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TN2540-600G-TR

P1-P3P4-P6P7-P9P10-P11
This is information on a product in full production.
August 2014 DocID7478 Rev 9 1/11
TN2540, TXN625, TYN625,
TYN825, TYN1225
Standard 25 A SCRs
Datasheet
-
production data
Features
• On-state rms current, I
T(RMS)
25 A
• Repetitive peak off-state voltage, V
DRM
/V
RRM
600 to 1200 V
• Triggering gate current, I
GT
40 mA
• Insulated package TO-220AB ins
– Insulating voltage 2500 V rms
– UL1557 certified (file ref. E81734)
Description
These standard 25 A SCRs are suitable for
general purpose applications.
Using clip assembly technology, they provide a
superior performance in surge current
capabilities.
TXN625RG is packaged in TO-220AB ins.
A
K
G
D²PAK
TO-220AB
TO-220AB Insulated
A
A
A
A
A
K
K
K
G
G
G
G
Table 1. Device summary
Order code
Voltage V
DRM
/V
RRM
Sensitivity
I
GT
Package
600 V 800 V 1200 V
TN2540-600G-TR Y 40 mA D
2
PAK
TN2540-800G-TR Y 40 mA D
2
PAK
TXN625RG Y 40 mA TO-220AB ins
TYN625RG Y 40 mA TO-220AB
TYN825RG Y 40 mA TO-220AB
TYN1225RG Y 40 mA TO-220AB
www.st.com
Characteristics TN2540, TXN625, TYN625, TYN825, TYN1225
2/11 DocID7478 Rev 9
1 Characteristics
Table 2. Absolute ratings (limiting values)
Symbol Parameter Value Unit
I
T(RMS)
On-state rms current (180 °Conduction angle)
TO-220AB,
D
2
PAK
T
c
= 100 °C
25 A
TO-220AB ins T
c
= 83 °C
I
T(AV)
Average on-state current (180 °Conduction angle) T
c
= 100 °C 16 A
I
TSM
Non repetitive surge peak on-state current
t
p
= 8.3 ms
T
j
= 25 °C
314
A
t
p
= 10 ms 300
I
2
tI
2
t Value for fusing t
p
= 10 ms T
j
= 25 °C 450 A
2
S
dI/dt
Critical rate of rise of on-state current
I
G
= 2 x I
GT
, t
r
≤ 100 ns
F = 60 Hz T
j
= 125 °C 50 A/µs
I
GM
Peak gate current t
p
= 20 µs T
j
= 125 °C 4 A
P
G(AV)
Average gate power dissipation T
j
= 125 °C 1 W
T
stg
T
j
Storage junction temperature range
Operating junction temperature range
- 40 to + 150
- 40 to + 125
°C
V
RGM
Maximum peak reverse gate voltage 5 V
Table 3. Electrical Characteristics (T
j
= 25 °C, unless otherwise specified)
Symbol Test conditions Value Unit
I
GT
V
D
= 12 V R
L
= 33 Ω
MIN. 4
mA
MAX. 40
V
GT
MAX. 1.3 V
V
GD
V
D
= V
DRM
R
L
= 3.3 kΩ T
j
= 125 °C MIN. 0.2 V
I
H
I
T
= 500 mA Gate open MAX. 50 mA
I
L
I
G
= 1.2 x I
GT
MAX. 90 mA
dV/dt V
D
= 67% V
DRM
Gate open T
j
= 125 °C MIN. 1500 V/µs
V
TM
I
TM
= 50 A tp = 380 µs T
j
= 25 °C MAX. 1.6 V
V
t0
Threshold voltage T
j
= 125 °C MAX. 0.77 V
R
d
Dynamic resistance T
j
= 125 °C MAX. 14 mΩ
I
DRM
I
RRM
V
DRM
= V
RRM
T
j
= 25 °C
MAX.
5µA
T
j
= 125 °C 4 mA
DocID7478 Rev 9 3/11
TN2540, TXN625, TYN625, TYN825, TYN1225 Characteristics
11
Table 4. Thermal resistances
Symbol Parameter Value Unit
R
th(j-c)
Junction to case (DC)
D
2
PAK, TO-220AB
1.0
°C/W
TO-220AB ins 2.0
R
th(j-a)
Junction to ambient (DC)
S
(1)
= 1 cm
2
D
2
PAK 45
°C/W
TO-220AB, TO-220AB ins 60
1. S = Copper surface under tab.
Figure 1. Maximum average power
dissipation versus average
on-state current
Figure 2. Average and DC on-state current
versus case temperature
P(W)
0
2
4
6
8
10
12
14
16
18
20
22
0246810121416
I (A)
T(AV)
360°
α
I(A)
T(AV)
0
2
4
6
8
10
12
14
16
18
20
22
24
26
28
0 25 50 75 100 125
D
2
PA K
TO-220AB
TO-220ABins
α = 180°
DC
T (°C)
case
Figure 3. Average and DC on-state current
versus ambient temperature
Figure 4. Relative variation of thermal
impedance versus pulse duration (D
2
PAK, and
TO-220AB)
I(A)
T(AV)
0,0
0,5
1,0
1,5
2,0
2,5
3,0
3,5
0 25 50 75 100 125
D
2
PA K
TO-220AB
TO-220ABins
DC
α = 180°
T (°C)
amb
1E-3 1E-2 1E-1 1E+0 1E+1 1E+2 5E+2
0.01
0.10
1.00
K=[Z /R
th th
]
t (s)
p
Z
th(j-c)
Z
th(j-a)
P1-P3P4-P6P7-P9P10-P11

TN2540-600G-TR

Mfr. #:
Buy TN2540-600G-TR
Manufacturer:
STMicroelectronics
Description:
SCRs 25 Amp 600 Volt
Lifecycle:
New from this manufacturer.
Delivery:
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