FMMTL720TC

C

B

E

SOT23 PNP SILICON PLANAR HIGH GAIN

MEDIUM POWER TRANSISTOR

ISSUE 1 – DECEMBER 1997

FEATURES

Very low equivalent on-resistance; R

CE(sat)

=210mΩ at 1.5A

COMPLEMENTARY TYPE – FMMTL619

PARTMARKING DETAIL – L70

ABSOLUTE MAXIMUM RATINGS.

PARAMETER SYMBOL VALUE UNIT

Collector-Base Voltage V

CBO

-40 V

Collector-Emitter Voltage V

CEO

-40 V

Emitter-Base Voltage V

EBO

-5 V

Continuous Collector Current I

C

-1 A

Peak Pulse Current I

CM

-1.5 A

Base Current I

B

-200 mA

Power Dissipation at T

amb

=25°C P

tot

-500 mW

Operating and Storage Temperature Range T

j

:T

stg

-55 to +150 °C

FMMTL720

ELECTRICAL CHARACTERISTICS (at T

amb

= 25°C).

PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS.

Collector-Base

Breakdown Voltage

V

(BR)CBO

-40 -95 V

I

C

=-100µA

Collector-Emitter

Breakdown Voltage

V

(BR)CEO

-40 -70 V I

C

=-10mA*

Emitter-Base

Breakdown Voltage

V

(BR)EBO

-5 -8.8 V

I

E

=-100µA

Collector Cut-Off Current I

CBO

-10 nA V

CB

=-35V

Emitter Cut-Off Current I

EBO

-10 nA V

EB

=-4V

Collector Cut-Off Current I

CES

-10 nA V

CE

=-35V

Collector-Emitter

Saturation Voltage

V

CE(sat)

-40

-150

-225

-50

-200

-300

mV

mV

mV

I

C

=-100mA, I

B

=-10mA*

I

C

=-500mA, I

B

=-20mA*

I

C

=-1A, I

B

=-100mA*

Base-Emitter

Saturation Voltage

V

BE(sat)

-985 -1100 mV I

C

=-1A, I

B

=-100mA*

Base-Emitter

Turn On Voltage

V

BE(on)

-825 -1000 mV I

C

=-1A, V

CE

=-5V*

Static Forward

Current Transfer Ratio

h

FE

300

300

200

150

75

490

450

340

250

150

I

C

=-10mA, V

CE

=-5V

I

C

=-100mA, V

CE

=-5V*

I

C

=-0.5A, V

CE

=-5V*

I

C

=-1A, V

CE

=-5V*

I

C

=-1A, V

CE

=-2V*

Transition Frequency f

T

MHz I

C

=-50mA, V

CE

=-10V

f=100MHz

Collector-Base

Breakdown Voltage

C

obo

pF V

CB

=-10V, f=1MHz

Switching times t

on

t

off

61

61

ns

ns

I

C

=-1A, V

CC

=-10V

I

B1

=I

B2

=-10mA

*Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤ 2%

FMMTL720

FMMTL720

1mA

I

C

-Collector Current

VCE(sat) v IC

0

V

CE(sat)

- (V)

I

C

-Collector Current

1mA

VBE(sat) v IC

VBE(sat) - (V)

0

IC-Collector Current

1mA

V

BE(sat)

v I

C

0

VBE(sat) - (V)

hFE v IC

1mA

IC-Collector Current

0

hFE - Typical Gain

IC-Collector Current

V

BE(on)

v I

C

1mA

0

VBE(on) - (V)

I

C - Collector Current (A)

10m

0.1

VCE - Collector Emitter Voltage (V)

Safe Operating Area

+25°C

IC/IB=10

IC/IB=20

IC/IB=30

IC/IB=10

-55°C

+25°C

+100°C

+100°C

+25°C

-55°C

IC/IB=10

VCE=5V

-55°C

+25°C

+100°C

+100°C

+25°C

-55°C

VCE=5V

DC

1s

100ms

10ms

1ms

100µs

+150°C

+150°C

+150°C

10mA 100mA 1A 10A

0.2

0.4

0.6

10mA 100mA 1A 10A

0.2

0.4

0.6

10mA 100mA 1A 10A

700

350

10mA 100mA 1A 10A

0

01.5

1.0

0.5

10mA 100mA 1A 10A

0.7

1.4

110100

100m

1

10

TYPICAL CHARACTERISTICS

FMMTL720TC

Mfr. #:

Manufacturer:

Diodes Incorporated

Description:

Bipolar Transistors - BJT PNP Medium Power

Lifecycle:

New from this manufacturer.

Delivery:

DHL FedEx Ups TNT EMS

Payment:

T/T Paypal Visa MoneyGram Western Union

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