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REV:C
Circuit diagram
CPDT6-5V4-HF
QW-JP021
Comchip Technology CO., LTD.
Features
-Common anode ESD protection.
-IEC61000-4-2 Level 4 ESD protection.
-Low operating voltage: < 5V.
- .Fast turn-on and low clamping voltage
Mechanical data
Symbol
Typ
Parameter
Min
Max
Unit
Junction capacitance
Conditions
Diode breakdown voltage
VBD V
IR = 1mA
Leakage current
IL
uA
20
CT
pF
VR =0V,f =1MHz
5.1
0.1
7.0
15
2.0
VR = 5V
Clamping voltage
ESD capability
kV
Peak pulse power
PPP W
75
Storage temperature
Operation temperature
125
O
C
TSTG
Tj
O
C
150
-55
VC
V
IPP = 5A,TP=8/20us
15
TP=8/20us
ESD
IEC 61000-4-2(air)
IEC 61000-4-2(contact)
16
8
1 2 3
6 4
5
RoHS Device
Halogen Free
Electrical Characteristics (at TA=25°C unless otherwise noted)
SMD ESD Protection Diode
-Case: SOT-23-6 Standard package,
molded plastic.
-Marking code:E5V4
-Mounting position: Any.
-Weight: 0.015 gram(approx.).
-Terminals: Tin plated, solderable per
MIL-STD-750, method 2026.
Dimensions in inches and (millimeter)
SOT-23-6
0.119(3.02)
0.111(2.82)
0.067(1.70)
0.059(1.50)
0.079(2.00)
0.071(1.80)
0.045(1.15)
0.041(1.05)
0.020(0.50)
0.012(0.30)
0.004(0.10)
0.024(0.60)
0.116(2.95)
0.104(2.65)
0.008(0.20)
0.004(0.10)
0.012(0.30)
0.000(0.00)
Company reserves the right to improve product design , functions and reliability without notice.
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