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MBRS260T3

P1-P3P4-P5
© Semiconductor Components Industries, LLC, 2013
January, 2018 − Rev. 9
1 Publication Order Number:
MBRS260T3/D
MBRS260T3G,
NRVBS260T3G
Surface Mount
Schottky Power Rectifier
SMB Power Surface Mount Package
This device employs the Schottky Barrier principle in a
metal−to−silicon power rectifier. Features epitaxial construction with
oxide passivation and metal overlay contact. Ideally suited for low
voltage, high frequency switching power supplies; free wheeling
diodes and polarity protection diodes.
Features
• Compact Package with J−Bend Leads Ideal for Automated Handling
• Highly Stable Oxide Passivated Junction
• Guard−Ring for Over−Voltage Protection
• Low Forward Voltage Drop
• NRVB Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q101
Qualified and PPAP Capable*
• These are Pb−Free Devices
Mechanical Characteristics
• Case: Molded Epoxy
• Epoxy Meets UL 94 V−0 @ 0.125 in
• Weight: 95 mg (Approximately)
• Cathode Polarity Band
• Lead and Mounting Surface Temperature for Soldering Purposes:
260°C Max. for 10 Seconds
• Finish: All External Surfaces Corrosion Resistant and Terminal
Leads are Readily Solderable
• ESD Ratings:
♦ Machine Model = C
♦ Human Body Model = 3B
SCHOTTKY BARRIER
RECTIFIER
2.0 AMPERES, 60 VOLTS
www.onsemi.com
†For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
s
Brochure, BRD8011/D.
MARKING DIAGRAM
(Note: Microdot may be in either location)
Device Package Shipping
†
ORDERING INFORMATION
MBRS260T3G,
NRVBS260T3G*,
NRVBS260T3G−VF01*
SMB
(Pb−Free)
2,500 /
Tape & Reel
**The Assembly Location code (A) is front sid
e
optional. In cases where the Assembly Location
is
stamped in the package bottom (molding ejecter pin
),
the front side assembly code may be blank.
SMB
CASE 403A
B26 = Specific Device Code
A = Assembly Location**
Y = Year
WW = Work Week
G = Pb−Free Package
AYWW
B26G
G
MBRS260T3G, NRVBS260T3G
www.onsemi.com
2
MAXIMUM RATINGS
Rating Symbol Value Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
60 V
Average Rectified Forward Current
(At Rated V
R
, T
L
= 95°C)
I
O
2.0
A
Non−Repetitive Peak Surge Current
(Surge Applied at Rated Load Conditions Halfwave, Single Phase, 60 Hz)
I
FSM
60
A
Storage Temperature Range T
stg
−55 to +150 °C
Operating Junction Temperature T
J
−55 to +125 °C
Voltage Rate of Change
(Rated V
R
, T
J
= 25°C)
dv/dt
10,000
V/ms
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
THERMAL CHARACTERISTICS
Characteristic Symbol Value Unit
Thermal Resistance, Junction−to−Lead (Note 1)
Thermal Resistance, Junction−to−Ambient (Note 2)
R
q
JL
R
q
JA
24
80
°C/W
1. Mounted with minimum recommended pad size, PC Board FR4.
2. 1 inch square pad size (1 x 0.5 inch for each lead) on FR4 board.
ELECTRICAL CHARACTERISTICS
Characteristic Symbol Value Unit
Maximum Instantaneous Forward Voltage (Note 3)
(i
F
= 1.0 A)
(i
F
= 2.0 A)
v
F
T
J
= 25°C T
J
= 125°C
V
0.51
0.63
0.475
0.55
Maximum Instantaneous Reverse Current (Note 3)
(V
R
= 60 V)
I
R
T
J
= 25°C T
J
= 125°C
mA
0.2 20
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
3. Pulse Test: Pulse Width ≤ 250 ms, Duty Cycle ≤ 2.0%.
MBRS260T3G, NRVBS260T3G
www.onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Typical Forward Voltage
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
Figure 2. Maximum Forward Voltage
V
F
, INSTANTANEOUS FORWARD VOLTAGE (V)
I
F
, INSTANTANEOUS FORWARD
CURRENT (A)
Figure 3. Typical Reverse Current
I
R
, REVERSE CURRENT (A)
V
R
, REVERSE VOLTAGE (V)
Figure 4. Typical Capacitance
T
A
= 75°C
T
A
= 25°C
10 3002040
10
C, CAPACITANCE (pF)
V
R
, REVERSE VOLTAGE (VOLTS)
T
A
= 125°C
50 6
0
100
25°C
f = 1 MHz
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8
T
A
= 150°C
T
A
= −40°C
0.1
1
10
0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0
.8
T
A
= 125°C
T
A
= 75°C
T
A
= 150°C
T
A
= 25°C
T
A
= −40°C
0 102030405060
1.0E−01
1.0E−02
1.0E−03
1.0E−04
1.0E−05
1.0E−06
1.0E−07
T
A
= 150°C
T
A
= 125°C
T
A
= 75°C
T
A
= 25°C
Figure 5. Current Derating − Junction to Lead
I
F
, AVERAGE FORWARD CURRENT (A)
T
L
, LEAD TEMPERATURE (°C)
Figure 6. Forward Power Dissipation
0.5 1.501 2
0
0.2
P
FO
, AVERAGE POWER DISSIPATION (W
)
I
O
, AVERAGE FORWARD CURRENT (AMPS)
0.4
0.6
2.5
3
1
1.8
2
0.8
1.2
1.4
1.6
dc
SQUARE WAVE
0
0.5
1
1.5
2
2.5
3
3.5
60 70 80 90 100 110 120 130 140 150
dc
SQUARE WAVE
R
q
JL
= 24°C/W
P1-P3P4-P5

MBRS260T3

Mfr. #:
Buy MBRS260T3
Manufacturer:
ON Semiconductor
Description:
Schottky Diodes & Rectifiers 2A 60V Low Vf
Lifecycle:
New from this manufacturer.
Delivery:
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