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SIR812DP-T1-GE3

P1-P3P4-P6P7-P9P10-P12P13-P13
SiR812DP
www.vishay.com
Vishay Siliconix
S15-1543-Rev. B, 29-Jun-15
4
Document Number: 63551
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Source-Drain Diode Forward Voltage
Threshold Voltage
On-Resistance vs. Gate-to-Source Voltage
Single Pulse Power, Junction-to-Ambient
Safe Operating Area, Junction-to-Ambient
0.001
0.01
0.1
1
10
100
0.0 0.2 0.4 0.6 0.8 1.0 1.2
I
S
- Source Current (A)
V
SD
- Source-to-Drain Voltage (V)
T
J
= 150 °C
T
J
= 25 °C
- 0.8
- 0.6
- 0.4
- 0.2
0.2
0
0.4
- 50 - 25 0 25 50 75 100 125 150
V
GS(th)
(V)
T
J
- Temperature (°C)
I
D
= 250 μA
I
D
= 5 mA
0.000
0.001
0.002
0.003
0.004
0.005
0 2 4 6 8 10
R
DS(on)
- On-Resistance (Ω)
V
GS
- Gate-to-Source Voltage (V)
T
J
= 125 °C
T
J
= 25 °C
I
D
= 20 A
0
40
80
120
160
200
0.001 0.01 0.1 1 10
Power (W)
Time (s)
0.01
0.1
1
10
100
1000
0.01 0.1 1 10 100
I
D
- Drain Current (A)
V
DS
- Drain-to-Source Voltage (V)
* V
GS
> minimum V
GS
at which R
DS(on)
is specied
100 ms
Limited by R
DS
on
*
1 ms
I
DM
Limited
T
A
= 25 °C
Single Pulse
BVDSS Limited
10 ms
10 s
1 s
DC
I
D
Limited
100 μs
SiR812DP
www.vishay.com
Vishay Siliconix
S15-1543-Rev. B, 29-Jun-15
5
Document Number: 63551
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Current Derating
a
Power, Junction-to-Case Power, Junction-to-Ambient
Note
a. The power dissipation P
D
is based on T
J
(max.) = 150 °C, using junction-to-case thermal resistance, and is more useful in settling the upper
dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the
package limit.
0
44
88
132
176
220
0 25 50 75 100 125 150
I
D
- Drain Current (A)
T
C
- Case Temperature (°C)
Limited by Package
0
25
50
75
100
125
0 25 50 75 100 125 150
Power (W)
T
C
- Case Temperature (°C)
0.0
0.6
1.2
1.8
2.4
3.0
0 25 50 75 100 125 150
Power (W)
T
A
- Ambient Temperature (°C)
SiR812DP
www.vishay.com
Vishay Siliconix
S15-1543-Rev. B, 29-Jun-15
6
Document Number: 63551
For technical questions, contact: pmostechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Normalized Thermal Transient Impedance, Junction-to-Case
Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon
Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and
reliability data, see www.vishay.com/ppg?63551
.
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10 100 1000
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
t
1
t
2
Notes:
P
DM
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 54 °C/W
3. T
JM
-T
A
=P
DM
Z
thJA
(t)
t
1
t
2
4. Surface Mounted
0.01
0.1
1
0.0001 0.001 0.01 0.1 1 10
Normalized Effective Transient
Thermal Impedance
Square Wave Pulse Duration (s)
Duty Cycle = 0.5
0.2
0.1
0.05
0.02
Single Pulse
P1-P3P4-P6P7-P9P10-P12P13-P13

SIR812DP-T1-GE3

Mfr. #:
Buy SIR812DP-T1-GE3
Manufacturer:
Vishay / Siliconix
Description:
MOSFET 30V 60A 104W 1.45mohm @ 10V
Lifecycle:
New from this manufacturer.
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