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FDMC007N08LCDC

P1-P3P4-P6P7-P8
© Semiconductor Components Industries, LLC, 2017
December, 2017 − Rev. 2
1 Publication Order Number:
FDMC007N08LCDC/D
FDMC007N08LCDC
N‐Channel Shielded Gate
POWERTRENCH
)
MOSFET
80 V, 64 A, 6.8 mW
General Description
This N-Channel MV MOSFET is produced using
ON Semiconductor’s advanced PowerTrench process that incorporates
Shielded Gate technology. This process has been optimized to
minimize on-state resistance and yet maintain superior switching
performance with best in class soft body diode.
Features
• Shielded Gate MOSFET Technology
• Max R
DS(on)
= 6.8 mW at V
GS
= 10 V, I
D
= 22 A
• Max R
DS(on)
= 11.1 mW at V
GS
= 4.5 V, I
D
= 18 A
• 5 V Drive Capable
• 50% Lower Q
rr
than Other MOSFET Suppliers
• Lowers Switching Noise/EMI
• MSL1 Robust Package Design
• 100% UIL Tested
• These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
• Primary DC−DC MOSFET
• Synchronous Rectifier in DC−DC and AC−DC
• Motor Drive
• Solar
MAXIMUM RATINGS (T
A
= 25°C unless otherwise noted)
Symbol
Parameter Value Unit
V
DS
Drain to Source Voltage 80 V
V
GS
Gate to Source Voltage ±20 V
I
D
Drain Current:
Continuous, T
C
= 25°C (Note 5)
Continuous, T
C
= 100°C (Note 5)
Continuous, T
A
= 25°C (Note 1a)
Pulsed (Note 4)
64
41
15
339
A
E
AS
Single Pulse Avalanche Energy
(Note 3)
150 mJ
P
D
Power Dissipation:
T
C
= 25°C
T
A
= 25°C (Note 1a)
57
3
W
T
J
, T
STG
Operating and Storage Junction
Temperature Range
−55 to +150 °C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
www.onsemi.com
Dual Coolt 33
(PQFN8)
CASE 483AY
See detailed ordering and shipping information on page 6 o
f
this data sheet.
ORDERING INFORMATION
S (1, 2, 3)
D (5, 6, 7, 8)
G (4)
N-CHANNEL MOSFET
MARKING DIAGRAM
&Z&3&K
7N08LDC
&Z = Assembly Plant Code
&3 = Numeric Date Code
&K = Lot Code
7N08LDC = Specific Device Code
V
DS
R
DS(ON)
MAX I
D
MAX
80 V
6.8 mW @ 10 V
22 A
11.1 mW @ 4.5 V
D
D
D
D
S
S
S
G
Pin 1
Top Bottom
FDMC007N08LCDC
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2
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case 2.2
°C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1a) 42
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted)
Symbol
Parameter Test Condition Min Typ Max Unit
OFF CHARACTERISTICS
BV
DSS
Drain to Source Breakdown Voltage
I
D
= 250 mA, V
GS
= 0 V
80 V
DBV
DSS
/DT
J
Breakdown Voltage Temperature
Coefficient
I
D
= 250 mA, referenced to 25°C
67 mV/°C
I
DSS
Zero Gate Voltage Drain Current V
DS
= 64 V, V
GS
= 0 V 1
mA
I
GSS
Gate to Source Leakage Current V
GS
= ±20 V, V
DS
= 0 V ±100 nA
ON CHARACTERISTICS
V
GS(th)
Gate to Source Threshold Voltage
V
GS
= V
DS
, I
D
= 130 mA
1.0 1.5 2.5 V
DV
GS(th)
/DT
J
Gate to Source Threshold Voltage
Temperature Coefficient
I
D
= 130 mA, referenced to 25°C
−5.2 mV/°C
R
DS(on)
Static Drain to Source On Resistance
V
GS
= 10 V, I
D
= 22 A 5.1 6.8 mW
V
GS
= 4.5 V, I
D
= 18 A 7.3 11.1
V
GS
= 10 V, I
D
= 22 A, T
J
= 125°C 9.5 12.5
g
FS
Forward Transconductance V
DS
= 5 V, I
D
= 22 A 80 S
DYNAMIC CHARACTERISTICS
C
iss
Input Capacitance
V
DS
= 40 V, V
GS
= 0 V, f = 1 MHz
2195 3070 pF
C
oss
Output Capacitance 521 730 pF
C
rss
Reverse Transfer Capacitance 25 40 pF
R
g
Gate Resistance 0.1 0.5 0.9
W
SWITCHING CHARACTERISTICS
t
d(on)
Turn-On Delay Time
V
DD
= 40 V, I
D
= 22 A, V
GS
= 10 V,
R
GEN
= 6 W
11 21 ns
t
r
Rise Time 3 10 ns
t
d(off)
Turn-Off Delay Time 36 58 ns
t
f
Fall Time 4 10 ns
Q
g
Total Gate Charge
V
GS
= 0 V to 10 V, V
DD
= 40 V,
I
D
= 22 A
31 44 nC
