RJK6012DPE-00#J3

R07DS0445EJ0300 Rev.3.00 Page 1 of 6
Jun 17, 2011
Preliminary Datasheet
RJK6012DPE
Silicon N Channel MOS FET
High Speed Power Switching
Features
Low on-resistance
R
DS(on)
= 0.77 typ. (at I
D
= 5 A, V
GS
= 10 V, Ta = 25C)
Low leakage current
High speed switching
Outline
1
2
3
4
RENESAS Package code:
PRSS0004AE-B
(Package name:
LDPAK(S)-(1) )
1. Gate
2. Drain
3. Source
4. Drain
D
G
S
Absolute Maximum Ratings
(Ta = 25°C)
Item Symbol Ratings Unit
Drain to source voltage V
DSS
600 V
Gate to source voltage V
GSS
30 V
Drain current I
D
10 A
Drain peak current I
D (pulse)
Note1
20 A
Body-drain diode reverse drain current I
DR
10 A
Body-drain diode reverse drain peak current I
DR (pulse)
Note1
20 A
Avalanche current I
AP
Note3
3 A
Avalanche energy E
AR
Note3
0.49 mJ
Channel dissipation Pch
Note2
100 W
Channel to case thermal impedance ch-c 1.25 C/W
Channel temperature Tch 150 C
Storage temperature Tstg –55 to +150 C
Notes: 1. PW 10 s, duty cycle 1%
2. Value at Tc = 25C
3. STch = 25C, Tch 150C
R07DS0445EJ0300
(Previous: REJ03G1481-0200)
Rev.3.00
Jun 17, 2011
RJK6012DPE Preliminary
R07DS0445EJ0300 Rev.3.00 Page 2 of 6
Jun 17, 2011
Electrical Characteristics
(Ta = 25°C)
Item Symbol Min Typ Max Unit Test conditions
Drain to source breakdown voltage V
(BR)DSS
600 V I
D
= 10 mA, V
GS
= 0
Zero gate voltage drain current I
DSS
1 A V
DS
= 600 V, V
GS
= 0
Gate to source leak current I
GSS
0.1 A V
GS
= 30 V, V
DS
= 0
Gate to source cutoff voltage V
GS(off)
3.0 — 4.5 V V
DS
= 10 V, I
D
= 1 mA
Static drain to source on state
resistance
R
DS(on)
0.77 0.92 I
D
= 5 A, V
GS
= 10 V
Note4
Input capacitance Ciss 1100 pF
Output capacitance Coss 110 pF
Reverse transfer capacitance Crss 13 pF
V
DS
= 25 V
V
GS
= 0
f = 1 MHz
Turn-on delay time t
d(on)
— 30 — ns
Rise time t
r
— 22 — ns
Turn-off delay time t
d(off)
— 80 — ns
Fall time t
f
— 17 — ns
I
D
= 5 A
V
GS
= 10 V
R
L
= 60
Rg = 10
Total gate charge Qg 30 nC
Gate to source charge Qgs 6.5 nC
Gate to drain charge Qgd 14.5 nC
V
DD
= 480 V
V
GS
= 10 V
I
D
= 10 A
Body-drain diode forward voltage V
DF
0.88 1.50 V I
F
= 10 A, V
GS
= 0
Note4
Body-drain diode reverse recovery time t
rr
350 ns
I
F
= 10 A, V
GS
= 0
di
F
/dt = 100 A/s
Notes: 4. Pulse test
RJK6012DPE Preliminary
R07DS0445EJ0300 Rev.3.00 Page 3 of 6
Jun 17, 2011
Main Characteristics
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Typical Output Characteristics
Gate to Source Voltage V
GS
(V)
Drain Current I
D
(A)
Typical Transfer Characteristics
110010
1
10
0.1
10
1
0.1
100
0.01
Drain Current I
D
(A)
Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Drain Current (Typical)
Drain to Source Voltage V
DS
(V)
Drain Current I
D
(A)
Maximum Safe Operation Area
Case Temperature Tc (°C)
Static Drain to Source on State Resistance
R
DS(on)
(Ω)
Static Drain to Source on State Resistance
vs. Temperature (Typical)
23456
0
0.8
0.4
1.2
1.6
2.4
2.0
-25 0 502575100 125 150
Reverse Drain Current I
DR
(A)
Reverse Recovery Time t
rr
(ns)
Body-Drain Diode Reverse
Recovery Time (Typical)
V
GS
= 10 V
Pulse Test
I
D
= 10 A
V
DS
= 10 V
Pulse Test
Tc = 75°C
25°C
25°C
V
GS
= 10 V
Ta = 25°C
Pulse Test
2.5 A
20
16
12
8
4
0
0
4812 16
20
5.25 V
5 V
V
GS
= 4.75 V
5.5 V
Ta = 25°C
Pulse Test
5.75 V
6 V
7 V, 8 V, 10 V
5 A
110100
1000
100
10
di / dt = 100 A / μs
V
GS
= 0, Ta = 25°C
0.001
0.01
0.1
1
10
100
0.1 1 10 100 1000
Tc = 25°C
1 shot
Operation in this
area is limited by
R
DS(on)
PW = 100 μs
10 μs

RJK6012DPE-00#J3

Mfr. #:
Manufacturer:
Renesas Electronics
Description:
MOSFET MOSFET, 600V/10A, LDPAK(S)-(1), Pb Free
Lifecycle:
New from this manufacturer.
Delivery:
DHL FedEx Ups TNT EMS
Payment:
T/T Paypal Visa MoneyGram Western Union

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