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IPG20N06S4L11AATMA1

P1-P3P4-P6P7-P9
IPG20N06S4L-11A
OptiMOS™-T2 Power-Transistor
Features
• Dual N-channel Logic Level - Enhancement mode
• AEC Q101 qualified
• MSL1 up to 260°C peak reflow
• 175°C operating temperature
• Green Product (RoHS compliant)
• 100% Avalanche tested
• Feasible for automatic optical inspection (AOI)
Maximum ratings, at T
j
=25 °C, unless otherwise specified
Parameter Symbol Conditions Unit
Continuous drain current
one channel active
I
D
T
C
=25 °C, V
GS
=10 V
1)
20 A
T
C
=100 °C,
V
GS
=10 V
2)
20
Pulsed drain current
2)
one channel active
I
D,pulse
-
80
Avalanche energy, single pulse
2, 4)
E
AS
I
D
=10A
165 mJ
Avalanche current, single pulse
4)
I
AS
-
15 A
Gate source voltage
V
GS
- ±16 V
Power dissipation
one channel active
P
tot
T
C
=25 °C
65 W
Operating and storage temperature
T
j
, T
stg
- -55 ... +175 °C
Value
V
DS
60 V
R
DS(on),max
4)
11.2
mW
I
D
20 A
Product Summary
Type Package Marking
IPG20N06S4L-11A PG-TDSON-8-10 4N06L11
PG-TDSON-8-10
Rev. 1.0
page 1 2015-05-04
IPG20N06S4L-11A
Parameter Symbol Conditions Unit
min. typ. max.
Thermal characteristics
2)
Thermal resistance, junction - case
R
thJC
- - - 2.3 K/W
SMD version, device on PCB
R
thJA
minimal footprint - 100 -
6 cm
2
cooling area
3)
- 60 -
Electrical characteristics, at T
j
=25 °C, unless otherwise specified
Static characteristics
Drain-source breakdown voltage
V
(BR)DSS
V
GS
=0 V, I
D
= 1 mA
60 - - V
Gate threshold voltage
V
GS(th)
V
DS
=V
GS
, I
D
= 28µA
1.2 1.7 2.2
Zero gate voltage drain current
4)
I
DSS
V
DS
=60 V, V
GS
=0 V,
T
j
=25 °C
- 0.01 1 µA
V
DS
=60 V, V
GS
=0 V,
T
j
=125 °C
2)
- 5 100
Gate-source leakage current
4)
I
GSS
V
GS
=16 V, V
DS
=0 V
- - 100 nA
Drain-source on-state resistance
4)
R
DS(on)
V
GS
=4.5 V, I
D
=10 A
- 12.5 15.8
mW
V
GS
=10 V, I
D
=17 A
- 9.5 11.2
Values
Rev. 1.0
page 2 2015-05-04
IPG20N06S4L-11A
Parameter Symbol Conditions Unit
min. typ. max.
Dynamic characteristics
2)
Input capacitance
4)
C
iss
- 3090 4020 pF
Output capacitance
4)
C
oss
- 720 940
Reverse transfer capacitance
4)
C
rss
- 34 68
Turn-on delay time
t
d(on)
- 11 - ns
Rise time
t
r
- 3.0 -
Turn-off delay time
t
d(off)
- 58 -
Fall time
t
f
- 19 -
Gate Charge Characteristics
2, 4)
Gate to source charge
Q
gs
- 10 13 nC
Gate to drain charge
Q
gd
- 4 8
Gate charge total
Q
g
- 41 53
Gate plateau voltage
V
plateau
- 3.2 - V
Reverse Diode
Diode continous forward current
2)
one channel active
I
S
- - 20 A
Diode pulse current
2)
one channel active
I
S,pulse
- - 80
Diode forward voltage
V
SD
V
GS
=0 V, I
F
=17 A,
T
j
=25 °C
- 0.95 1.3 V
Reverse recovery time
2)
t
rr
V
R
=30 V, I
F
=I
S
,
di
F
/dt=100 A/µs
- 40 - ns
Reverse recovery charge
2, 4)
Q
rr
- 40 - nC
4)
Per channel
3)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm
2
(one layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
1)
Current is limited by bondwire; with an R
thJC
= 2.3K/W the chip is able to carry 57A at 25°C.
T
C
=25 °C
Values
V
GS
=0 V, V
DS
=25 V,
f=1 MHz
V
DD
=30 V, V
GS
=10 V,
I
D
=20 A, R
G
=11 W
V
DD
=48 V, I
D
=20 A,
V
GS
=0 to 10 V
2)
Specified by design. Not subject to production test.
Rev. 1.0
page 3 2015-05-04
P1-P3P4-P6P7-P9

IPG20N06S4L11AATMA1

Mfr. #:
Buy IPG20N06S4L11AATMA1
Manufacturer:
Infineon Technologies
Description:
MOSFET N-CHANNEL_55/60V
Lifecycle:
New from this manufacturer.
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