PI49FCT32805QEX

1
PS8494C 12/19/05
3.3V, 2 x 1:5 CMOS Clock Driver
Block Diagram
PI49FCT32805
Description
Pericom Semiconductors PI49FCT32805 is a fast speed, low skew,
fast slew rate, and low propagation delay for most computing and
communication applications.
The devices are non-inverting drivers. The outputs are congured
into 2 groups of 1-in, 5-out with independent output enable. Group
B has an extra MON output. Excellent output signals to power and
ground ratio minimize power and ground noise, and also improves
output performance.
PI49FCT32805 integrate series damping resistors on all outputs.
Features
Low output skew: <270ps
Switching frequency of 133 MHz
Fast output rise/fall time <1.5ns
Low propagation delay <3.0ns
Low input capacitance <6.0pF
Balanced CMOS outputs
Industrial Temperature: –40°C to +85°C
3.3V ±10% operation
Packaging: (Pb-free & Green Available)
– 20-pin 300-mil wide SOIC (S)
– 20-pin 150-mil wide QSOP (Q)
– 20-pin 209-mil wide SSOP (H)
Pin Conguration
Pin Description
Pin Name Description
OE
A
, OE
B
Hi-Z State Output Enable Inputs
(Active LOW)
IN
A
, IN
B
Clock Inputs
O
A
N
,
O
B
N
Clock Outputs
MON Monitor Output
GND Ground
V
CC
Power
Truth Table
(1)
Inputs Outputs
OE
A
,
OE
B
IN
A
,
IN
B
O
A
N
,
O
B
N
MON
L L L L
L H H H
H L Z L
H H Z H
Note:
1. H = High Voltage Level, L = Low Voltage Level
Z = High Impedance
OE
B
IN
A
OA
0-4
IN
B
OE
A
OB
0-4
MON
5
5
V
CCB
V
CCA
1 20
O
B
0O
A
0
2 19
O
B
1O
A
1
3 18
O
B
2O
A
2
4 17
GND
B
GND
A
5 16
O
B
3O
A
3
6 15
O
B
4O
A
4
7 14
MONGND
Q
8 13
OE
B
OE
A
9 12
IN
B
IN
A
10 11
2
PS8494C 12/19/05
PI49FCT32805
3.3V, 2 x 1:5 CMOS Clock Driver
Storage Temperature .......................................................... –65°C to +150°C
Ambient Temperature with Power Applied ......................... –40°C to +85°C
Supply Voltage to Ground Potential (Inputs & V
CC
Only)... –0.5V to +4.6V
Supply Voltage to Ground Potential (Outputs & I/O Only).. –0.5V to +4.6V
DC Input Voltage .................................................................. –0.5V to +4.6V
DC Output Current............................................................................ 120 mA
Power Dissipation ................................................................................. 0.5W
Note:
Stresses greater than those listed under MAXIMUM RAT-
INGS may cause permanent damage to the device. This is
a stress rating only and functional operation of the device
at these or any other conditions above those indicated in
the operational sections of this specication is not implied.
Exposure to absolute maximum rating conditions for ex-
tended periods may affect reliability.
Maximum Ratings
Notes:
1. For Max or Min conditions, use appropriate value specied under Electrical Characteristics for the applicable device type.
2. V
OH
= V
CC
– 0.6V at rated current.
3. This parameter is guaranteed by device characterization.
4. Not more than one output should be shorted at one time. Duration of the test should not exceed one second.
DC Electrical Characteristics (T
A
= –40°C to +85°C, V
CC
= 3.3V ± 10%)
Symbol Parameter Test Condition
(1)
Min. Typ. Max. Units
V
OH
Output High Voltage
V
CC
= 3.0V, V
IN
= V
IL
or V
IH
I
OH
= -8mA 2.4
(2)
3.0
V
V
OL
Output Low Voltage
V
CC
= 3.0V, V
IN
= V
IL
or V
IH
I
OL
= +12mA 0.4 0.5
V
IH
Input High Voltage 2.0 V
CC
-0.2
V
IL
Input Low Voltage -0.5 0.8
I
IH
Input High Current V
CC
= Max., V
IN
= V
CC
1
µA
I
IL
Input Low Current V
CC
= Max., V
IN
= GND -1
I
OZH
High Impedance Output
Current
V
CC
= Max.,
All outputs Disabled
V
OUT
= V
CC
1
I
OZL
High Impedance Output
Current
V
CC
= Max.,
All outputs Disabled V
OUT
= GND
-1
V
IK
Clamp Diode Voltage V
CC
= Min., I
IN
= -18mA -0.9 -1.2 V
I
OH
Output HIGH Current
(3)
V
OUT
= 1.5V, V
IN
=V
IL
or V
IH,
V
CC
= 3.3V -25 -55 -80
mAI
OL
Output LOW
Current
(3)
V
OUT
= 1.5V, V
IN
= V
IL
or V
IH,
V
CC
= 3.3V 25 45 90
I
OS
Short Circuit Current
(4)
V
CC
= Max., V
OUT
= GND -50 -100 -180
R
S
Internal Series Resistor 20
Note:
1. This parameter is determined by device characterization.
Capacitance (T
A
= 25°C, f = 1 MHz)
Parameters
(1)
Description Test Conditions Typ Max. Units
C
IN
Input Capacitance V
IN
= 0V 4
pF
C
OUT
Output Capacitance V
OUT
= 0V 6
3
PS8494C 12/19/05
PI49FCT32805
3.3V, 2 x 1:5 CMOS Clock Driver
Power Supply Characteristics
Parameters Description
Test Conditions
(1)
Condition Min. Typ Max. Units
I
CC
Quiescent Power
Supply Current
V
CC
= Max
V
IN
= GND
or V
CC
0.1 30
µA
ΔI
CC
Supply Current per
Inputs @ TTL HIGH
V
CC
= Max
V
IN
= V
CC
0.6V
(2)
110 300
I
CCD
Supply Current per
Output per MHz
(3)
V
CC
= Max,
Outputs Open
OEA or OEB = GND
50% Duty Cycle
V
IN
= V
CC
V
IN
= GND
0.09
Per Output
Toggling
0.16
mA/
MHZ
I
C
V
CC
= Max,
Outputs Open
f
O
= 10 MHZ
50% Duty Cycle
OEA or OEB = GND
Mon. Outputs Toggling
V
IN
= V
CC
V
IN
= GND
1.3 9.0
(4)
mA
V
IN
= V
CC
0.6V
V
IN
= GND
1.3 10.0
(4)
V
CC
= Max,
Outputs Open
f
O
= 2.5 MHZ
50% Duty Cycle
OEA or OEB = GND
Eleven Outputs Toggling
V
IN
= V
CC
V
IN
= GND
4.4 6.0
(4)
V
IN
= V
CC
0.6V
V
IN
= GND
4.4 7.0
(4)
Notes:
1. For Max or Min conditions, use appropriate value specied under Electrical Characteristics for the applicable device.
2. Per TTL driven input (V
IN
= V
CC
– 0.6V); all other inputs at V
CC
or GND.
3. This parameter is not directly testable, but is derived for use in Total Power Supply Calculations.
4. Values for these conditions are examples of the IC formula. These limits are guaranteed but not tested.

PI49FCT32805QEX

Mfr. #:
Manufacturer:
Diodes Incorporated
Description:
Clock Buffer 3805 with 25Ohm Resistor
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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