2 - 2
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Symbol Test Conditions Characteristic Values
(T
J
= 25°C, unless otherwise specified)
min. typ. max.
g
fs
V
DS
= 10 V; I
D
= 8.4 A, pulse test 9.3 S
C
iss
2800 pF
C
oss
V
GS
= 0 V, V
DS
= 25 V, f = 1 MHz 300 pF
C
rss
150 pF
t
d(on)
18 ns
t
r
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 14 A 47 ns
t
d(off)
R
G
= 6.2 Ω, (External) 92 ns
t
f
44 ns
Q
g(on)
110 150 nC
Q
gs
V
GS
= 10 V, V
DS
= 0.5 • V
DSS
, I
D
= 14 A 15 20 nC
Q
gd
50 80 nC
R
thJC
0.65 K/W
R
thCK
0.24 K/W
Source-Drain Diode Characteristic Values
(T
J
= 25°C, unless otherwise specified)
Symbol Test Conditions min. typ. max.
I
S
V
GS
= 0 V 14 A
I
SM
Repetitive; pulse width limited by T
JM
56 A
V
SD
I
F
= I
S
, V
GS
= 0 V, 1.4 V
Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 %
t
rr
I
F
= I
S
, -di/dt = 100 A/µs, V
R
= 100 V 500 ns
IRFP 450
Dim. Millimeter Inches
Min. Max. Min. Max.
A 4.7 5.3 .185 .209
A
1
2.2 2.54 .087 .102
A
2
2.2 2.6 .059 .098
b 1.0 1.4 .040 .055
b
1
1.65 2.13 .065 .084
b
2
2.87 3.12 .113 .123
C .4 .8 .016 .031
D 20.80 21.46 .819 .845
E 15.75 16.26 .610 .640
e 5.20 5.72 0.205 0.225
L 19.81 20.32 .780 .800
L1 4.50 .177
∅P 3.55 3.65 .140 .144
Q 5.89 6.40 0.232 0.252
R 4.32 5.49 .170 .216
S 6.15 BSC 242 BSC
TO-247 AD Outline
Terminals: 1 - Gate 2 - Drain
3 - Source Tab - Drain
1 2 3
IXYS MOSFETS and IGBTs are covered by one or more of the following U.S. patents:
4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715
4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
