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V40100C-M3/4W

P1-P3P4-P5
V40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
1
Document Number: 89162
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Dual High Voltage Trench MOS Barrier Schottky Rectifier
Ultra Low V
F
= 0.38 V at I
F
= 5 A
FEATURES
• Trench MOS Schottky technology
• Low forward voltage drop, low power losses
• High efficiency operation
• Low thermal resistance
• Solder dip 275 °C max. 10 s, per JESD 22-B106
• AEC-Q101 qualified
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in high frequency DC/DC converters, switching
power supplies, freewheeling diodes, OR-ing diode, and
reverse battery protection.
MECHANICAL DATA
Case: TO-220AB and TO-262AA
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, RoHS-compliant, and
commercial grade
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 suffix meets JESD 201 class 1A whisker test, HM3 suffix
meets JESD 201 class 2 whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs max.
PRIMARY CHARACTERISTICS
I
F(AV)
2 x 20 A
V
RRM
100 V
I
FSM
250 A
V
F
at I
F
= 20 A 0.61 V
T
J
max. 150 °C
Package TO-220AB, TO-262AA
Diode variation Common cathode
PIN 1
PIN 2
PIN 3
K
VI40100C
TO-220AB
V40100C
1
2
3
PIN 1
PIN 2
CASE
PIN 3
TMBS
®
1
K
2
3
TO-262AA
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V40100C VI40100C UNIT
Max. repetitive peak reverse voltage V
RRM
100 V
Max. average forward rectified current (fig. 1)
per device
I
F(AV)
40
A
per diode 20
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load per diode
I
FSM
250 A
Voltage rate of change (rated V
R
) dV/dt 10 000 V/μs
Operating junction and storage temperature range T
J
, T
STG
-40 to +150 °C
V40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
2
Document Number: 89162
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Notes
(1)
Pulse test: 300 μs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width 40 ms
Note
(1)
AEC-Q101 qualified
ELECTRICAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER TEST CONDITIONS SYMBOL TYP. MAX. UNIT
Instantaneous forward voltage per diode
I
F
= 5 A
T
A
= 25 °C
V
F
(1)
0.47 -
V
I
F
= 10 A 0.54 -
I
F
= 20 A 0.67 0.73
I
F
= 5 A
T
A
= 125 °C
0.38 -
I
F
= 10 A 0.45 -
I
F
= 20 A 0.61 0.67
Reverse current at rated V
R
per diode
V
R
= 70 V
T
A
= 25 °C
I
R
(2)
9-μA
T
A
= 125 °C 10 - mA
V
R
= 100 V
T
A
= 25 °C - 1000 μA
T
A
= 125 °C 21 45 mA
THERMAL CHARACTERISTICS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V40100C VI40100C UNIT
Typical thermal resistance per diode R
JC
2.0 °C/W
ORDERING INFORMATION (Example)
PACKAGE PREFERRED P/N UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE
TO-220AB V40100C-M3/4W 1.85 4W 50/tube Tube
TO-262AA VI40100C-M3/4W 1.45 4W 50/tube Tube
TO-220AB V40100CHM3/4W
(1)
1.85 4W 50/tube Tube
TO-262AA VI40100CHM3/4W
(1)
1.45 4W 50/tube Tube
V40100C, VI40100C
www.vishay.com
Vishay General Semiconductor
Revision: 14-Dec-16
3
Document Number: 89162
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
RATINGS AND CHARACTERISTICS CURVES (T
A
= 25 °C unless otherwise noted)
Fig. 1 - Forward Current Derating Curve
Fig. 2 - Forward Power Loss Characteristics Per Diode
Fig. 3 - Typical Instantaneous Forward Characteristics Per Diode
Fig. 4 - Typical Reverse Characteristics Per Diode
Fig. 5 - Typical Junction Capacitance Per Diode
Fig. 6 - Typical Transient Thermal Impedance Per Diode
Case Temperature (°C)
Average Forward Current (A)
50
40
30
20
10
0
0 25 50 75 100 125 150 175
0
2
4
6
8
10
12
14
16
18
0 5 10 15 20 25
Average Forward Current (A)
Average Power Loss (W)
D = 0.1
D = 0.2
D = 0.3
D = 0.5
D = 0.8
D = 1.0
D = t
p
/T t
p
T
Instantaneous Forward Voltage (V)
0 0.2 0.4 0.6 0.8 1
100
10
1
0.1
T
A
= 25 °C
T
A
= 125 °C
T
A
= 150 °C
T
A
= 100 °C
Instantaneous Forward Current (A)
10 20 30 40
50
60 70 80 90 100
1
0.1
0.01
0.001
100
10
Percent of Rated Peak Reverse Voltage (%)
Instantaneous Reverse Current (mA)
T
A
= 150 °C
T
A
= 25 °C
T
A
= 100 °C
T
A
= 125 °C
110
100
0.1
Reverse Voltage (V)
Junction Capacitance (pF)
10 000
1000
100
10
1
0.1
0.01 0.1 1 10 100
t - Pulse Duration (s)
Transient Thermal Impedance (°C/W)
Junction to Case
P1-P3P4-P5

V40100C-M3/4W

Mfr. #:
Buy V40100C-M3/4W
Manufacturer:
Vishay Semiconductors
Description:
Schottky Diodes & Rectifiers 40 Amp 100 Volt Dual TrenchMOS
Lifecycle:
New from this manufacturer.
Delivery:
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