2N1893
SMALL SIGNAL NPN TRANSISTOR
■ GENERAL PURPOSE HIGH VOLTAGE
DEVICE
DESCRIPTION
The 2N1893 is a Silicon Planar Epitaxial NPN
transistor in Jedec TO-39 metal case, designed
for use in high-performance amplifier, oscillator
and switching circuits. It provides greater voltage
swings in oscillator and amplifier circuits and
more protection in inductive switching circuits due
to its 120 V collector-to-base voltage rating.
®
INTERNAL SCHEMATIC DIAGRAM
January 2003
ABSOLUTE MAXIMUM RATINGS
Symbol Parameter Value Unit
V
CBO
Collector-Base Voltage (I
E
= 0) 120 V
V
CER
Collector-Emitter Voltage (R
BE
≤ 10Ω)
100 V
V
CEO
Collector-Emitter Voltage (I
B
= 0) 80 V
V
EBO
Emitter-Base Voltage (I
C
= 0) 7 V
I
C
Collector Current 0.5 A
P
tot
Total Dissipation at T
amb
≤ 25
o
C
at T
C
≤ 25
o
C
at T
C
≤ 100
o
C
0.8
3
1.7
W
W
W
T
stg
Storage Temperature -65 to 175
o
C
T
j
Max. Operating Junction Temperature 175
o
C
TO-39
1/5
