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BAQ333-TR3

P1-P3P4-P4
BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 01-Aug-12
1
Document Number: 85538
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Small Signal Switching Diodes, Low Leakage Current
MECHANICAL DATA
Case: MicroMELF
Weight: approx. 12 mg
Cathode band color: black
Packaging codes/options:
TR3/10K per 13" reel (8 mm tape), 10K/box
TR/2.5K per 7" reel (8 mm tape), 12.5K/box
FEATURES
• Silicon planar diodes
• Saving space
• Hermetic sealed parts
• Fits onto SOD-323/SOT-23 footprints
• Electrical data identical with the devices BAQ33
to BAQ35, BAQ133 to BAQ135
• Very low reverse current
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
APPLICATIONS
• Protection circuits, time delay circuits, peak follower
circuits, logarithmic amplifiers
PARTS TABLE
PART TYPE DIFFERENTIATION ORDERING CODE INTERNAL CONSTRUCTION REMARKS
BAQ333 V
RRM
= 40 V BAQ333-TR3 or BAQ333-TR Single diode Tape and reel
BAQ334 V
RRM
= 70 V BAQ334-TR3 or BAQ334-TR Single diode Tape and reel
BAQ335 V
RRM
= 140 V BAQ335-TR3 or BAQ335-TR Single diode Tape and reel
ABSOLUTE MAXIMUM RATINGS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL VALUE UNIT
Repetitive peak reverse voltage
BAQ333 V
RRM
40 V
BAQ334 V
RRM
70 V
BAQ335 V
RRM
140 V
Reverse voltage
BAQ333 V
R
30 V
BAQ334 V
R
60 V
BAQ335 V
R
125 V
Peak forward surge current t
p
= 1 μs I
FSM
2A
Forward continuous current I
F
200 mA
THERMAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION SYMBOL VALUE UNIT
Thermal resistance junction to ambient air
Mounted on epoxy-glass
hard tissue, fig. 3
35 μm copper clad, 0.9 mm
2
copper area per electrode
R
thJA
500 K/W
Junction temperature T
j
175 °C
Storage temperature range T
stg
- 65 to + 175 °C
BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 01-Aug-12
2
Document Number: 85538
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
TYPICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
Fig. 1 - Reverse Current vs. Junction Temperature
Fig. 2 - Forward Current vs. Forward Voltage
Fig. 3 - Board for R
thJA
Definition (in mm)
ELECTRICAL CHARACTERISTICS (T
amb
= 25 °C, unless otherwise specified)
PARAMETER TEST CONDITION PART SYMBOL MIN. TYP. MAX. UNIT
Forward voltage I
F
= 100 mA V
F
1V
Reverse current
E 300 lx, rated V
R
I
R
13nA
E 300 lx, rated V
R
, T
j
= 125 °C I
R
0.5 μA
E 300 lx, V
R
= 15 V BAQ333 I
R
0.5 1 nA
E 300 lx, V
R
= 30 V BAQ334 I
R
0.5 1 nA
E 300 lx, V
R
= 60 V BAQ335 I
R
0.5 1 nA
Breakdown voltage
I
R
= 5 μA, t
p
/T = 0.01,
t
p
= 0.3 ms
BAQ333 V
(BR)
40 V
BAQ334 V
(BR)
70 V
BAQ335 V
(BR)
140 V
Diode capacitance V
R
= 0 V, f = 1 MHz C
D
3pF
04 08 0 120 160
1
10
100
1000
10 000
I- Reverse
C
urrent (nA)
R
T
j
- Junction Temperature (°C)
200
94 9079
Scattering Limit
V
R
=V
RRM
0 0.4 0.8 1.2 1.6
0.1
1
10
100
1000
I- Forward Current (mA)
F
V
F
- Forward Voltage (V)
2.0
94 9078
Scattering Limit
T
j
=2 5 °C
25
2.5
10
0.71 1.3
1.27
9.9
24
0.152
0.355
95 10329
BAQ333, BAQ334, BAQ335
www.vishay.com
Vishay Semiconductors
Rev. 2.1, 01-Aug-12
3
Document Number: 85538
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
PACKAGE DIMENSIONS in millimeters (inches): MicroMELF
Cathode indification
surface plan1 (0.039)
glass
glass
surface plan
2 (0.079)
1.8 (0.071)
0.25 (0.010)
0.15 (0.006)
1.2 (0.047)
1.1 (0.043)
> R2.5 (0.098)
< 1.35 (0.053)
0.6 (0.024
)
Foot print recommendation:
Reflow soldering Wave soldering
2.4 (0.094) 2.8 (0.110)
0.8 (0.031)0.8 (0.031) 0.9 (0.035) 0.9 (0.035)
1.2 (0.047)
0.8 (0.031)
1.4 (0.055)
1 (0.039)
Document no.:6.560-5007.01-4
Rev. 13 - Date: 07.June.2006
96 12072
Created - Date: 26.July.1996
*
*
The gap between plug and glass can
be either on cathode or anode side
P1-P3P4-P4

BAQ333-TR3

Mfr. #:
Buy BAQ333-TR3
Manufacturer:
Vishay Semiconductors
Description:
Diodes - General Purpose, Power, Switching 40 Volt 200mA 2.0 Amp IFSM
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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