V1PL45
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Vishay General Semiconductor
Revision: 24-Feb-17
1
Document Number: 87642
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, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Surface Mount Trench MOS Barrier Schottky Rectifier
FEATURES
• Very low profile - typical height of 0.65 mm
• Ideal for automated placement
• Trench MOS Schottky technology
• Low forward voltage drop
• Low power loss, high efficiency
• Meets MSL level 1, per J-STD-020,
LF maximum peak of 260 °C
• AEC-Q101 qualified available
- Automotive ordering code: base P/NHM3
• Material categorization: for definitions of compliance
please see www.vishay.com/doc?99912
TYPICAL APPLICATIONS
For use in low voltage high frequency inverters,
freewheeling, DC/DC converters, and polarity protection
applications, in commercial, industrial, and automotive
applications.
MECHANICAL DATA
Case: MicroSMP
Molding compound meets UL 94 V-0 flammability rating
Base P/N-M3 - halogen-free, and RoHS-compliant
Base P/NHM3 - halogen-free, RoHS-compliant, and
AEC-Q101 qualified
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
M3 and HM3 suffix meets JESD 201 class 2 whisker test
Polarity: Color band denotes the cathode end
Note
(1)
The heat generated must be less than the thermal conductivity from junction to ambient: dP
D
/dT
J
< 1/R
θJA
PRIMARY CHARACTERISTICS
I
F(AV)
1.0 A
V
RRM
45 V
I
FSM
25 A
V
F
at I
F
= 1.0 A (125 °C) 0.36 V
T
J
max. 150 °C
Package MicroSMP
Diode variations Single
MicroSMP
eSMP
®
Series
Top View
Bottom View
Available
MAXIMUM RATINGS (T
A
= 25 °C unless otherwise noted)
PARAMETER SYMBOL V1PL45 UNIT
Device marking code 1LE
Maximum repetitive peak reverse voltage V
RRM
45 V
Maximum DC forward current I
F(AV)
1.0
A
Peak forward surge current 10 ms single half sine-wave
superimposed on rated load
I
FSM
25
Operating junction and storage temperature range T
J
(1)
, T
STG
-40 to +150 °C