SI2335DS-T1-GE3 Datasheet SI2335DS-T1-GE3, SI2335DS-T1-E3 | P1-P3

Vishay Siliconix

Si2335DS

Document Number: 71314

S09-0130-Rev. B, 02-Feb-09

www.vishay.com

1

P-Channel 12-V (D-S) MOSFET

FEATURES

•

Halogen-free According to IEC 61249-2-21

Available

• TrenchFET

®

Power MOSFETs: 1.8 V Rated

Notes:

a. Surface mounted on 1" x 1" FR4 board.

b. Pulse width limited by maximum junction temperature.

PRODUCT SUMMARY

V

DS

(V) R

DS(on)

(Ω)I

D

(A)

- 12

0.051 at V

GS

= - 4.5 V

- 4.0

0.070 at V

GS

= - 2.5 V

- 3.5

0.106 at V

GS

= - 1.8 V

- 3.0

G

S

D

Top V i ew

2

3

TO-236

(SOT-23)

1

Si2335DS (E5)*

*Marking Code

Ordering Information: Si2335DS-T1-E3 (Lead (Pb)-free)

Si2335DS-T1-GE3 (Lead (Pb)-free and Halogen-free)

ABSOLUTE MAXIMUM RATINGS T

A

= 25 °C, unless otherwise noted

Parameter Symbol 5 s Steady State Unit

Drain-Source Voltage

V

DS

- 12

V

Gate-Source Voltage

V

GS

± 8

Continuous Drain Current (T

J

= 150 °C)

a, b

T

A

= 25 °C

I

D

- 4.0 - 3.2

A

T

A

= 70 °C

- 3.3 - 2.6

Pulsed Drain Current

I

DM

- 15

Continuous Source Current (Diode Conduction)

a, b

I

S

- 1.6

Maximum Power Dissipation

a, b

T

A

= 25 °C

P

D

1.25 0.75

W

T

A

= 70 °C

0.8 0.48

Operating Junction and Storage Temperature Range

T

J

, T

stg

- 55 to 150 °C

THERMAL RESISTANCE RATINGS

Parameter Symbol Typical Maximum Unit

Maximum Junction-to-Ambient

a

t ≤ 5 s

R

thJA

75 100

°C/W

Steady State 120 166

Maximum Junction-to-Foot (Drain) Steady State

R

thJF

40 50

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Document Number: 71314

S09-0130-Rev. B, 02-Feb-09

Vishay Siliconix

Si2335DS

Notes:

a. Pulse test: PW ≤ 300 µs, duty cycle ≤ 2 %.

b. For design aid only, not subject to production testing.

c. Switching time is essentially independent of operating temperature.

Stresses beyond those listed under “Absolute Maximum Ratings” may cause permanent damage to the device. These are stress ratings only, and functional operation

of the device at these or any other conditions beyond those indicated in the operational sections of the specifications is not implied. Exposure to absolute maximum

rating conditions for extended periods may affect device reliability.

SPECIFICATIONS T

J

= 25 °C, unless otherwise noted

Parameter Symbol Test Conditions

Limits

Unit Min. Typ. Max.

Static

Drain-Source Breakdown Voltage

V

DS

V

GS

= 0 V, I

D

= - 10 µA

- 12

V

Gate-Threshold Voltage

V

GS(th)

V

DS

= V

GS

, I

D

= - 250 µA

- 0.45

Gate-Body Leakage

I

GSS

V

DS

= 0 V, V

GS

= ± 8 V

± 100 nA

Zero Gate Voltage Drain Current

I

DSS

V

DS

= - 9.6 V, V

GS

= 0 V

- 1

µA

V

DS

= - 9.6 V, V

GS

= 0 V, T

J

= 55 °C

- 10

On-State Drain Current

a

I

D(on)

V

DS

≤ - 5 V, V

GS

= - 4.5 V

- 15

A

V

DS

≤ - 5 V, V

GS

= - 2.5 V

- 6

Drain-Source On-Resistance

a

R

DS(on)

V

GS

= - 4.5 V, I

D

= - 4.0 A

0.042 0.051

Ω

V

GS

= - 2.5 V, I

D

= - 3.5 A

0.058 0.070

V

GS

= - 1.8 V, I

D

= - 2.0 A

0.082 0.106

Forward Transconductance

a

g

fs

V

DS

= - 5 V, I

D

= - 4.0 A

7S

Diode Forward Voltage

V

SD

I

S

= - 1.6 A, V

GS

= 0 V

- 1.2 V

Dynamic

b

Total Gate Charge

Q

g

V

DS

= - 6 V, V

GS

= - 4.5 V, I

D

≅ - 4.0 A

915

nCGate-Source Charge

Q

gs

1.9

Gate-Drain Charge

Q

gd

1.5

Input Capacitance

C

iss

V

DS

= - 6 V, V

GS

= 0 V, f = 1 MHz

1225

pFOutput Capacitance

C

oss

260

Reverse Transfer Capacitance

C

rss

130

Switching

c

Tur n - O n T i m e

t

d(on)

V

DD

= - 6 V, R

L

= 6 Ω

I

D

≅ - 1.0 A, V

GEN

= - 4.5 V, R

G

= 6 Ω

13.0 20

ns

t

r

15 25

Turn-Off Time

t

d(off)

50 70

t

f

19 35

Document Number: 71314

S09-0130-Rev. B, 02-Feb-09

www.vishay.com

3

Vishay Siliconix

Si2335DS

TYPICAL CHARACTERISTICS 25 °C, unless otherwise noted

Output Characteristics

On-Resistance vs. Drain Current

Gate Charge

0

3

6

9

12

15

0246810

V

GS

= 4.5 V thru 2.5 V

1 V, 0.5 V

1.5 V

V

DS

- Drain-to-Source Voltage (V)

- Drain Current (A)I

D

2 V

0.00

0.05

0.10

0.15

0.20

0.25

0.30

03691215

V

GS

= 4.5 V

V

GS

= 2.5 V

I

D

- Drain Current (A)

V

GS

= 1.8 V

- On-Resistance (Ω)R

DS(on)

0

2

4

6

8

0 5 10 15 20

V

DS

= 6 V

I

D

= 4.0 A

- Gate-to-Source Voltage (V)

Q

g

- Total Gate Charge (nC)

V

GS

Transfer Characteristics

Capacitance

On-Resistance vs. Junction Temperature

0

3

6

9

12

15

0.0 0.5 1.0 1.5 2.0 2.5

125 °C

V

GS

- Gate-to-Source Voltage (V)

- Drain Current (A)I

D

T

C

= - 55 °C

25 °C

C

rss

C

oss

C

iss

V

DS

- Drain-to-Source Voltage (V)

C - Capacitance (pF)

0

500

1000

1500

2000

036912

0.6

0.8

1.0

1.2

1.4

1.6

- 50 - 25 0 25 50 75 100 125 150

V

GS

= 4.5 V

I

D

= 4.0 A

T

J

- Junction Temperature (°C)

(Normalized)

- On-Resistance R

DS(on)

SI2335DS-T1-GE3

SI2335DS-T1-GE3

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