NCV8408BDTRKG

© Semiconductor Components Industries, LLC, 2016
November, 2016 − Rev. 6
1 Publication Order Number:
NCV8408/D
NCV8408, NCV8408B
Self-Protected Low Side
Driver with Temperature
and Current Limit
42 V, 10 A, Single N−Channel, DPAK
NCV8408/B is a single channel protected Low-Side Smart Discrete
device. The protection features include overcurrent, overtemperature,
ESD and integrated Drain-to-Gate clamping for overvoltage protection.
Thermal protection includes a latch which can be reset by toggling the
input. This device is suitable for harsh automotive environments.
Features
Short Circuit Protection
Thermal Shutdown with Latched Reset
Gate Input Current Flag During Latched Fault Condition
Overvoltage Protection
Integrated Clamp for Inductive Switching
ESD Protection
dV/dt Robustness
Analog Drive Capability (Logic Level Input)
NCV Prefix for Automotive and Other Applications Requiring
Unique Site and Control Change Requirements; AEC−Q100
Qualified and PPAP Capable
These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Typical Applications
Switch a Variety of Resistive, Inductive and Capacitive Loads
Can Replace Electromechanical Relays and Discrete Circuits
Automotive / Industrial
Drain (2,4)
Source (3)
Temperature
Limit
Gate
Input (1)
Current
Limit
Current
Sense
Overvoltage
Protection
ESD Protection
www.onsemi.com
V
DSS
(Clamped)
R
DS(on)
TYP
I
D
MAX
(Limited)
42 V
55 mW @ 5 V
10 A
MARKING
DIAGRAM
Y = Year
WW = Work Week
xxxxx = V8408 or 8408B
G = Pb−Free Package
1
2
3
4
DPAK
CASE 369C
STYLE 2
YWW
xxxxxG
Device Package Shipping
ORDERING INFORMATION
For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
NCV8408DTRKG DPAK
(Pb−Free)
2500/Tape & Ree
l
Source
Drain
Gate
Drain
NCV8408BDTRKG DPAK
(Pb−Free)
2500/Tape & Ree
l
NCV8408, NCV8408B
www.onsemi.com
2
MAXIMUM RATINGS (T
J
= 25°C unless otherwise noted)
Rating
Symbol Value Unit
Drain−to−Source Voltage Internally Clamped V
DSS
42 Vdc
Drain−to−Gate Voltage Internally Clamped (R
GS
= 1.0 MW)
V
DGR
42 V
Gate−to−Source Voltage V
GS
±14 Vdc
Continuous Drain Current I
D
Internally Limited
Gate Input Current (V
GS
= ±14 V
DC
) I
GS
±10 mA
Source to Drain Current I
SD
4.0 A
Total Power Dissipation
@ T
A
= 25°C (Note 1)
@ T
A
= 25°C (Note 2)
P
D
1.8
2.3
W
Thermal Resistance
Junction−to−Ambient Steady State (Note 1)
Junction−to−Ambient Steady State (Note 2)
Junction−to−Tab Steady State (Note 3)
R
q
JA
R
q
JA
R
q
JT
70
55
2.1
°C/W
Single Pulse Inductive Load Switching Energy
(V
DD
= 20 Vdc, V
GS
= 5.0 V, I
L
= 8.0 A)
Repetitive Pulse Inductive Load Switching Energy
(V
DD
= 20 Vdc, V
GS
= 5.0 V, I
L
= 8.0 A, T
J
= 25°C)
Repetitive Pulse Inductive Load Switching Energy
(V
DD
= 20 Vdc, V
GS
= 5.0 V, I
L
= 6.8 A, T
J
= 105°C)
E
AS
E
AR
E
AR
185
128
92
mJ
Load Dump Voltage (V
GS
= 0 and 10 V, R
I
= 2.0 W, R
L
= 4.5 W, t
d
= 400 ms, T
J
= 25°C)
V
LD
63 V
Operating Junction Temperature T
J
−40 to 150 °C
Storage Temperature T
stg
−55 to 150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the device. If any of these limits are exceeded, device functionality
