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NGTB40N120IHRWG

P1-P3P4-P6P7-P9P10-P10
© Semiconductor Components Industries, LLC, 2014
January, 2014 − Rev. 1
1 Publication Order Number:
NGTB40N120IHR/D
NGTB40N120IHRWG
IGBT with Monolithic Free
Wheeling Diode
This Insulated Gate Bipolar Transistor (IGBT) features a robust and
cost effective Field Stop (FS) Trench construction, and provides
superior performance in demanding switching applications, offering
both low on−state voltage and minimal switching loss. The IGBT is
well suited for resonant or soft switching applications.
Features
• Extremely Efficient Trench with Fieldstop Technology
• Low Switching Loss Reduces System Power Dissipation
• Optimized for Low Losses in IH Cooker Application
• Reliable and Cost Effective Single Die Solution
• This is a Pb−Free Device
Typical Applications
• Inductive Heating
• Consumer Appliances
• Soft Switching
ABSOLUTE MAXIMUM RATINGS
Rating Symbol Value Unit
Collector−emitter voltage V
CES
1200 V
Collector current
@ T
C = 25°C
@ T
C = 100°C
I
C
80
40
A
Pulsed collector current, T
pulse
limited by T
Jmax
, 10 ms pulse,
V
GE
= 15 V
I
CM
120 A
Diode forward current
@ T
C = 25°C
@ TC = 100°C
I
F
80
40
A
Diode pulsed current, T
pulse
limited
by T
Jmax
, 10 ms pulse,
V
GE
= 0 V
I
FM
120 A
Gate−emitter voltage
Transient Gate−emitter voltage
(T
pulse
= 5 ms, D < 0.10)
V
GE
$20
$25
V
Power Dissipation
@ T
C = 25°C
@ T
C = 100°C
P
D
384
192
W
Operating junction temperature
range
T
J
−40 to +175 °C
Storage temperature range T
stg
−55 to +175 °C
Lead temperature for soldering, 1/8”
from case for 5 seconds
T
SLD
260 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
TO−247
CASE 340AL
C
G
40 A, 1200 V
V
CEsat
= 2.30 V
E
off
= 0.95 mJ
E
Device Package Shipping
ORDERING INFORMATION
NGTB40N120IHRWG TO−247
(Pb−Free)
30 Units / Rail
http://onsemi.com
A = Assembly Location
Y = Year
WW = Work Week
G = Pb−Free Package
MARKING DIAGRAM
40N120IHR
AYWWG
G
E
C
NGTB40N120IHRWG
http://onsemi.com
2
THERMAL CHARACTERISTICS
Rating Symbol Value Unit
Thermal resistance junction−to−case
R
q
JC
0.39 °C/W
Thermal resistance junction−to−ambient
R
q
JA
40 °C/W
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise specified)
Parameter
Test Conditions Symbol Min Typ Max Unit
STATIC CHARACTERISTIC
Collector−emitter breakdown voltage,
gate−emitter short−circuited
V
GE
= 0 V, I
C
= 500 mA
V
(BR)CES
1200 − − V
Collector−emitter saturation voltage V
GE
= 15 V, I
C
= 40 A
V
GE
= 15 V, I
C
= 40 A, T
J
= 175°C
V
CEsat
−
−
2.30
2.70
2.55
−
V
Gate−emitter threshold voltage
V
GE
= V
CE
, I
C
= 250 mA
V
GE(th)
4.5 5.5 6.5 V
Collector−emitter cut−off current, gate−
emitter short−circuited
V
GE
= 0 V, V
CE
= 1200 V
V
GE
= 0 V, V
CE
= 1200 V, T
J
=
175°C
I
CES
−
−
−
−
0.2
2.8
mA
Gate leakage current, collector−emitter
short−circuited
V
GE
= 20 V, V
CE
= 0 V I
GES
− − 100 nA
DYNAMIC CHARACTERISTIC
Input capacitance
V
CE
= 20 V, V
GE
= 0 V, f = 1 MHz
C
ies
− 5320 −
pF
Output capacitance C
oes
− 124 −
Reverse transfer capacitance C
res
− 100 −
Gate charge total
V
CE
= 600 V, I
C
= 40 A, V
GE
= 15 V
Q
g
− 225 −
nC
Gate to emitter charge Q
ge
− 36 −
Gate to collector charge Q
gc
− 98 −
SWITCHING CHARACTERISTIC, INDUCTIVE LOAD
Turn−off delay time
T
J
= 25°C
V
CC
= 600 V, I
C
= 40 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
− 230 −
ns
Fall time t
f
− 120 −
Turn−off switching loss E
off
− 0.95 − mJ
Turn−off delay time
T
J
= 150°C
V
CC
= 600 V, I
C
= 40 A
R
g
= 10 W
V
GE
= 0 V/ 15V
t
d(off)
− 245 −
ns
Fall time t
f
− 180 −
Turn−off switching loss E
off
− 2.10 − mJ
DIODE CHARACTERISTIC
Forward voltage
V
GE
= 0 V, I
F
= 40 A
V
GE
= 0 V, I
F
= 40 A, T
J
= 175°C
V
F
−
−
2.10
3.30
2.60
−
V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
NGTB40N120IHRWG
http://onsemi.com
3
TYPICAL CHARACTERISTICS
Figure 1. Output Characteristics Figure 2. Output Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
543210
Figure 3. Output Characteristics Figure 4. Typical Transfer Characteristics
V
CE
, COLLECTOR−EMITTER VOLTAGE (V) V
GE
, GATE−EMITTER VOLTAGE (V)
131050
160
I
C
, COLLECTOR CURRENT (A)
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 15 V
T
J
= 25°C
10 V
9 V
8 V
7 V
543210
200
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 15 V
T
J
= 150°C
10 V
9 V
8 V
7 V
200
I
C
, COLLECTOR CURRENT (A)
V
GE
= 20 to 13 V
T
J
= −40°C
10 V
9 V
8 V
T
J
= 25°C
T
J
= 150°C
11 V
11 V
7 V
876
11 V
678
150
100
50
0
150
100
50
0
543210876
140
120
100
80
60
40
20
0
1234 67 89 1211
Figure 5. V
CE(sat)
vs. T
J
T
J
, JUNCTION TEMPERATURE (°C)
4.00
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
75500−25−50−75 200175100
I
C
= 80 A
I
C
= 40 A
I
C
= 20 A
25 125 150
Figure 6. Typical Capacitance
V
CE
, COLLECTOR−EMITTER VOLTAGE (V)
1007050100
10
100
1000
10,000
C, CAPACITANCE (pF)
C
ies
C
oes
C
res
20 30 40 60 9080
T
J
= 25°C
200
150
100
50
0
13 V
13 V
V
CE
= 20 V
250
250
250
3.50
3.00
2.50
2.00
1.50
1.00
0.50
0.00
P1-P3P4-P6P7-P9P10-P10

NGTB40N120IHRWG

Mfr. #:
Buy NGTB40N120IHRWG
Manufacturer:
ON Semiconductor
Description:
IGBT Transistors 1200V/40A RC IGBT FSII
Lifecycle:
New from this manufacturer.
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