QS5U17
Transistors
Rev.B 3/4
zElectrical characteristic curves
<MOSFET>
0.0 0.5 1.0 1.5 2.0 2.5
GATE-SOURCE VOLTAGE : V
GS
(V)
0.001
0.01
0.1
1
10
DRAIN CURRENT : I
D
(A)
Fig.1
Typical Transfer Characteristics
V
DS
=10V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.2 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=4.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.1 1 10
10
100
1000
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.3 Static Drain-Source On-State
Resistance vs. Drain Current
V
GS
=4.0V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
Fig.4 Static Drain-Source On-State
Resistance vs. Drain Current
DRAIN CURRENT : I
D
(A)
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
0.1 1 10
10
100
1000
V
GS
=2.5V
Pulsed
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
012345678910
GATE-SOURCE VOLTAGE : V
GS
(V)
0
100
200
300
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.5 Static Drain-Source
On-State Resistance vs.
Gate-Source Voltage
Ta=25°C
Pulsed
I
D
=2A
I
D
=1A
0.1 1 10
DRAIN CURRENT : I
D
(A)
10
100
1000
STATIC DRAIN-SOURCE
ON-STATE RESISTANCE :
R
DS (on)
(mΩ)
Fig.6 Static Drain-Source On-State
Resistance vs. Drain Current
Ta=25°C
Pulsed
V
GS
=2.5V
V
GS
=4V
V
GS
=4.5V
0.0 0.5 1.0 1.5
SOURCE-DRAIN VOLTAGE : V
SD
(V)
0.01
0.1
1
10
SOURCE CURRENT : I
S
(A)
V
GS
=0V
Pulsed
Fig.7 Reverse Drain Current
vs. Source-Drain Current
Ta= −25°C
Ta=25°C
Ta=75°C
Ta=125°C
0.01 0.1 1 10 100
DRAIN-SOURCE VOLTAGE : V
DS
(V)
CAPACITANCE : C
(pF)
100
1000
10
Ta=25°C
f=1MHz
V
GS
=0V
Fig.8 Typical Capacitance
vs. Drain-Source Voltage
C
iss
C
oss
C
rss
0.01 0.1 1 10
DRAIN CURRENT : I
D
(A)
1
10
100
1000
SWITCHING TIME : t
(ns)
Fig.9 Switching Characteristics
t
d (off)
t
d (on)
t
r
t
f
Ta=25°C
V
DD
=15V
V
GS
=4.5V
R
G
=10Ω
Pulsed