V
GS
= 0 V to 4.5 V, V
DD
= 40 V,
I
D
= 22 A
15 21 nC
Q
gs
Gate to Source Charge V
DD
= 40 V, I
D
= 22 A 5 nC
Q
gd
Gate to Drain “Miller” Charge V
DD
= 40 V, I
D
= 22 A 4 nC
Q
oss
Output Charge V
DD
= 40 V, V
GS
= 0 V 29 nC
Q
sync
Total Gate Charge Sync V
DS
= 0 V, I
D
= 22 A 28 nC
DRAIN-SOURCE DIODE CHARACTERISTICS
V
SD
Source to Drain Diode Forward Voltage
V
GS
= 0 V, I
S
= 2.5 A (Note 2) 0.7 1.2
V
V
GS
= 0 V, I
S
= 22 A (Note 2) 0.8 1.3
t
rr
Reverse Recovery Time I
F
= 11 A, di/dt = 300 A/ms 18 32 ns
Q
rr
Reverse Recovery Charge 24 38 nC
FDMC007N08LCDC
www.onsemi.com
3
ELECTRICAL CHARACTERISTICS (T
J
= 25°C unless otherwise noted) (continued)
Symbol UnitMaxTypMinTest ConditionParameter
DRAIN-SOURCE DIODE CHARACTERISTICS
t
rr
Reverse Recovery Time I
F
= 11 A, di/dt = 1000 A/ms 15 26 ns
Q
rr
Reverse Recovery Charge 60 96 nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
THERMAL CHARACTERISTICS
Symbol Parameter Value Unit
R
q
JC
Thermal Resistance, Junction to Case (Top Source) 6.0 °C/W
R
q
JC
Thermal Resistance, Junction to Case (Bottom Source) 2.2 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1a) 42 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1b) 105 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1c) 29 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1d) 40 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1e) 19 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1f) 23 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1g) 30 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1h) 79 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1i) 17 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1j) 26 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1k) 12 °C/W
R
q
JA
Thermal Resistance, Junction to Ambient (Note 1l) 16 °C/W
NOTES:
1. R
q
JA
is determined with the device mounted on a FR−4 board using a specified pad of 2 oz copper as shown below. R
q
JC
is guaranteed by
design while R
q
CA
is determined by the user’s board design.
42°C/W when mounted on
a 1 in
2
pad of 2 oz copper.
105°C/W when mounted on
a minimum pad of 2 oz copper.
a) b)
G
DF
DS
SF
SS
G
DF
DS
SF
SS
c. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in
2
pad of 2 oz copper
d. Still air, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
e. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in
2
pad of 2 oz copper
f. Still air, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
g. 200FPM Airflow, No Heat Sink,1 in2 pad of 2 oz copper
h. 200FPM Airflow, No Heat Sink, minimum pad of 2 oz copper
i. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, 1 in
2
pad of 2 oz copper
j. 200FPM Airflow, 20.9 × 10.4 × 12.7 mm Aluminum Heat Sink, minimum pad of 2 oz copper
k. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, 1 in
2
pad of 2 oz copper
l. 200FPM Airflow, 45.2 × 41.4 × 11.7 mm Aavid Thermalloy Part # 10−L41B−11 Heat Sink, minimum pad of 2 oz copper
2. Pulse Test: Pulse Width < 300 ms, Duty cycle < 2.0%.
3. E
AS
of 150 mJ is based on starting T
J
= 25°C; L = 3 mH, I
AS
= 10 A, V
DD
= 80 V, V
GS
= 10 V. 100% test at L = 0.1 mH, I
AS
= 32 A.
4. Pulsed Id please refer to Figure 11 SOA graph for more details.
5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal &
electro-mechanical application board design.
P1-P3P4-P6P7-P8

FDMC007N08LCDC

Mfr. #:
Buy FDMC007N08LCDC
Manufacturer:
ON Semiconductor
Description:
MOSFET FET 80V 64A 6.8 mOhm
Lifecycle:
New from this manufacturer.
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