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IXFK180N15P

P1-P3P4-P5
IXYS reserves the right to change limits, test conditions, and dimensions.
IXFK 180N15P
IXFX 180N15P
Fig. 11. Capacitance
100
1,000
10,000
100,000
0 5 10 15 20 25 30 35 40
V
DS
- Volts
Capacitance - picoFarads
C
is
C
os
C
rs
f = 1MHz
Fig. 10. Gate Charge
0
1
2
3
4
5
6
7
8
9
10
0 25 50 75 100 125 150 175 200 225 250
Q
G
- nanoCoulombs
V
G S
- Volts
V
DS
= 75V
I
D
= 90A
I
G
= 10mA
Fig. 7. Input Admittance
0
25
50
75
100
125
150
175
200
225
250
4 4.5 5 5.5 6 6.5 7 7.5 8 8.5 9
V
G S
- Volts
I
D
- Amperes
T
J
= 150
º
C
25
º
C
-40
º
C
Fig. 8. Transconductance
0
20
40
60
80
100
120
0 25 50 75 100 125 150 175 200 225 250
I
D
- Amperes
g
f s
- Siemens
T
J
= -40
º
C
25
º
C
150
º
C
Fig. 9. Source Current vs.
Source-To-Drain Voltage
0
50
100
150
200
250
300
350
0.30.50.70.91.11.31.5
V
S D
- Volts
I
S
- Amperes
T
J
= 150
º
C
T
J
= 25
º
C
Fig. 12. Forw ard-Bias
Safe Operating Area
10
100
1000
1 10 100 1000
V
D S
- Volts
I
D
- Amperes
100µs
1ms
DC
T
J
= 175
º
C
T
C
= 25
º
C
R
DS(on)
Limit
10ms
25µs
© 2006 IXYS All rights reserved
Fig. 13. M axim um Trans ie nt The rm al Res istance
0.00
0.01
0.10
1.00
0.1 1 10 100 1000
Pulse W idth - milliseconds
R
( t h ) J C
-
ºC / W
IXFK 180N15P
IXFX 180N15P
P1-P3P4-P5

IXFK180N15P

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Description:
MOSFET N-CH 150V 180A TO-264
Lifecycle:
New from this manufacturer.
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