MCT210300 Datasheet MCT210, MCT23S, MCT2713SD | P1-P3

10/10/03

WHITE PACKAGE (-M SUFFIX)

Page 1 of 14

BLACK PACKAGE (NO -M SUFFIX)

6

1

6

1

6

1

6

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6

1

MCT2 MCT2E MCT210 MCT271

MCT2200 MCT2201 MCT2202

PHOTOTRANSISTOR OPTOCOUPLERS

DESCRIPTION

The MCT2XXX series optoisolators consist of a gallium arsenide infrared emitting diode driving a silicon phototransistor in a 6-pin

dual in-line package.

FEATURES

• UL recognized (File # E90700)

• VDE recognized (File # 94766)

– Add option V for white package (e.g., MCT2V-M)

– Add option 300 for black package (e.g., MCT2.300)

• MCT2 and MCT2E are also available in white package by specifying -M sufﬁx, eg. MCT2-M

APPLICATIONS

• Power supply regulators

• Digital logic inputs

• Microprocessor inputs

SCHEMATIC

PIN 1. ANODE

2. CATHODE

3. NO CONNECTION

4. EMITTER

5. COLLECTOR

6. BASE

2

1

3NC

5

6

4

10/10/03

MCT2 MCT2E MCT210 MCT271

MCT2200 MCT2201 MCT2202

PHOTOTRANSISTOR OPTOCOUPLERS

Page 2 of 14

ABSOLUTE MAXIMUM RATINGS

Parameter Symbol Device Value Units

TOTAL DEVICE

Storage Temperature

T

STG

ALL -55 to +150 °C

Operating Temperature T

OPR

ALL -55 to +100 °C

Lead Solder Temperature T

SOL

ALL 260 for 10 sec °C

Total Device Power Dissipation @ T

A

= 25°C

P

D

-M 250

mW

Non-M 260

Derate above 25°C

-M 2.94

mW/°C

Non-M 3.3

EMITTER

DC/Average Forward Input Current

I

F

-M 60

mA

Non-M 100

Reverse Input Voltage V

R

ALL 3 V

Forward Current - Peak (300µs, 2% Duty Cycle) I

F

(pk) ALL 3 A

LED Power Dissipation @ T

A

= 25°CP

D

-M 120

mW

Non-M 150

Derate above 25°C

-M 1.41

mW/°C

Non-M 2.0

DETECTOR

Collector Current

I

C

ALL 50 mA

Collector-Emitter Voltage V

CEO

ALL 30 V

Detector Power Dissipation @ T

A

= 25°C

P

D

ALL 150 mW

Derate above 25°C

-M 1.76

mW/°C

Non-M 2.0

10/10/03

Page 3 of 14

MCT2 MCT2E MCT210 MCT271

MCT2200 MCT2201 MCT2202

PHOTOTRANSISTOR OPTOCOUPLERS

** Typical values at T

A

= 25°C

ELECTRICAL CHARACTERISTICS

(T

A

= 25°C Unless otherwise speciﬁed.)

Individual Component Characteristics

Parameter Test Conditions Symbol Device Min Typ** Max Unit

EMITTER

Input Forward Voltage

(I

F

= 20 mA)

V

F

MCT2/-M

MCT2E/-M

MCT271

MCT2200

MCT2201

MCT2202

1.25 1.50 V

(T

A

= 0-70°C, I

F

= 40 mA) MCT210 1.33

Reverse Leakage Current

(V

R

= 3.0 V) I

R

MCT2/-M

MCT2E/-M

MCT271

MCT2200

MCT2201

MCT2202

0.001 10 µA

(T

A

= 0-70°C, V

R

= 6.0 V) MCT210

DETECTOR

(I

C

= 1.0 mA, I

F

= 0)

BV

CEO

ALL

30 100 V

Collector-Emitter Breakdown Voltage (T

A

= 0-70°C) MCT210

Collector-Base Breakdown Voltage

(I

C

= 10 µA, I

F

= 0) BV

CBO

MCT2/-M

MCT2E/-M

MCT271

MCT2200

MCT2201

MCT2202

70 120 V

(T

A

= 0-70°C) MCT210 30

Emitter-Collector Breakdown Voltage

(I

E

= 100 µA, I

F

= 0) BV

ECO

MCT2/-M

MCT2E/-M

MCT271

MCT2200

MCT2201

MCT2202

710 V

(T

A

= 0-70°C) MCT210 6 10

Collector-Emitter Dark Current

(V

CE

= 10 V, I

F

= 0)

I

CEO

ALL

1 50 nA

(V

CE

= 5 V, T

A

= 0-70°C) 30 µA

Collector-Base Dark Current (V

CB

= 10 V, I

F

= 0) I

CBO

ALL 20 nA

Capacitance (V

CE

= 0 V, f = 1 MHz) C

CE

ALL 8 pF

MCT210300

MCT210300

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