MMBT3904T-7-F Datasheet MMBT3904T-7-F, MMBT3904T-7 | P1-P3

DS30270 Rev. 5 - 2 1 of 3 MMBT3904T

www.diodes.com

ã Diodes Incorporated

MMBT3904T

NPN SMALL SIGNAL SURFACE MOUNT TRANSISTOR

· Epitaxial Planar Die Construction

· Complementary PNP Type Available (MMBT3906T)

· Ultra-Small Surface Mount Package

· Available in Lead Free/RoHS Compliant Version (Note 2)

Characteristic Symbol Value Unit

Collector-Base Voltage

V

CBO

60 V

Collector-Emitter Voltage

V

CEO

40 V

Emitter-Base Voltage

V

EBO

6.0 V

Collector Current - Continuous

I

C

200 mA

Power Dissipation (Note 1)

P

d

150

mW

Thermal Resistance, Junction to Ambient (Note 1)

R

qJA

833 °C/W

Operating and Storage and Temperature Range

T

j

,T

STG

-55 to +150 °C

Features

Maximum Ratings

@ T

A

= 25°C unless otherwise specified

A

M

J

L

D

B

C

H

K

G

TOP VIEW

C

E

B

N

Mechanical Data

· Case: SOT-523

· Case Material: Molded Plastic. UL Flammability

Classification Rating 94V-0

· Moisture Sensitivity: Level 1 per J-STD-020C

· Terminals: Solderable per MIL-STD-202, Method 208

· Also Available in Lead Free Plating (Matte Tin Finish

annealed over Alloy 42 leadframe). Please see Ordering

Information, Note 5, on Page 2

· Terminal Connections: See Diagram

· Marking (See Page 2): 1N

· Ordering & Date Code Information, See Page 2

· Weight: 0.002 grams (approximate)

Notes: 1. Device mounted on FR-4 PCB, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on Diodes Inc. suggested pad layout

document AP02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf.

2. No purposefully added lead.

SOT-523

Dim Min Max Typ

A

0.15 0.30 0.22

B

0.75 0.85 0.80

C

1.45 1.75 1.60

D

¾¾0.50

G

0.90 1.10 1.00

H

1.50 1.70 1.60

J

0.00 0.10 0.05

K

0.60 0.80 0.75

L

0.10 0.30 0.22

M

0.10 0.20 0.12

N

0.45 0.65 0.50

a

0° 8°¾

All Dimensions in mm

E

B

C

SPICE MODEL: MMBT3904T

DS30270 Rev. 5 - 2 2 of 3 MMBT3904T

www.diodes.com

Electrical Characteristics

@ T

A

= 25°C unless otherwise specified

Characteristic Symbol Min Max Unit Test Condition

OFF CHARACTERISTICS (Note 3)

Collector-Base Breakdown Voltage

V

(BR)CBO

60 ¾ V

I

C

= 10mA, I

E

= 0

Collector-Emitter Breakdown Voltage

V

(BR)CEO

40 ¾ V

I

C

= 1.0mA, I

B

= 0

Emitter-Base Breakdown Voltage

V

(BR)EBO

6.0 ¾ V

I

E

= 10mA, I

C

= 0

Collector Cutoff Current

I

CEX

¾ 50 nA

V

CE

= 30V, V

EB(OFF)

= 3.0V

Base Cutoff Current

I

BL

¾ 50 nA

V

CE

= 30V, V

EB(OFF)

= 3.0V

ON CHARACTERISTICS (Note 3)

DC Current Gain

h

FE

40

70

100

60

30

¾

300

¾

I

C

= 100µA, V

CE

= 1.0V

I

C

= 1.0mA, V

CE

= 1.0V

I

C

= 10mA, V

CE

= 1.0V

I

C

= 50mA, V

CE

= 1.0V

I

C

= 100mA, V

CE

= 1.0V

Collector-Emitter Saturation Voltage

V

CE(SAT)

¾

0.20

0.30

V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

Base- Emitter Saturation Voltage

V

BE(SAT)