should not be assumed, damage may occur and reliability may be affected.
1. Surface−mounted onto minimum pad FR4 PCB (1 oz Cu, 0.06” thick).
2. Surfacemounted onto 2 square FR4 PCB, (1 square, 1 oz Cu, 0.06” thick).
3. Surface−mounted onto minimum pad FR4 PCB (2 oz Cu, 0.06” thick).
DRAIN
SOURCE
GATE
VDS
VGS
I
D
I
G
+
+
Figure 1. Voltage and Current Convention
I
S
NCV8408, NCV8408B
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Characteristic
Test Conditions Symbol Min Typ Max Unit
OFF CHARACTERISTICS
Drain−to−Source Clamped Breakdown Voltage (Note 4)
(V
GS
= 0 V, I
D
= 10 mA, T
J
= 25°C)
(V
GS
= 0 V, I
D
= 10 mA, T
J
= 150°C) (Note 6)
(V
GS
= 0 V, I
D
= 10 mA, T
J
= −40°C) (Note 6)
V
(BR)DSS
42
40
43
46
45
47
51
51
51
V
Zero Gate Voltage Drain Current
(V
GS
= 0 V, V
DS
= 32 V, T
J
= 25°C)
(V
GS
= 0 V, V
DS
= 32 V, T
J
= 150°C) (Note 6)
I
DSS
0.6
2.5
5.0
10
mA
INPUT CHARACTERISTICS (Note 4)
Gate Input Current − Normal Operation
(V
GS
= 5.0 V) I
GSSF
25 50
mA
Gate Input Current − Protection Latched (V
GS
= 5.0 V) (Note 6) I
GSSL
440
mA
Gate Threshold Voltage (V
GS
= V
DS
, I
D
= 1 mA) V
GS(th)
1.0 1.7 2.2 V
Gate Threshold Temperature Coefficient V
GS(th)
/T
J
5.0 −mV/°C
Latched Reset Voltage (Note 6) V
LR
0.8 1.4 1.9 V
Latched Reset Time (V
GS
= 5.0 V to V
GS
< 1 V) (Note 6) t
LR
10 40 100
ms
Internal Gate Input Resistance 25.5
kW
ON CHARACTERISTICS (Note 4)
Static Drain−to−Source On−Resistance
(V
GS
= 5.0 V, I
D
= 3.0 A, T
J
@ 25°C)
(V
GS
= 5.0 V, I
D
= 3.0 A, T
J
@ 150°C) (Note 6)
R
DS(on)
55
100
60
120
mW
Source−Drain Forward On Voltage (V
GS
= 0 V, I
S
= 7.0 A) V
SD
0.95 V
SWITCHING CHARACTERISTICS (Note 6)
Turn−OFF/ON Slew Rate Matching
V
GS
= 5.0 V, V
DS
= 13 V, R
L
= 4 W;
T
J
= −40°C
T
J
= 150°C
T
J
= 25°C
−40°C < T
J
< 150°C
T
Match
−15
−15
−5
−20
15
15
5
20
%
Turn−ON Delay Time
V
GS
= 5 V, V
DS
= 13 V
R
L
= 4 W, −40°C < T
J
< 150°C
t
d(ON)
10 20 msms
Rise Time (10% I
D
to 90% I
D
) t
r
20 40
Turn−OFF Delay Time t
d(OFF)
30 60
Fall Time (90% I
D
to 10% I
D
) t
f
20 40
Slew−Rate ON (90% V
D
to 10% V
D
) −dV
DS
/dt
ON
0.5 V/ms
Slew−Rate OFF (10% V
D
to 90% V
D
) dV
DS
/dt
OFF
0.5
SELF PROTECTION CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (Note 5)
Current Limit
V
GS
= 5.0 V, V
DS
= 10 V, T
J
@ 25°C
V
GS
= 5.0 V, V
DS
= 10 V, T
J
= 150°C (Note 6)
V
GS
= 5.0 V, V
DS
= 10 V, T
J
= −40°C (Note 6)
I
LIM
10
10
9
13
16
18
16
A
Temperature Limit (Turn−off) V
GS
= 5.0 V
V
GS
= 10 V
T
LIM(off)
150
150
175
165
200
185
°C
ESD ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Electro−Static Discharge Capability
Human Body Model (HBM) ESD 4000 V
Electro−Static Discharge Capability Machine Model (MM) ESD 400 V
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: Pulse Width = 300 ms, Duty Cycle = 2%.
5. Fault conditions are viewed as beyond the normal operating range of the part.
6. Not subject to production testing.

NCV8408BDTRKG

Mfr. #:
Manufacturer:
ON Semiconductor
Description:
Gate Drivers 42V 8A FULLY PROTECTED LO
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
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