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STPSC16H065CT

P1-P3P4-P6P7-P8
This is information on a product in full production.
December 2015 DocID024810 Rev 5 1/8
STPSC16H065C
650 V power Schottky silicon carbide diode
Datasheet - production data
Features
No or negligible reverse recovery
Switching behavior independent of
temperature
High forward surge capability
ECOPACK
®
2 compliant component
Description
The SiC diode is an ultrahigh performance power
Schottky diode. It is manufactured using a silicon
carbide substrate. The wide band-gap material
allows the design of a Schottky diode structure
with a 650 V rating. Due to the Schottky
construction, no recovery is shown at turn-off and
ringing patterns are negligible. The minimized
capacitive charge at turn-off behavior is
independent of temperature.
Especially suited for use in interleaved or bridge-
less topologies, this dual-diode rectifier will boost
the performance in hard switching conditions. Its
high forward surge capability ensures a good
robustness during transient phases.
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Table 1. Device summary
Symbol Value
I
F(AV)
2 x 8 A
V
RRM
650 V
T
j
(max) 175 °C
www.st.com
Characteristics STPSC16H065C
2/8 DocID024810 Rev 5
1 Characteristics
When the diodes 1 and 2 are used simultaneously:
T
j
(diode 1) = P(diode1) x R
th(j-c)
(Per diode) + P(diode2) x R
th(c)
To evaluate the conduction losses use the following equation:
P = 1.35 x I
F(AV)
+ 0.144 x I
F
2
(RMS)
Table 2. Absolute ratings (limiting values per diode at 25 °C unless otherwise specified)
Symbol Parameter Value Unit
V
RRM
Repetitive peak reverse voltage 650
V
I
F(RMS)
Forward rms current 22
A
I
F(AV)
Average forward current
T
c
= 140 °C
(1)
, DC Per diode 8
A
T
c
= 135 °C
(2)
, DC Per device 16
A
I
FSM
Surge non repetitive forward current
t
p
= 10 ms sinusoidal, T
c
= 25 °C
t
p
= 10 ms sinusoidal, T
c
= 125 °C
t
p
= 10 µs square, T
c
= 25 °C
75
69
420
A
I
FRM
Repetitive peak forward current
T
c
= 140 °C
(1)
, T
j
= 175 °C, = 0.1
34
A
T
stg
Storage temperature range -65 to +175 °C
T
j
Operating junction temperature
(3)
-40 to +175 °C
1. Value based on R
th(j-c)
max (per diode)
2. Value based on R
th(j-c)
max (per device)
3. condition to avoid thermal runaway for a diode on its own heatsink
dPtot
dTj
---------------
1
Rth j a–
--------------------------
Table 3. Thermal resistance parameters
Symbol Parameter Typ. Max. Unit
R
th(j-c)
Junction to case
Per diode 1.3 1.6
°C/WPer device 0.8 0.95
R
th(c)
Coupling - 0.3
Table 4. Static electrical characteristics (per diode)
Symbol Parameter Tests conditions Min. Typ. Max. Unit
I
R
(1)
Reverse leakage current
T
j
= 25 °C
V
R
= V
RRM
-780
µA
T
j
= 150 °C - 65 335
V
F
(2)
Forward voltage drop
T
j
= 25 °C
I
F
= 8A
- 1.56 1.75
V
T
j
= 150 °C - 1.98 2.5
1. t
p
= 10 ms, < 2%
2. t
p
= 500 µs, < 2%
DocID024810 Rev 5 3/8
STPSC16H065C Characteristics
8
Table 5. Dynamic electrical characteristics (perdiode)
Symbol Parameter Test conditions Typ. Unit
Q
cj
(1)
Total capacitive charge V
R
= 400 V 23.5 nC
C
j
Total capacitance
V
R
= 0 V, T
c
= 25 °C, F = 1 MHz 414
pF
V
R
= 400 V, T
c
= 25 °C, F = 1 MHz 38
1. Most accurate value for the capacitive charge:
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Figure 1. Forward voltage drop versus forward
current (typical values, low level, per diode)
Figure 2. Forward voltage drop versus forward
current (typical values, high level, per diode)
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Figure 3. Reverse leakage current versus
reverse voltage applied (typical values, per
diode)
Figure 4. Peak forward current versus case
temperature (per diode)
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P1-P3P4-P6P7-P8

STPSC16H065CT

Mfr. #:
Buy STPSC16H065CT
Manufacturer:
STMicroelectronics
Description:
Schottky Diodes & Rectifiers 650V Pwr Schottky Silicn Carbide Diode
Lifecycle:
New from this manufacturer.
Delivery:
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