IXFR44N50P Datasheet IXFR44N50P | P1-P3

Symbol Test Conditions Maximum Ratings

V

DSS

T

J

= 25° C to 175° C 500 V

V

DGR

T

J

= 25° C to 175° C; R

GS

= 1 MΩ 500 V

V

GSM

Transient ±40 V

V

GSM

Continuous ±30 V

I

D25

T

C

= 25° C24A

I

DM

T

C

= 25° C, pulse width limited by T

JM

132 A

I

AR

T

C

= 25° C44A

E

AR

T

C

= 25° C55mJ

E

AS

T

C

= 25° C 1.7 J

dv/dt I

S

≤ I

DM

, di/dt ≤ 100 A/µs, V

DD

≤ V

DSS

, 10 V/ns

T

J

≤ 150° C, R

G

= 10 Ω

P

D

T

C

= 25° C 208 W

T

J

-55 ... +150 °C

T

JM

150 °C

T

stg

-55 ... +150 °C

T

L

1.6 mm (0.062 in.) from case for 10 s 300 °C

V

ISOL

50/60 Hz, RMS, 1 minute 2500 V~

F

C

Mounting Force 20..120 / 4.5..25 N/lb

Weight 5g

DS99319E(03/06)

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified) Min. Typ. Max.

BV

DSS

V

GS

= 0 V, I

D

= 250 µA 500 V

V

GS(th)

V

DS

= V

GS

, I

D

= 4 mA 2.5 5.0 V

I

GSS

V

GS

= ±30 V

DC

, V

DS

= 0 ±100 nA

I

DSS

V

DS

= V

DSS

25 µA

V

GS

= 0 V T

J

= 125° C 500 µA

R

DS(on)

V

GS

= 10 V, I

D

= 22 A 150 mΩ

N-Channel Enhancement

Avalanche Rated

Fast Intrinsic Diode

IXFR 44N50P V

DSS

= 500 V

I

D25

=24 A

R

DS(on)

≤≤

≤ 150 m

ΩΩ

Ω

t

rr

≤≤

≤ 200 ns

G = Gate D = Drain

S = Source

ISOLATED TAB

G

D

S

ISOPLUS247 (IXFR)

E153432

Features

l

International standard isolated

package

l

UL recognized package

l

Silicon chip on Direct-Copper-Bond

substrate

- High power dissipation

- Isolated mounting surface

- 2500V electrical isolation

l

Unclamped Inductive Switching (UIS)

rated

l

Low package inductance

- easy to drive and to protect

l

Fast intrinsic diode

Advantages

l

Easy to mount

l

Space savings

l

High power density

PolarHV

TM

HiPerFET

Power MOSFET

ISOPLUS247

TM

(Electrically Isolated Back Surface)

IXYS reserves the right to change limits, test conditions, and dimensions.

IXFR 44N50P

Symbol Test Conditions Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Min. Typ. Max.

g

fs

V

DS

= 20 V; I

D

= 22 A, Note 1 32 S

C

iss

5440 pF

C

oss

V

GS

= 0 V, V

DS

= 25 V, f = 1 MHz 639 pF

C

rss

40 pF

t

d(on)

25 ns

t

r

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 22 A 27 ns

t

d(off)

R

G

= 3 Ω (External) 70 ns

t

f

18 ns

Q

g(on)

98 nC

Q

gs

V

GS

= 10 V, V

DS

= 0.5 V

DSS

, I

D

= 22 A 35 nC

Q

gd

30 nC

R

thJC

0.6 ° C/W

R

thCS

0.15 ° C/W

Source-Drain Diode Characteristic Values

(T

J

= 25° C, unless otherwise specified)

Symbol Test Conditions Min. Typ. Max.

I

S

V

GS

= 0 V 30 A

I

SM

Repetitive 132 A

V

SD

I

F

= I

S

, V

GS

= 0 V, Note 1 1.5 V

t

rr

I

F

= 22 A, 200 ns

Q

RM

-di/dt = 100 A/µs 0.6 µC

I

RM

V

R

= 100V 6.0 A

ISOPLUS247 Outline

Notes: 1. Pulse test, t ≤ 300 ms, duty cycle d ≤ 2 %

IXYS MOSFETs and IGBTs are covered by 4,835,592 4,931,844 5,049,961 5,237,481 6,162,665 6,404,065 B1 6,683,344 6,727,585

one or moreof the following U.S. patents: 4,850,072 5,017,508 5,063,307 5,381,025 6,259,123 B1 6,534,343 6,710,405B2 6,759,692

4,881,106 5,034,796 5,187,117 5,486,715 6,306,728 B1 6,583,505 6,710,463 6,771,478 B2

IXFR 44N50P

Fig. 6. Drain Current vs. Case

Temperature

0

5

10

15

20

25

30

35

40

45

50

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

Fig. 1. Output Characteristics

@ 25ºC

0

5

10

15

20

25

30

35

40

45

01234567

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 2. Extended Output Characteristics

@ 25ºC

0

10

20

30

40

50

60

70

80

90

100

0 3 6 9 12 15 18 21 24 27 30

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

8V

7V

5V

6V

Fig. 3. Output Characteristics

@ 125ºC

0

5

10

15

20

25

30

35

40

45

0246810121416

V

DS

- Volts

I

D

- Amperes

V

GS

= 10V

7V

6V

5V

Fig. 4. R

DS(on)

Normalized to I

D

= 22A Value

vs. Junction Temperature

0.4

0.8

1.2

1.6

2

2.4

2.8

3.2

-50 -25 0 25 50 75 100 125 150

T

J

- Degrees Centigrade

R

DS(on)

- Normalized

V

GS

= 10V

I

D

= 44A

I

D

= 22A

Fig. 5. R

DS(on)

Normalized to I

D

= 22A Value

vs. Drain Current

0.8

1.0

1.2

1.4

1.6

1.8

2.0

2.2

2.4

2.6

2.8

3.0

3.2

0 102030405060708090100

I

D

- Amperes

R

DS(on)

- Normalized

V

GS

= 10V

T

J

= 125ºC

T

J

= 25ºC

Fig. 6. Maximum Drain Current vs.

Case Temperature

0

3

6

9

12

15

18

21

24

27

-50 -25 0 25 50 75 100 125 150

T

C

- Degrees Centigrade

I

D

- Amperes

IXFR44N50P

IXFR44N50P

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