SOT23 NPN SILICON PLANAR
DARLINGTON TRANSISTORS
ISSUE 3 SEPTEMBER 1995 ✪
FEATURES
*High V
CEO
* Low saturation voltage
COMPLEMENTARY TYPES BCV27 BCV28
BCV47 BCV48
PARTMARKING DETAILS BCV27 ZFF
BCV47 ZFG
ABSOLUTE MAXIMUM RATINGS.
PARAMETER SYMBOL BCV27 BCV47 UNIT
Collector-Base Voltage V
CBO
40 80 V
Collector-Emitter Voltage V
CEO
30 60 V
Emitter-Base Voltage V
EBO
10 V
Peak Pulse Current I
CM
800 mA
Continuous Collector Current I
C
500 mA
Base Current I
B
100 mA
Power Dissipation at T
amb
=25°C P
tot
330 mW
Operating and Storage Temperature Range T
j
:T
stg
-55 to +150 °C
ELECTRICAL CHARACTERISTICS (at T
amb
= 25°C unless otherwise stated).
PARAMETER SYMBOL BCV27 BCV47 UNIT CONDITIONS.
MIN. MAX. MIN. MAX.
Collector-Base
Breakdown Voltage
V
(BR)CBO
40 80 V
I
C
=100µA
Collector-Emitter
Breakdown Voltage
V
(BR)CEO
30 60 V I
C
=10mA*
Emitter-Base
Breakdown Voltage
V
(BR)EBO
10 10 V
I
E
=10µA
Collector Cut-Off
Current
I
CBO
100
10
100
10
nA
nA
µA
µA
V
CB
= 30V
V
CB
= 60V
V
CB
=30V,T
amb
=150
o
C
V
CB
=60V,T
amb
=150
o
C
Emitter Base
Cut-Off Current
I
EBO
100 100 nA V
EB
=4V
Collector-Emitter
Saturation Voltage
V
CE(sat)
1.0 1.0 V I
C
=100mA,I
B
=0.1mA*
Base-Emitter
Saturation Voltage
V
BE(sat)
1.5 1.5 V I
C
=100mA,I
B
=0.1mA*
Static Forward Current
Transfer Ratio
h
FE
4K
10K
20K
4K
2K
4K
10K
2K
I
C
=100µA, V
CE
=1V
I
C
=10mA, V
CE
=5V*
I
C
=100mA, V
CE
=5V*
I
C
=500mA, V
CE
=5V*
Transition Frequency f
T
170 Typical 170 Typical MHz I
C
=50mA, V
CE
=5V
f = 20MHz
Output Capacitance C
obo
3.5 Typical 3.5 Typical pF V
CB
=10V, f=1MHz
*Measured under pulsed conditions. Pulse width=300
µs. Duty cycle ≤2%
Periodic Sample Test Only. For typical graphs see FMMT38A datasheet
BCV27
BCV47
C
B
E
SOT23
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