DS23003 Rev. 7 - 2 1 of 2 1N5820-1N5822
www.diodes.com
ã Diodes Incorporated
Features
1N5820 - 1N5822
3.0A SCHOTTKY BARRIER RECTIFIERS
DO-201AD
Dim Min Max
A
25.40 ¾
B
7.20 9.50
C
1.20 1.30
D
4.80 5.30
All Dimensions in mm
A A
B
C
D
Maximum Ratings and Electrical Characteristics
@ T
A
= 25°C unless otherwise specified
· Schottky Barrier Chip
· Guard Ring Die Construction for
Transient Protection
· Low Power Loss, High Efficiency
· High Surge Capability
· High Current Capability and Low Forward
Voltage Drop
· For Use in Low Voltage, High Frequency
Inverters, Free Wheeling, and Polarity
Protection Application
· Plastic Material: UL Flammability
Classification Rating 94V-0
Mechanical Data
· Case: Molded Plastic
· Terminals: Plated Leads Solderable per
MIL-STD-202, Method 208
· Polarity: Cathode Band
· Weight: 1.1 grams (approx)
· Mounting Position: Any
· Marking: Type Number
Single phase, half wave, 60Hz, resistive or inductive load.
For capacitive load, derate current by 20%.
Characteristic Symbol 1N5820 1N5821 1N5822 Unit
Peak Repetitive Reverse Voltage
Working Peak Reverse Voltage
DC Blocking Voltage
V
RRM
V
RWM
V
R
20 30 40 V
RMS Reverse Voltage
V
R(RMS)
14 21 28 V
Average Rectified Output Current
(Note 1) @ T
L
= 95°C
I
O
3.0 A
Non-Repetitive Peak Forward Surge Current 8.3ms
single half sine-wave superimposed on rated load
(JEDEC Method) @ T
L
= 75°C
I
FSM
80 A
Forward Voltage (Note 2) @ I
F
= 3.0A
@ I
F
= 9.4A
V
FM
0.475
0.850
0.500
0.900
0.525
0.950
V
Peak Reverse Current @ T
A
= 25°C
at Rated DC Blocking Voltage (Note 2) @ T
A
= 100°C
I
RM
2.0
20
mA
Typical Thermal Resistance (Note 3)
R
qJA
40
°C/W
R
qJL
10
Operating and Storage Temperature Range
T
j,
T
STG
-65 to +125 °C
Notes: 1. Measured at ambient temperature at a distance of 9.5mm from the case.
2. Short duration pulse test used to minimize self-heating effect.
3. Thermal resistance from junction to lead vertical P.C.B. mounted, 0.500" (12.7mm) lead length with 2.5 x 2.5" (63.5 x 63.5mm)
copper pad.
