PI3B16233
3.3V, 16-Bit to 32-Bit
FET Mux/Demux NanoSwitch
2
PS8171E 09/29/04
Notes:
1. For Max. or Min. conditions, use appropriate value specified under Electrical Characteristics for the applicable device type.
2. Typical values are at V
CC
= 3.3V, T
A
= 25°C ambient and maximum loading.
3. Measured by the voltage drop between A and B pin at indicated current through the switch. ON resistance is determined
by the lower of the voltages on the two (A,B) pins.
4. This parameter is determined by device characterization but is not production tested.
Capacitance (T
A
= 25°C, f = 1 MHz)
Maximum Ratings
(Above which the useful life may be impaired. For user guidelines, not tested.)
Storage Temperature ...................................................... –65°C to +150°C
Ambient Temperature with Power Applied ...................... –40°C to +85°C
Supply Voltage Range ....................................................... –0.5V to +4.6V
DC Input Voltage ............................................................... –0.5V to +4.6V
DC Output Current ........................................................................ 120mA
Power Dissipation ............................................................................. 0.5W
Note:
Stresses greater than those listed under MAXIMUM RAT-
INGS may cause permanent damage to the device. This is a
stress rating only and functional operation of the device at these
or any other conditions above those indicated in the operational
sections of this specification is not implied. Exposure to
absolute maximum rating conditions for extended periods may
affect reliability.
DC Electrical Characteristics (Over the Operating Range, T
A
= –40°C to +85°C, V
CC
= 3.0V to 3.6V)
sretemaraPnoitpircseDsnoitidnoCtseT
)1(
.niM.pyT
)2(
.xaMstinU
V
HI
egatloVHGIHtupnIleveLhgiHcigoLdeetnarauG0.2
V
V
LI
egatloVWOLtupnIleveLwoLcigoLdeetnarauG5.0–8.0
I
HI
tnerruCHGIHtupnIV
CC
V;.xaM=
NI
V=
CC
1±
Aµ
I
LI
tnerruCWOLtupnIV
CC
V;.xaM=
NI
=DNG1±
I
HZO
tnerruCtuptuOecnadepmIhgiH0≤ B,A ≤ V
CC
1±
V
KI
egatloVedoiDpmalCV
CC
I,niM=
NI
Am81–=7.0–2.1–V
R
NO
ecnatsiseRNOhctiwS
)3(
V
CC
V,.niM=
NI
I,V0.0=
NO
Am46roAm84=
V
CC
V,.niM=
NI
I,V4.2=
NO
Am51=
5
01
8
51
Ω
sretemaraP
)5(
noitpircseDsnoitidnoCtseT.pyTstinU
C
NI
ecnaticapaCtupnI
V
NI
V0=
0.3
Fp
C
NO
nOhctiwS,ecnaticapaCB/A 0.52
