microprocessor system interface

z Circuits for safe protective separation against electrical shock according to safety class II (reinforced

isolation):

- for appl. class I - IV at mains voltage ≤ 300 V

- for appl. class I - IV at mains voltage ≤ 600 V

- for appl. class I - III at mains voltage ≤ 1000 V

according to DIN EN 60747-5-5

1. Anode

2. Cathode

3. Emitter

4. Collector

4 PIN DIP VERY HIGH ISOLATION VOLTAGE

PHOTOCOUPLER

Everlight Electronics Co., Ltd. 2 http:\\www.everlight.com

Document No：DPC-0000060

Rev. 1 June 18, 2010

CNY64S series

Absolute Maximum Ratings (T

a

=25°C)

Parameter Symbol Rating Unit

Forward current

I

F

75

mA

Peak forward current (<10µs)

I

FM

1.5

A

Reverse voltage

V

R

5

V

Input

Power dissipation

P

D

120

mW

Collector current

I

C

50 mA

Collector power dissipation

P

C

150 mW

Collector-Emitter voltage

V

CEO

80 V

Output

Emitter-Collector voltage

V

ECO

7

V

Total power dissipation

P

tot

250 mW

Isolation voltage

*1

V

iso

8200 Vrms

Operating temperature

T

opr

-55~+85 °C

Storage temperature

T

stg

-55~+100 °C

Soldering temperature

*2

T

sol

260 °C

Notes

*1

AC for 1 minute, R.H.= 40 ~ 60% R.H. In this test, pins 1 & 2 are shorted together, and pins 3 & 4 are

shorted together.

*2

2mm from case, <10 seconds.

4 PIN DIP VERY HIGH ISOLATION VOLTAGE

PHOTOCOUPLER

Everlight Electronics Co., Ltd. 3 http:\\www.everlight.com

Document No：DPC-0000060

Rev. 1 June 18, 2010

CNY64S series

Electrical Characteristics (T

a

=25°C unless specified otherwise)

Input

Parameter Symbol Min. Typ.* Max. Unit Condition

Forward voltage

V

F

- 1.6 2.0 V

I

F

= 50mA

Reverse current

I

R

- - 10 µA

V

R

= 5V

Input capacitance

C

in

- - 100 pF V = 0, f = 1MHz

Output

Parameter Symbol Min. Typ.* Max. Unit Condition

Collector-Emitter dark current

I

CEO

-

- 200

nA

V

CE

= 20V, I

F

=0mA

Collector-Emitter

breakdown voltage

BV

CEO

80

- - V

I

C

= 1mA

Emitter-Collector

breakdown voltage

BV

ECO

7 - - V

I

E

= 0.1mA

Collector-Emitter capacitance C

CE

- - 50 pF

V

CE

= 0V, f = 1MHz

Transfer Characteristics

Parameter Symbol Min. Typ.* Max. Unit Condition

CNY64

50 -

300

CNY64A

63

-

125

Current Transfer

Ratio

CNY64B

CTR

100

-

200

%

I

F

= 5mA ,V

CE

= 5V

Collector-emitter

saturation voltage

V

CE(sat)

-

0.3 V

I

F

= 10mA , I

C

= 1mA

Coupling capacitance

C

IO

- 0.3 - pF f=1MHz

Isolation resistance

R

IO

10

11

- -

Ω

V

IO

= 500Vdc

Turn-on time

T

on

-

6

18

Turn-off time

T

off

-

7

18

V

CC

= 5V,

I

C

= 5mA, R

L

= 100Ω

Rise time tr -

3

18

Fall time tf -

5

18

µs

V

CC

= 5V,

I

C

= 5mA, R

L

= 100Ω

* Typical values at T

a

= 25°C

CNY64S(B)(TA)-V

CNY64S(B)(TA)-V

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