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MPS8099RLRMG

P1-P3P4-P6P7-P7
© Semiconductor Components Industries, LLC, 2007
April, 2007 − Rev. 0
1 Publication Order Number:
MPS8099/D
NPN − MPS8099; PNP −
MPS8599
Preferred Device
Amplifier Transistors
Voltage and Current are Negative
for PNP Transistors
Features
• Pb−Free Packages are Available*
MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−Emitter Voltage V
CEO
80 Vdc
Collector−Base Voltage V
CBO
80 Vdc
Emitter−Base Voltage V
EBO
4.0 Vdc
Collector Current − Continuous I
C
500 mAdc
Total Device Dissipation @ T
A
= 25°C
Derate above 25°C
P
D
625
5.0
mW
mW/°C
Total Device Dissipation @ T
C
= 25°C
Derate above 25°C
P
D
1.5
12
W
mW/°C
Operating and Storage Junction
Temperature Range
T
J
, T
stg
−55 to +150 °C
THERMAL CHARACTERISTICS
Characteristic Symbol Max Unit
Thermal Resistance, Junction−to−Ambient
(Note 1)
R
q
JA
200 °C/W
Thermal Resistance, Junction−to−Case
R
q
JC
83.3 °C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. R
q
JA
is measured with the device soldered into a typical printed circuit board.
*For additional information on our Pb−Free strategy and soldering details, please
download the ON Semiconductor Soldering and Mounting Techniques
Reference Manual, SOLDERRM/D.
Preferred devices are recommended choices for future use
and best overall value.
http://onsemi.com
COLLECTOR
3
2
BASE
1
EMITTER
NPN
COLLECTOR
3
2
BASE
1
EMITTER
PNP
See detailed ordering and shipping information in the package
dimensions section on page 3 of this data sheet.
ORDERING INFORMATION
1
2
3
1
2
BENT LEAD
TAPE & REEL
AMMO PACK
STRAIGHT LEAD
BULK PACK
3
TO−92
CASE 29
STYLE 1
MARKING DIAGRAM
MPS
8x99
AYWW G
G
x = 0 or 5
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
(Note: Microdot may be in either location)
NPN − MPS8099; PNP − MPS8599
http://onsemi.com
2
ELECTRICAL CHARACTERISTICS (T
A
= 25°C unless otherwise noted)
Characteristic
Symbol Min Max Unit
OFF CHARACTERISTICS
Collector−Emitter Breakdown Voltage (Note 2)
(I
C
= 10 mAdc, I
B
= 0)
V
(BR)CEO
80 −
Vdc
Collector−Base Breakdown Voltage
(I
C
= 100 mAdc, I
E
= 0)
V
(BR)CBO
80 −
Vdc
Emitter−Base Breakdown Voltage
(I
E
= 10 mAdc, I
C
= 0)
V
(BR)EBO
5.0 −
Vdc
Collector Cutoff Current
(V
CE
= 60 Vdc, I
B
= 0)
I
CES
− 0.1
mAdc
Collector Cutoff Current
(V
CB
= 80 Vdc, I
E
= 0)
I
CBO
− 0.1
mAdc
Emitter Cutoff Current
(V
EB
= 4.0 Vdc, I
C
= 0)
I
EBO
− 0.1
mAdc
ON CHARACTERISTICS (Note 2)
DC Current Gain
(I
C
= 1.0 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
(I
C
= 100 mAdc, V
CE
= 5.0 Vdc)
h
FE
100
100
75
300
−
−
−
Collector−Emitter Saturation Voltage
(I
C
= 100 mAdc, I
B
= 5.0 mAdc)
(I
C
= 100 mAdc, I
B
= 10 mAdc)
V
CE(sat)
−
−
0.4
0.3
Vdc
Base−Emitter On Voltage
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc)
V
BE(on)
0.6 0.8
Vdc
SMALL−SIGNAL CHARACTERISTICS
Current−Gain − Bandwidth Product
(I
C
= 10 mAdc, V
CE
= 5.0 Vdc, f = 100 MHz)
f
T
150 −
MHz
Output Capacitance
(V
CB
= 5.0 Vdc, I
E
= 0, f = 1.0 MHz)
C
obo
− 8.0
pF
Input Capacitance
(V
EB
= 0.5 Vdc, I
C
= 0, f = 1.0 MHz)
C
ibo
− 30
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle = 2.0%.
NPN − MPS8099; PNP − MPS8599
http://onsemi.com
3
ORDERING INFORMATION
Device Package Shipping
†
MPS8099 TO−92 5000 Units / Bulk
MPS8099G TO−92
(Pb−Free)
5000 Units / Bulk
MPS8099RLRA TO−92 2000 / Tape & Reel
MPS8099RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
MPS8099RLRP TO−92 2000 / Ammo Pack
MPS8099RLRPG TO−92
(Pb−Free)
2000 / Ammo Pack
MPS8599RLRA TO−92 2000 / Tape & Reel
MPS8599RLRAG TO−92
(Pb−Free)
2000 / Tape & Reel
MPS8599RLRMG TO−92
(Pb−Free)
2000 / Ammo Pack
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specification Brochure, BRD8011/D.
Figure 1. Thermal Response
t, TIME (ms)
1.0 2.0 5.0 10 20 50 100 200 500 1.0 k 2.0 k 5.0 k 10 k 20 k 50 k 100 k
0.03
0.02
0.1
0.07
0.05
0.01
0.3
0.2
1.0
0.7
0.5
r(t), NORMALIZED TRANSIENT
THERMAL RESISTANCE
Z
q
JC
(t) = r(t) • R
q
JC
T
J(pk)
− T
C
= P
(pk)
Z
q
JC
(t)
Z
q
JA
(t) = r(t) • R
q
JA
T
J(pk)
− T
A
= P
(pk)
Z
q
JA
(t)
D CURVES APPLY FOR
POWER PULSE TRAIN
SHOWN READ TIME AT t
1
(SEE AN469)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
P
(pk)
D = 0.5
0.2
0.1
0.02
0.01
SINGLE PULSE
SINGLE PULSE
0.05
Figure 2. Switching Time Test Circuits
OUTPUT
TURN−ON TIME
−1.0 V
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
0
+10 V
5.0 ms
OUTPUT
TURN−OFF TIME
+V
BB
V
CC
+40 V
R
L
* C
S
t 6.0 pF
R
B
100
100
V
in
5.0 mF
t
r
= 3.0 ns
5.0 ms
*Total Shunt Capacitance of Test Jig and Connectors For PNP Test Circuits, Reverse All Voltage Polarities
P1-P3P4-P6P7-P7

MPS8099RLRMG

Mfr. #:
Buy MPS8099RLRMG
Manufacturer:
ON Semiconductor
Description:
Bipolar Transistors - BJT 500mA 80V NPN
Lifecycle:
New from this manufacturer.
Delivery:
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