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VS-22RIA10

P1-P3P4-P6P7-P8
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
4
Document Number: 93700
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Current Ratings Characteristics Fig. 1 - Current Ratings Characteristics
Fig. 2 - On-State Power Loss Characteristics
Fig. 3 - On-State Power Loss Characteristics
80
90
100
110
120
130
0 5 10 15 20 25
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Angle
22RIA Series
R (DC) = 0.86 K/W
thJC
80
90
100
110
120
130
0 10203040
DC
30°
60°
90°
120°
180°
Average On-state Current (A)
Maximum Allowable Case Temperature (°C)
Conduction Period
22RIA Series
R (DC) = 0.86 K/W
thJC
0255075100125
Maximum Allowable Ambient Temperature (°C)
R
=
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
2
K
/
W
3
K/
W
4
K
/
W
5K
/
W
7
K
/
W
1
0
K
/
W
0
5
10
15
20
25
30
35
40
0 5 10 15 20 25
RMS Limit
Conduction Angle
180°
120°
90°
60°
30°
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
22RIA Series
T = 125°C
J
0255075100125
Maximum Allowable Ambient Temperature (°C)
1
0
K
/
W
7
K
/
W
5
K
/
W
4
K
/
W
3
K
/
W
2
K
/
W
R
=
1
K
/
W
-
D
e
l
t
a
R
t
h
S
A
0
5
10
15
20
25
30
35
40
45
50
0 5 10 15 20 25 30 35
DC
180°
120°
90°
60°
30°
RMS Limit
Conduction Period
Maximum Average On-state Power Loss (W)
Average On-state Current (A)
22RIA Series
T = 125°C
J
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
5
Document Number: 93700
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 4 - Maximum Non-Repetitive Surge Current Fig. 5 - Maximum Non-Repetitive Surge Current
Fig. 6 - Forward Voltage Drop Characteristics
Fig. 7 - Thermal Impedance Z
thJC
Characteristics
150
175
200
225
250
275
300
325
350
375
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Peak Half Sine Wave On-state Current (A)
22RIA Series
Initial T = 125°C
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
J
At Any Rated Load Condition And With
Rated V Applied Following Surge.
RRM
150
175
200
225
250
275
300
325
350
375
400
0.01 0.1 1
Peak Half Sine Wave On-state Current (A)
Pulse Train Duration (s)
Maximum Non Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
Initial T = 125°C
No Voltage Reapplied
Rated V Reapplied
RRM
J
22RIA Series
1
10
100
1000
0.511.522.53
T = 25°C
J
Instantaneous On-state Current (A)
Instantaneous On-state Voltage (V)
T = 125°C
J
22RIA Series
0.01
0.1
1
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
22RIA Series
thJC
Transi ent Thermal Impedance Z (K/W)
Steady State Value
R = 0.86 K/W
(DC Operation)
thJC
VS-22RIA Series
www.vishay.com
Vishay Semiconductors
Revision: 19-Nov-15
6
Document Number: 93700
For technical questions within your region: DiodesAmericas@vishay.com
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 8 - Gate Characteristics
ORDERING INFORMATION TABLE
0.1
1
10
100
0.001 0.01 0.1 1 10 100
VGD
IGD
(b)
(a)
(1)
(2)
Instantaneous Gate Current (A)
Instantaneous Gate Voltage (V)
a) Recommended load line for
b) Recommended load line for
Rectangular gate pulse
tr<=1 µs, tp >= 6 µs
rated di/dt : 10V, 20ohms
<=30% rated di/dt : 10V, 65ohms
(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms
(4) PGM = 60W, tp = 1ms
tr <=0.5 µs, tp >= 6 µs
(3)
(4)
Tj = -65 °C
Tj = 25 °C
Tj = 125 °C
22RIA Series Frequency Limited by PG(AV)
- Current code
3
- Voltage code x 10 = V
RRM
(see Voltage Ratings table)
4
- None = Stud base TO-208AA (TO-48) 1/4" 28UNF-2A
M = Stud base TO-208AA (TO-48) M6 x 1
6
5
- Critical dV/dt:
None = 300 V/µs (standard value)
S90 = 1000 V/µs (special selection)
2
- Essential part number
Device code
51 32 4
22VS- RIA 120 M S90
6
1 - Vishay Semiconductors product
LINKS TO RELATED DOCUMENTS
Dimensions www.vishay.com/doc?95333
P1-P3P4-P6P7-P8

VS-22RIA10

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Manufacturer:
Vishay Semiconductors
Description:
SCRs 100 Volt 22 Amp
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