0.65

¾

0.85

0.95

V

I

C

= 10mA, I

B

= 1.0mA

I

C

= 50mA, I

B

= 5.0mA

SMALL SIGNAL CHARACTERISTICS

Output Capacitance

C

obo

¾ 4.0 pF

V

CB

= 5.0V, f = 1.0MHz, I

E

= 0

Input Capacitance

C

ibo

¾ 8.0 pF

V

EB

= 0.5V, f = 1.0MHz, I

C

= 0

Input Impedance

h

ie

1.0 10 kW

V

CE

= 10V, I

C

= 1.0mA,

f = 1.0kHz

Voltage Feedback Ratio

h

re

0.5 8.0 x 10

-4

Small Signal Current Gain

h

fe

100 400 ¾

Output Admittance

h

oe

1.0 40 mS

Current Gain-Bandwidth Product

f

T

300 ¾ MHz

V

CE

= 20V, I

C

= 10mA,

f = 100MHz

Noise Figure

NF ¾ 5.0 dB

V

CE

= 5.0Vdc, I

C

= 100mAdc,

R

S

= 1.0KW, f = 1.0MHz

SWITCHING CHARACTERISTICS

Delay Time

t

d

¾ 35 ns

V

CC

= 3.0V, I

C

= 10mA,

V

BE(off)

= - 0.5V, I

B1

= 1.0mA

Rise Time

t

r

¾ 35 ns

Storage Time

t

s

¾ 200 ns

V

CC

= 3.0V, I

C

= 10mA

Fall Time

t

f

¾ 50 ns

I

B1

= I

B2

= 1.0mA

Month Jan Feb March Apr May Jun Jul

Aug Sep Oct Nov Dec

Code

1234567

89 OND

Date Code Key

1N = Product Type Marking Code

YM = Date Code Marking

Y = Year (ex: N = 2002)

M = Month (ex: 9 = September)

1NYM

Marking Information

Notes: 3. Short duration test pulse used to minimize self-heating effect.

4. For Packaging Details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf.

5. For Lead Free/RoHS Compliant version part number, please add "-F" suffix to the part number above. Example: MMBT3904T-7-F.

Device

Packaging Shipping

MMBT3904T-7

SOT-523 3000/Tape & Reel

Ordering Information

(Note 4)

Year 2002 2003 2004 2005 2006

2007 2008 2009

Code

NPRST

UVW

DS30270 Rev. 5 - 2 3 of 3 MMBT3904T

www.diodes.com

0

5

1

5

10

0.1

1

10

100

C , INPUT CAPACITANCE (pF)

IBO

C , OUTPUT CAPACITANCE (pF)

OBO

V , COLLECTOR-BASE VOLTAGE (V)

CB

Fig. 2, Input and Output Capacitance vs.

Collector-Base Volta

g

e

Cibo

Cobo

f = 1MHz

0

100

150

50

200

2

5

0

0 100 200

P , POWER DISSIPATION (mW)

d

T , AMBIENT TEMPERATURE (°C)

A

Fi

g

. 1, Power Deratin

g

Curve

(see Note 1)

0.01

0.1

1

0.1 1 10

100

1000

V , COLLECTOR-EMITTER (V)

CE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

C

Fig. 4, Typical Collector-Emitter

Saturation Volta

g

e vs. Collector Current

I

C

I

B

=10

1

10

1000

100

0.1

1

10

1000

100

h , DC CURRENT GAIN

FE

I , COLLECTOR CURRENT (mA)

C

Fig. 3, Typical DC Current Gain vs

Collector Current

T = -25°C

A

T = +25°C

A

T = 125°C

A

V = 1.0V

CE

0.1

1

10

0.1

1

10

100

1000

V , BASE-EMITTER (V)

BE(SAT)

SATURATION VOLTAGE

I , COLLECTOR CURRENT (mA)

C

Fig. 5, Typical Base-Emitter

Saturation Volta

g

e vs. Collector Current

I

C

I

B

=10

T=25°C

A

T = 75°C

A

T = -25°C

A

T = 125°C

A

MMBT3904T-7-F

MMBT3904T-7-F

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