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ILD1206T

P1-P3P4-P6P7-P8
Vishay Semiconductors
ILD1205T/1206T/1207T
Document Number 83599
Rev. 1.9, 20-Apr-07
www.vishay.com
1
For technical support, please contact: optocoupler.answers@vishay.com
Optocoupler, Phototransistor Output, Dual Channel,
SOIC-8 package, 110 °C Rated
FEATURES
• Operating temperature from - 55 °C to
+ 110 °C
• Two Channel Coupler
• SOIC-8 Surface Mountable Package
• Isolation Test Voltage, 4000 V
RMS
• Compatible with Dual Wave, Vapor Phase
and IR Reflow Soldering
• Lead (Pb)-free component
• Component in accordance to RoHS 2002/95/EC
and WEEE 2002/96/EC
i179018
A1
C2
A3
C4
8 C
7E
6C
5E
DESCRIPTION
The 110 °C rated ILD1205T/1206T/1207T are optically
coupled pairs with a Gallium Arsenide infrared LED
and a silicon NPN phototransistor. Signal information,
including a DC level, can be transmitted by the device
while maintaining a high degree of electrical isolation
between input and output. The ILD1205T/1206T/
1207T come in a standard SOIC-8 small outline
package for surface mounting which makes it ideally
suited for high density applications with limited space.
In addition to eliminating through-holes requirements,
this package conforms to standards for surface
mounted devices.
A specified minimum and maximum CTR allows a
narrow tolerance in the electrical design of the
adjacent circuits. The high BV
CEO
of 70 V gives a
higher safety margin compared to the industry
standard of 30 V.
AGENCY APPROVALS
• UL - File No. E52744 System Code Y
• CUL - File No. E52744, equivalent to CSA
bulletin 5A
• DIN EN 60747-5-2(VDE0884)
Available with Option 1
APPLICATIONS
• AC Adapters
•PLCs
• Switch Mode Power Supplies
• DC/DC Converters
• Microprocessor I/O Interfaces
• General impedance matching circuits
Note:
For additional information on the available options refer to Option Information.
ORDER INFORMATION
PART REMARKS
ILD1205T CTR 40 - 80 %, SOIC-8
ILD1206T CTR 63 - 125 %, SOIC-8
ILD1207T CTR 100 - 200 %, SOIC-8
www.vishay.com
2
Document Number 83599
Rev. 1.9, 20-Apr-07
Vishay Semiconductors
ILD1205T/1206T/1207T
For technical support, please contact: optocoupler.answers@vishay.com
Note:
1)
T
amb
= 25 °C, unless otherwise specified.
Stresses in excess of the absolute Maximum Ratings can cause permanent damage to the device. Functional operation of the device is not
implied at these or any other conditions in excess of those given in the operational sections of this document. Exposure to absolute Maximum
Rating for extended periods of the time can adversely affect reliability.
ABSOLUTE MAXIMUM RATINGS
1)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
INPUT
Continuous forward current per
channel
I
F
30 mA
Peak reverse voltage
V
R
6.0 V
Peak pulsed current 1.0 µs, 300 pps
I
FSM
1.0 A
Power dissipation
P
diss
50 mW
Derate linearly from 25 °C 0.5 mW/°C
OUTPUT
Collector-emitter voltage
V
CE
70 V
Power dissipation per channel
P
diss
125 mW
Derate linearly from 25 °C 1.25 mW/°C
COUPLER
Isolation test voltage t = 1.0 s
V
ISO
4000
V
RMS
Operating temperature
T
amb
- 55 to + 110 °C
Total package dissipation
ambient (2 LEDs + 2 detectors,
2 channels)
P
tot
300 mW
Derate linearly from 25 °C 4.0 mW/°C
Storage temperature
T
stg
- 55 to + 150 °C
Figure 1. Power Dissipation vs. Ambient Temperature
0
30
60
90
120
150
020406080 100 120
Ambient Temperature (°C)
17544
P (mW)
Phototransistor
total
IR - Diode
Document Number 83599
Rev. 1.9, 20-Apr-07
www.vishay.com
3
Vishay Semiconductors
ILD1205T/1206T/1207T
For technical support, please contact: optocoupler.answers@vishay.com
Note:
1)
T
amb
= 25 °C, unless otherwise specified.
Minimum and maximum values are testing requirements. Typical values are characteristics of the device and are the result of engineering
evaluation. Typical values are for information only and are not part of the testing requirements.
ELECTRICAL CHARACTERISTICS
1)
PARAMETER TEST CONDITION PART SYMBOL MIN TYP. MAX UNIT
INPUT
Forward voltage
I
F
= 10 mA V
F
1.2 1.55 V
Reverse current
V
R
= 6.0 V I
R
0.1 100 µA
Capacitance
V
R
= 0 C
I
25 pF
OUTPUT
Collector-emitter leakage current
V
CE
= 10 V, I
F
= 0 I
CEO
5.0 50 nA
Collector-emitter breakdown voltage
I
C
= 100 µA BV
CEO
70 V
Emitter-collector breakdown voltage
I
E
= 10 µA BV
ECO
7.0 V
Collector-emitter saturation voltage
I
F
= 10 mA, I
C
= 2.5 mA V
CEsat
0.4 V
Collector-emitter capacitance
V
CE
= 0 C
CE
10 pF
COUPLER
DC Current Transfer Ratio
V
CE
= 5.0 V, I
F
= 10 mA
ILD1205T CTR 40 80 %
ILD1206T CTR 63 125 %
ILD1207T CTR 100 200 %
Capacitance (input-output)
C
IO
0.5 pF
SWITCHING CHARACTERISTICS
PARAMETER TEST CONDITION PART SYMBOL MIN. TYPE MAX UNIT
Turn-on time
I
C
= 2.0 mA, R
L
= 100 Ω,
V
CC
= 5.0 V
t
on
5.0 µs
Turn-off time
I
C
= 2.0 mA, R
L
= 100 Ω,
V
CC
= 5.0 V
t
off
4.0 µs
Figure 2. Switching Test Circuit
iild205t_08
t
off
t
r
10 %
50 %
90 %
t
s
t
pdoff
t
pdon
t
on
t
r
t
d
Output
Input
10 %
50 %
90 %
Input
V
OUT
V
CC
= 5 V
R
L
P1-P3P4-P6P7-P8

ILD1206T

Mfr. #:
Buy ILD1206T
Manufacturer:
Vishay Semiconductors
Description:
Transistor Output Optocouplers DUAL CHANNEL CTR 63-125%
Lifecycle:
New from this manufacturer.
Delivery:
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