DMN53D0U-7 Datasheet DMN53D0U-7, DMN53D0U-13 | P1-P3

DMN53D0U

Document number: DS37098 Rev. 2 - 2

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www.diodes.com

May 2014

DMN53D0U

NEW PRODUCT

N-CHANNEL ENHANCEMENT MODE FIELD EFFECT TRANSISTOR

Product Summary

(BR)DSS

DS(ON)

= +25°C

50V

2 @ V

= 5V

300 mA

2.5 @ V

= 2.5V

200 mA

Description and Applications

This MOSFET has been designed to minimize the on-state resistance

DS(ON)

) and yet maintain superior switching performance, making it

ideal for high efficiency power management applications.

Features and Benefits

• N-Channel MOSFET

• Low On-Resistance

• Very Low Gate Threshold Voltage

• Low Input Capacitance

• Fast Switching Speed

• Low Input/Output Leakage

• ESD Protected

• Totally Lead-Free & Fully RoHS Compliant (Notes 1 & 2)

• Halogen and Antimony Free. “Green” Device (Note 3)

• Qualified to AEC-Q101 Standards for High Reliability

Mechanical Data

• Case: SOT23

• Case Material: Molded Plastic, “Green” Molding Compound. UL

Flammability Classification Rating 94V-0

• Moisture Sensitivity: Level 1 per J-STD-020

• Terminals: Matte Tin Finish annealed over Alloy 42 leadframe

(Lead Free Plating). Solderable per MIL-STD-202, Method 208

• Terminal Connections: See Diagram

• Weight: 0.008 grams (approximate)

Ordering Information (Note 4)

Part Number Case Packaging

DMN53D0U-7 SOT23 3000/Tape & Reel

DMN53D0U-13 SOT23 10000/Tape & Reel

Notes: 1. No purposely added lead. Fully EU Directive 2002/95/EC (RoHS) & 2011/65/EU (RoHS 2) compliant.

2. See http://www.diodes.com/quality/lead_free.html for more information about Diodes Incorporated’s definitions of Halogen- and Antimony-free, "Green"

and Lead-free.

3. Halogen- and Antimony-free "Green” products are defined as those which contain <900ppm bromine, <900ppm chlorine (<1500ppm total Br + Cl) and

<1000ppm antimony compounds.

4. For packaging details, go to our website at http://www.diodes.com/products/packages.html.

Marking Information

Date Code Key

Year 2014 2015 2016 2017 2018 2019 2020

Code B C D E F G H

Month Jan Feb Mar Apr May Jun Jul Aug Sep Oct Nov Dec

Code 1 2 3 4 5 6 7 8 9 O N D

SOT23

Top View

ESD protected

53D = Product Type Marking Code

YM = Date Code Marking for SAT (Shanghai Assembly/ Test site)

= Date Code Marking for CAT (Chengdu Assembly/ Test site)

Y or = Year (ex: B = 2014)

M = Month (ex: 9 = September)

Shanghai A/T Site

Chengdu A/T Site

Top View

Equivalent Circuit

DMN53D0U

Document number: DS37098 Rev. 2 - 2

2 of 6

www.diodes.com

May 2014

DMN53D0U

NEW PRODUCT

Maximum Ratings (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Drain Source Voltage

DSS

50 V

Gate-Source Voltage Continuous

GSS

±12

Drain Current (Note 5) Continuous

Pulsed

300

500

Thermal Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Value Unit

Total Power Dissipation (Note 5)

520 mW

Thermal Resistance, Junction to Ambient (Note 5)

246

°C/W

Operating and Storage Temperature Range

, T

STG

-55 to +150

°C

Electrical Characteristics (@T

= +25°C, unless otherwise specified.)

