OMO ElectronicOMO Electronic
Expand menu
Hello, Sign inMy Account
0 Cart

NCV8401BDTRKG

P1-P3P4-P6P7-P9P10-P10
NCV8401A, NCV8401B
www.onsemi.com
4
TYPICAL PERFORMANCE CURVES
Figure 2. Single Pulse Maximum Switch−off
Current vs. Load Inductance
Figure 3. Single Pulse Maximum Switching
Energy vs. Load Inductance
L (mH) L (mH)
10010
1
10
100
10010
100
1,000
10,000
V
DS
(V) V
GS
(V)
543210
0
5
10
20
25
30
40
45
4.03.53.02.52.01.51.0
0
5
10
15
20
25
30
I
L(max)
(A)
E
max
(mJ)
I
D
(A)
I
D
(A)
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
15
35
V
GS
= 2.5 V
3 V
4 V
5 V
6 V 7 V 8 V 9 V
10 V
−40°C
25°C
100°C
150°C
Figure 4. Single Pulse Maximum Inductive
Switch−off Current vs. Time in Clamp
Figure 5. Single Pulse Maximum Inductive
Switching Energy vs. Time in Clamp
Time in Clamp (ms) Time in Clamp (ms)
101
1
10
100
1001
100
1,000
10,000
I
L(max)
(A)
E
max
(mJ)
T
Jstart
= 25°C
T
Jstart
= 150°C
T
Jstart
= 25°C
T
Jstart
= 150°C
Figure 6. On−state Output Characteristics
at 255C
Figure 7. Transfer Characteristics (V
DS
= 10 V)
NCV8401A, NCV8401B
www.onsemi.com
5
TYPICAL PERFORMANCE CURVES
Figure 8. R
DS(on)
vs. Gate−Source Voltage Figure 9. R
DS(on)
vs. Drain Current
V
GS
(V) I
D
(A)
R
DS(on)
(m
W
)
R
DS(on)
(mW)
−40°C
25°C
100°C
150°C
−40°C, V
GS
= 5 V
−40°C, V
GS
= 10 V
25°C, V
GS
= 5 V
25°C, V
GS
= 10 V
100°C, V
GS
= 5 V
100°C, V
GS
= 10 V
150°C, V
GS
= 5 V
Figure 10. Normalized R
DS(on)
vs. Temperature
(I
D
= 5 A)
Figure 11. Current Limit vs. Gate−Source
Voltage (V
DS
= 10 V)
T (°C) V
GS
(V)
1201008040200−20−40
0.50
0.75
1.00
1.25
1.50
1.75
2.00
Figure 12. Current Limit vs. Junction
Temperature (V
DS
= 10 V)
Figure 13. Drain−to−Source Leakage Current
(V
GS
= 0 V)
T
J
(°C) V
DS
(V)
4
0
353025201510
0.0001
0.001
0.01
0.1
1
10
100
NORMALIZED R
DS(on)
I
LIM
(A)
I
LIM
(A)
I
DSS
(mA)
60
−40°C
25°C
100°C
140
−40°C
25°C
100°C
150°C
V
GS
= 5 V
V
GS
= 10 V
10
20
30
40
50
60
70
80
345678910
10
15
20
25
30
35
40
45
13579
150°C, V
GS
= 10 V
15
20
25
30
35
40
45
56789
10
150°C
15
20
25
30
35
40
45
−40 −20 0 20 40 60 80 100 120 140
V
GS
= 5 V
V
GS
= 10 V
I
D
= 3 A
NCV8401A, NCV8401B
www.onsemi.com
6
TYPICAL PERFORMANCE CURVES
Figure 14. Normalized Threshold Voltage vs.
Temperature (I
D
= 1.2 mA, V
DS
= V
GS
)
Figure 15. Source−Drain Diode Forward
Characteristics (V
GS
= 0 V)
T (°C) I
S
(A)
1401006040200−20−40
0.6
0.7
0.8
0.9
1.0
1.1
1.2
87654321
0.4
0.5
0.6
0.7
0.8
0.9
1.0
NORMALIZED V
GS(th)
(V)
V
SD
(V)
80 120 910
−40°C
25°C
100°C
150°C
Figure 16. Resistive Load Switching Time vs.
Gate−Source Voltage
(V
DD
= 25 V, I
D
= 5 A, R
G
= 0 W)
Figure 17. Resistive Load Switching
Drain−Source Voltage Slope vs. Gate−Source
Voltage (V
DD
= 25 V, I
D
= 5 A, R
G
= 0 W)
V
GS
(V) V
GS
(V)
109876543
0
50
100
150
200
109876543
0
0.5
1.0
1.5
2.0
Figure 18. Resistive Load Switching Time vs.
Gate Resistance (V
DD
= 25 V, I
D
= 5 A)
Figure 19. Drain−Source Voltage Slope during
Turn On and Turn Off vs. Gate Resistance
(V
DD
= 25 V, I
D
= 5 A)
R
G
(W)R
G
(W)
2000150010005000
0
25
50
75
100
125
2000150010005000
0
0.2
0.4
0.6
0.8
1.4
1.6
2.0
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
TIME (ms)
DRAIN−SOURCE VOLTAGE SLOPE (V/ms)
t
d(off)
t
d(on)
t
f
t
r
−dV
DS
/d
t(on)
dV
DS
/d
t(off)
t
d(on)
, V
GS
= 5 V
t
d(off)
, V
GS
= 5 V
t
r
, V
GS
= 5 V
t
f
, V
GS
= 5 V
t
d(on)
, V
GS
= 10 V
t
d(off)
, V
GS
= 10 V
t
r
, V
GS
= 10 V
t
f
, V
GS
= 10 V
1.0
1.2
1.8
−dV
DS
/d
t(on)
, V
GS
= 5 V
dV
DS
/d
t(off)
, V
GS
= 5 V
−dV
DS
/d
t(on)
, V
GS
= 10 V
dV
DS
/d
t(off)
, V
GS
= 10 V
P1-P3P4-P6P7-P9P10-P10

NCV8401BDTRKG

Mfr. #:
Buy NCV8401BDTRKG
Manufacturer:
ON Semiconductor
Description:
Gate Drivers SELF-PROTECTED FET
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

Products related to this Datasheet