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EMT1DXV6T1G

P1-P3P4-P4
© Semiconductor Components Industries, LLC, 2014
November, 2014 − Rev. 2
1 Publication Order Number:
EMT1DXV6T1/D
EMT1DXV6
Dual General Purpose
Transistor
PNP Dual
This transistor is designed for general purpose amplifier
applications. It is housed in the SOT−563 which is designed for low
power surface mount applications.
Features
• Lead−Free Solder Plating
• Low V
CE(SAT)
, t0.5 V
• NSV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
−60 V
Collector−Base Voltage V
CBO
−50 V
Emitter−Base Voltage V
EBO
−6.0 V
Collector Current − Continuous I
C
−100 mAdc
THERMAL CHARACTERISTICS
Characteristic
(One Junction Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
357
(Note 1)
2.9
(Note 1)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
350
(Note 1)
°C/W
Characteristic
(Both Junctions Heated)
Symbol Max Unit
Total Device Dissipation
T
A
= 25°C
Derate above 25°C
P
D
500
(Note 1)
4.0
(Note 1)
mW
mW/°C
Thermal Resistance,
Junction-to-Ambient
R
q
JA
250
(Note 1)
°C/W
Junction and Storage
Temperature Range
T
J
, T
stg
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
1. FR−4 @ Minimum Pad.
SOT−563
CASE 463A
STYLE 1
Q
1
(1)(2)
(3)
(4) (5) (6)
Q
2
http://onsemi.com
MARKING DIAGRAM
3T M G
G
3T = Specific Device Code
M = Month Code
G = Pb−Free Package
1
(Note: Microdot may be in either location)
1
6
See detailed ordering and shipping information in the package
dimensions section on page 2 of this data sheet.
ORDERING INFORMATION
EMT1DXV6
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C)
Characteristic
Symbol Min Typ Max Unit
Collector−Base Breakdown Voltage
(I
C
= −50 mAdc, I
E
= 0)
V
(BR)CBO
−60 − − Vdc
Collector−Emitter Breakdown Voltage
(I
C
= −1.0 mAdc, I
B
= 0)
V
(BR)CEO
−50 − − Vdc
Emitter−Base Breakdown Voltage
(I
E
= −50 mAdc, I
E
= 0)
V
(BR)EBO
−6.0 − − Vdc
Collector−Base Cutoff Current
(V
CB
= −30 Vdc, I
E
= 0)
I
CBO
− − −0.5 nA
Emitter−Base Cutoff Current
(V
EB
= −5.0 Vdc, I
B
= 0)
I
EBO
− − −0.5
mA
Collector−Emitter Saturation Voltage (Note 2)
(I
C
= −50 mAdc, I
B
= −5.0 mAdc)
V
CE(sat)
− − −0.5
Vdc
DC Current Gain (Note 2)
(V
CE
= −6.0 Vdc, I
C
= −1.0 mAdc)
h
FE
120 − 560
−
Transition Frequency
(V
CE
= −12 Vdc, I
C
= −2.0 mAdc, f = 30 MHz)
f
T
− 140 −
MHz
Output Capacitance
(V
CB
= −12 Vdc, I
E
= 0 Adc, f = 1 MHz)
C
OB
− 3.5 − pF
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
2. Pulse Test: Pulse Width ≤ 300 ms, D.C. ≤ 2%.
ORDERING INFORMATION
Device Package Shipping
†
EMT1DXV6T1G SOT−563
(Pb−Free)
4000 / Tape & Reel
NSVEMT1DXV6T1G* SOT−563
(Pb−Free)
4000 / Tape & Reel
EMT1DXV6T5G SOT−563
(Pb−Free)
8000 / Tape & Reel
NSVEMT1DXV6T5G* SOT−563
(Pb−Free)
8000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
*NSV Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC−Q101 Qualified and PPAP
Capable.
EMT1DXV6
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. I
C
− V
CE
V
CE
, COLLECTOR VOLTAGE (V)
Figure 2. DC Current Gain
I
C
, COLLECTOR CURRENT (mA)
Figure 3. Collector Saturation Region
I
B
, BASE CURRENT (mA)
Figure 4. On Voltage
I
C
, COLLECTOR CURRENT (mA)
I
C
, COLLECTOR CURRENT (mA)
0
120
90
60
30
0
36 9 15
DC CURRENT GAIN
1000
0.1
100
10
1 10 100
T
A
= 25°C
T
A
= - 25°C
T
A
= 75°C
V
CE
= 10 V
V
CE
, COLLECTOR‐EMITTER VOLTAGE (V)
2
0.01
1.5
1
0.5
0
0.1 1 10 100
T
A
= 25°C
COLLECTOR VOLTAGE (mV)
900
0.2
800
700
600
500
400
300
200
100
0.5 1 5 10 20 40 60 80 100 150 200
T
A
= 25°C
V
CE
= 5 V
12
0
T
A
= 25°C
300 mA
I
B
= 50 mA
100
150
200
250
Figure 5. Capacitance
V
CB
(V)
Figure 6. Capacitance
V
EB
(V)
13
0
12
11
10
9
6
123 4
14
0
C
ib
,
INPUT
CAPACITANCE
(
p
F)
12
10
8
6
4
0
10 20 30 40
C
ob
, CAPACITANCE (pF)
8
7
2
P1-P3P4-P4

EMT1DXV6T1G

Mfr. #:
Buy EMT1DXV6T1G
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 100mA 60V Dual PNP
Lifecycle:
New from this manufacturer.
Delivery:
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