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ADA-4643-TR2G

P1-P3P4-P6P7-P9P10-P12
ADA-4643
Silicon Bipolar Darlington Ampli er
Data Sheet
Attention: Observe precautions for
handling electrostatic sensitive devices.
ESD Machine Model (Class A)
ESD Human Body Mode (Class 1B)
Refer to Avago Application Note A004R:
Electrostatic Discharge, Damage and Control.
RFin
2Tx
GND
RFout
& Vd
GND
Description
Avago Technologies’ ADA-4643 is an economical, easy-to-
use, general purpose silicon bipolar RFIC gain block am-
pli ers housed in a 4-lead SC-70 (SOT-343) surface mount
plastic package which requires only half the board space
of a SOT-143 package.
The Darlington feedback structure provides inherent
broad bandwidth performance, resulting in useful ope-
rating frequency up to 2.5 GHz. This is an ideal device for
small-signal gain cascades or IF ampli cation.
ADA-4643 is fabricated using Avago’s HP25 silicon bipolar
process, which employs a double-di used single poly-
silicon process with self-aligned submicron emitter
geometry. The process is capable of simultaneous high f
T
and high NPN breakdown (25 GHz f
T
at 6 V BVCEO). The
process utilizes industry standard device oxide isolation
technologies and submicron aluminum multilayer inter-
connect to achieve superior performance, high uniformity,
and proven reliability.
Surface Mount Package
SOT-343
Pin Connections and Package Marking
Note:
Top View. Package marking provides orientation and identi cation.
“2T” = Device Code
“x” = Date code character identi es month of manufacture.
C
block
C
block
C
bypass
R
c
V
CC
= 5 V
V
d
= 3.5 V
RFC
RF
input
RF
output
2Tx
R
c
=
V
cc
– V
d
I
d
Features
 Small Signal gain ampli er
 Operating frequency DC – 2.5 GHz
 Unconditionally stable
 50 Ohms input & output
 Flat, Broadband Frequency Response up to 1 GHz
 Operating Current: 20 to 60 mA
 Industry standard SOT-343 package
 Lead-free option available
Speci cations
900 MHz, 3.5 V, 35 mA (typ.)
 17 dB associated gain
 13.4 dBm P
1dB
 28.3 dBm OIP
3
 4 dB noise  gure
 VSWR < 2.2 throughput operating frequency
 Single supply, typical I
d
= 35 mA
Applications
 Cellular/PCS/WLL base stations
 Wireless data/WLAN
 Fiber-optic systems
 ISM
Typical Biasing Con guration
2
ADA-4643 Electrical Speci cations
T
A
= 25° C, Zo = 50 , Pin = -25 dBm, I
d
= 35 mA (unless speci ed otherwise)
Symbol
Parameter and Test Condition:
I
d
= 35 mA, Zo = 50 Frequency Units Min. Typ. Max. Std. Dev.
V
d
Device Voltage I
d
= 35 mA V 3.2 3.5 3.9
Gp Power Gain (|S
21
|)
2
100 MHz
900 MHz
[1,2]
dB
15.5
17.5
17.0 18.5
Gp
Gain Flatness 100 to 900 MHz
0.1 to 2 GHz
dB 0.5
1.8
F
3dB
3 dB Bandwidth GHz 3.2
VSWR
in
Input Voltage Standing Wave Ratio 0.1 to 6 GHz 2.0:1
VSWR
out
Output Voltage Standing Wave Ratio 0.1 to 6 GHz 1.6:1
NF
50 Noise Figure
100 MHz
900 MHz
[1,2]
dB 3.9
4.0
0.07
0.1
P
1dB
Output Power at 1dB Gain Compression 100 MHz
900 MHz
[1,2]
dBm 14.7
13.4
OIP
3
Output 3
rd
Order Intercept Point 100 MHz
[3]
900 MHz
[1,2]
dBm 29.0
28.3
DV/dT Device Voltage Temperature Coe cient mV/°C -5.3
Notes:
1. Typical value determined from a sample size of 500 parts from 3 wafers.
2. Measurement obtained using production test board described in the block diagram below.
3. I) 900 MHz OIP
3
test condition: F1 = 900 MHz, F2 = 905 MHz and Pin = -25 dBm per tone.
II) 100 MHz OIP
3
test condition: F1 = 100 MHz, F2 = 105 MHz and Pin = -25 dBm per tone.
ADA-4643 Absolute Maximum Ratings
[1]
Symbol Parameter Units
Absolute
Maximum
I
d
Device Current mA 70
P
diss
Total Power Dissipation
[2]
mW 270
P
in max.
RF Input Power dBm 18
T
j
Channel Temperature
C
150
T
STG
Storage Temperature
C
-65 to 150
jc
Thermal Resistance
[3]
C/W
152
Notes:
1. Operation of this device above any one of these parameters may cause permanent damage.
2. Ground lead temperature is 25° C. Derate 6.6 mW/°C for TL >109° C.
3. Junction-to-case thermal resistance measured using 150° C Liquid Crystal Measurement method.
Block diagram of 900 MHz production test board used for V
d
, Gain, P
1dB
, OIP
3
, and NF measurements.
Circuit losses have been de-embedded from actual measurements.
Input
50 Ohm
Transmission
(0.5 dB loss)
DUT
50 Ohm
Transmission
including Bias
(0.5 dB loss)
Output
3
Product Consistency Distribution Charts at 900 MHz, I
d
= 35 mA
GAIN (dB)
15 1916 17 18
300
250
200
150
100
50
0
V
d
(V)
343.2 3.4 3.6 3.8
300
250
200
150
100
50
0
Figure 1. Gain distribution @ 35 mA. LSL = 15.5, Nominal = 17, USL = 18.5 Figure 2. V
d
distribution @ 35 mA. LSL = 3.2, Nominal = 3.5, USL = 3.9
Notes:
1. Statistics distribution determined from a sample size of 500 parts taken from 3 di erent wafers.
2. Future wafers allocated to this product may have typical values anywhere between the minimum and maximum speci cation limits.
P1-P3P4-P6P7-P9P10-P12

ADA-4643-TR2G

Mfr. #:
Buy ADA-4643-TR2G
Manufacturer:
Broadcom / Avago
Description:
IC RF AMP ISM 0HZ-2.5GHZ SOT343
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
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