BY459-1500,127

Philips Semiconductors Product specification
Damper diode BY459-1500, BY459-1500S
fast, high-voltage
FEATURES SYMBOL QUICK REFERENCE DATA
• Low forward volt drop V
R
= 1500 V
• Fast switching
• Soft recovery characteristic V
F
1.2 V / 1.25 V
• High thermal cycling performance
• Low thermal resistance I
F(peak)
= 12 A (f = 48 kHz)
I
F(peak)
= 10 A (f = 82 kHz)
I
FSM
100 A
t
rr
350 ns / 220 ns
GENERAL DESCRIPTION PINNING SOD59 (TO220AC)
Glass-passivated double diffused PIN DESCRIPTION
rectifier diode featuring fast forward
recovery and low forward recovery 1 cathode
voltage. The device is intended for
use in HDTV receivers and 2 anode
multi-sync monitor horizontal
deflection circuits. tab cathode
The BY459 series is supplied in the
conventional leaded SOD59
(TO220AC) package.
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
V
RSM
Peak non-repetitive reverse - 1500 V
voltage
V
RRM
Peak repetitive reverse - 1500 V
voltage
V
RWM
Crest working reverse voltage - 1300 V
BY459 -1500 -1500S
I
F(peak)
Peak working forward current f = 48 kHz; - 12 - A
f = 82 kHz; - - 10 A
I
FRM
Peak repetitive forward t = 100 µs - 100 A
current
I
F(RMS)
RMS forward current - 30 A
I
FSM
Peak non-repetitive forward t = 10 ms - 100 A
current t = 8.3 ms - 110 A
sinusoidal; T
j
= 150 ˚C prior to
surge; with reapplied V
RWM(max)
T
stg
Storage temperature -40 150 ˚C
T
j
Operating junction - 150 ˚C
temperature
k a
12
1
tab
2
September 1998 1 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY459-1500, BY459-1500S
fast, high-voltage
THERMAL RESISTANCES
SYMBOL PARAMETER CONDITIONS MIN. TYP. MAX. UNIT
R
th j-mb
Thermal resistance junction to - - 1.5 K/W
mounting base
R
th j-a
Thermal resistance junction to in free air - 60 - K/W
ambient
STATIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BY459 1500 1500S 1500 1500S
V
F
Forward voltage I
F
= 6.5 A 0.95 1.05 1.30 1.35 V
I
F
= 6.5 A; T
j
= 125 ˚C 0.85 0.95 1.20 1.25 V
I
R
Reverse current V
R
= 1300 V - 250 - 250 µA
V
R
= 1300 V; T
j
= 125 ˚C - 1 - 1 mA
DYNAMIC CHARACTERISTICS
T
j
= 25 ˚C unless otherwise stated
SYMBOL PARAMETER CONDITIONS TYP. MAX. UNIT
BY459 1500 1500S 1500 1500S
t
rr
Reverse recovery time I
F
= 1 A, V
R
30 V; 0.25 0.17 0.35 0.22 µs
Q
s
Reverse recovery charge I
F
= 2 A, -dI
F
/dt = 20 A/µs 2.0 0.70 3.0 0.95 µC
V
fr
Peak forward recovery voltage I
F
= 6.5A, dI
F
/dt = 50A/µs 8.0 11.0 14.0 19.0 V
t
fr
Forward recovery time I
F
= 6.5A, dI
F
/dt = 50A/µs 170 200 250 300 ns
September 1998 2 Rev 1.100
Philips Semiconductors Product specification
Damper diode BY459-1500, BY459-1500S
fast, high-voltage
Fig.1. Definition of Vfr and tfr
Fig.2. Definition of t
rr
and Q
s
Fig.3. Basic horizontal deflection circuit.
Fig.4. Maximum allowable pulse width t
p
versus line
frequency; Basic horizontal deflection circuit.
Fig.5. BY459-1500 Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
Fig.6. BY459-1500S Typical and maximum forward
characteristic I
F
= f(V
F
); parameter T
j
time
time
V
F
V
fr
V
F
I
F
10%
5V / 2V
tfr
10 100
1
10
100
BY459X-1500
line frequency / kHz
Maximum pulse width / us
V
time
VRRM
width tp
period T
pulse
100%
time
dI
dt
F
I
R
I
F
trr
25%
Qs
0 1 2
BY459
VF / V
IF / A
30
20
10
0
0.5
1.5
maxtyp
Tj = 125 C
Tj = 25 C
Line output transformer
VCC
D1
LY
Cs
Cf
deflection transistor
0 0.5 1 1.5 2
0
10
20
30
VF / V
IF / A
Tj = 125 C
Tj = 25 C
max
typ
BY459S
September 1998 3 Rev 1.100

BY459-1500,127

Mfr. #:
Manufacturer:
NXP Semiconductors
Description:
DIODE GEN PURP 1.5KV 12A TO220AC
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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