PMBFJ111_112_113 All information provided in this document is subject to legal disclaimers. © NXP B.V. 2011. All rights reserved.
Product data sheet Rev. 4 — 20 September 2011 2 of 9
NXP Semiconductors
PMBFJ111; PMBFJ112; PMBFJ113
N-channel junction FETs
3. Ordering information
4. Marking
[1] * = p: Made in Hong Kong
* = t: Made in Malaysia
* = W: Made in China
5. Limiting values
[1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
6. Thermal characteristics
[1] Mounted on a ceramic substrate, 8 mm 10 mm 0.7 mm.
[2] Mounted on printed circuit board.
Table 2. Ordering information
Type number Package
Name Description Version
PMBFJ111 - plastic surface mounted package; 3 leads SOT23
PMBFJ112
PMBFJ113
Table 3. Marking
Type number Marking code
[1]
PMBFJ111 41*
PMBFJ112 42*
PMBFJ113 47*
Table 4. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions Min Max Unit
V
DS
drain-source voltage (DC) - 40 V
V
GSO
gate-source voltage - 40 V
V
GDO
gate-drain voltage - 40 V
I
G
forward gate current (DC) - 50 mA
P
tot
total power dissipation T
amb
= 25 C
[1]
-300mW
T
stg
storage temperature 65 +150 C
T
j
junction temperature - 150 C
Table 5. Thermal characteristics
T
j
= P (R
th(j-t)
+R
th(t-s)
+R
th(s-a)
)+T
amb
.
Symbol Parameter Conditions Typ Unit
R
th(j-a)
thermal resistance from junction to ambient
[1]
430 K/W
thermal resistance from junction to ambient
[2]
500 K/W
