N-Channel MOS FET
FKP253 June, 2007
Sanken Electric Co., Ltd.
T02-009EA-070531
■Features
●Low on-resistance
●Low input capacitance
●Avalanche energy capability guaranteed
■Package---FM20 (TO220 Full Mold)
■Applications
●PDP driving
●High speed switching
■Equivalent circuit
■Absolute maximum ratings
(Ta=25°C）
Parameter Symbol Rating Unit
Drain to Source Voltage VDSS 250 V
Gate to Source Voltage VGSS ±30 V
Continuous Drain Current ID ±20A A
Pulsed Drain Current ID(pulse) *
1
±80A A
Maximum Power Dissipation PD 40 (Tc=25°C) W
Single Pulse Avalanche Energy EAS *
2
160 mJ
Avalanche Current IAS 20 A
Channel Temperature Tch 150 °C
Storage Temperature Tstg －55 to 150 °C
*1 PW≤100μs，duty cycle≤１%
*2 V
DD=20V, L=740μH，ILp=20A, unclamped, RG=50Ω, See Fig.1
G (1)
S (3)
D (2)
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