Characteristic Symbol Min Typ Max Unit Test Condition

OFF CHARACTERISTICS (Note 6)

Drain-Source Breakdown Voltage

DSS

⎯ ⎯

= 0V, I

= 250µA

Zero Gate Voltage Drain Current

DSS

⎯ ⎯

1 µA

= 50V, V

= 0V

Gate-Body Leakage

GSS

⎯ ⎯

±10 µA

= ±12V, V

= 0V

ON CHARACTERISTICS (Note 6)

Gate Threshold Voltage

GS(th)

0.4

⎯

1.0 V

= V

, I

= 250µA

Static Drain-Source On-Resistance

DS(ON)

⎯

2.0

2.5

3.0

= 5.0V, I

= 50mA

= 2.5V, I

= 50mA

= 1.8V, I

= 50mA

Source-Drain Diode Forward Voltage

⎯ ⎯

1.4 V

= 0V, I

=115mA

DYNAMIC CHARACTERISTICS (Note 7)

Input Capacitance C

iss

⎯

37.1

⎯

= 25V, V

= 0V

f = 1.0MHz

Output Capacitance C

oss

⎯

8.4

⎯

Reverse Transfer Capacitance C

rss

⎯

4.0

⎯

Total Gate Charge Q

⎯

0.6

⎯

= 4.5V, V

= 10V,

= 250mA

Gate-Source Charge Q

⎯

0.1

⎯

Gate-Drain Charge Q

⎯

0.1

⎯

Turn-On Delay Time t

D(on)

⎯

2.1

⎯

= 30V, V

= 10V,

= 25, I

= 200mA

Turn-On Rise Time t

⎯

2.8

⎯

Turn-Off Delay Time t

D(off)

⎯

Turn-Off Fall Time t

⎯

Notes: 5. Device mounted on FR-4 substrate PC board, 2oz copper, with thermal vias to bottom layer 1inch square copper plate

6. Short duration pulse test used to minimize self-heating effect.

7. Guaranteed by design. Not subject to product testing.

DMN53D0U

Document number: DS37098 Rev. 2 - 2

3 of 6

www.diodes.com

May 2014

DMN53D0U

NEW PRODUCT

V , DRAIN-SOURCE VOLTAGE (V)

Figure 1 Typical Output Characteristics

I, D

AIN

(A)

0.0

0.5

1.0

1.5

2.0

V= 1.5V

V= 2.0V

V = 10V

V= 1.8V

V= 2.5V

V= 3.0V

V= 3.5V

V= 4.0V

V , GATE-SOURCE VOLTAGE (V)

Figure 2 Typical Transfer Characteristics

I, D

(A)

0.3

0.6

0.9

1.2

1.5

0 0.5 1 1.5 2 2.5 3 3.5 4

V= 5.0V

T = 150°C

T = 125°C

T = 85°C

T = 25°C

T = -55°C

I , DRAIN-SOURCE CURRENT (A)

Figure 3 Typical On-Resistance vs.

Drain Current and Gate Voltage

, D

AIN-S

N-

ESISTANCE ( )

DS(ON)

0.5

1.5

2.5

0.01 0.1 1 10

V = 1.8V

V = 2.5V

V= 5V

V , GATE-SOURCE VOLTAGE (V)

Figure 4 Typical Transfer Characteristics

, D

AIN-S

N-

ESIS

E ( )

DS(ON)

0 2 4 6 8 10 12 14 16 18 20

I= 50mA

I , DRAIN CURRENT (A)

Figure 5 Typical On-Resistance vs.

Drain Current and Temperature

R , DRAIN-S

URCE

N-RESISTANCE ( )

DS(ON)

0.5

1.5

2.5

0 0.3 0.6 0.9 1.2 1.5

T = -55°C

T = 25°C

T = 85°C

T = 125°C

T = 150°C

V = 4.5V

T , JUNCTION TEMPERATURE ( C)

Figure 6 On-Resistance Variation with Temperature

, D

AIN-S

ON-RESISTANCE (NORMALIZED)

DS(ON)

0.2

0.4

0.6

0.8

1.2

1.4

1.6

1.8

2.2

2.4

-50 -25 0 25 50 75 100 125 150

V=.5V

I = 100mA

V=V

I = 500mA

P1-P3 P4-P6

DMN53D0U-7

Mfr. #:

Buy DMN53D0U-7

Manufacturer:

Diodes Incorporated

Description:

MOSFET N-Ch 50Vds 12Vgs FET Enh Mode 50pF 1Vgs

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

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DMN53D0U-7

DMN53D0U-7

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