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IR25606STRPBF

P1-P3P4-P6P7-P9P10-P11
IR25606SPBF
1 www.irf.com © 2013 International Rectifier May 1, 2013
Half-Bridge Driver
Ordering Information
Features
• Floating channel designed for bootstrap operation
• Fully operational to +600V
• Tolerant to negative transient voltage
• dV/dt immune
• Gate drive supply range from 10 to 20V
• Undervoltage lockout for both channels
• 3.3V, 5V and 15V input logic compatible
• Cross-conduction prevention logic
• Matched propagation delay for both channels
• Outputs in phase with inputs
• Logic and power ground +/-5V offset
• Internal 540ns dead-time
• Lower di/dt gate driver for better noise immunity
Description
The IR25606 is a high voltage, high speed power MOSFET
and IGBT driver with independent high and low side
referenced output channels. Proprietary HVIC and latch
immune CMOS technologies enable ruggedized monolithic
construction. The logic input is compatible with standard
CMOS or LSTTL output, down to 3.3V logic. The output
drivers feature a high pulse current buffer stage designed for
minimum driver cross-conduction. The floating channel can
be used to drive an N-channel power MOSFET or IGBT in
the high side configuration which operates up to 600 V.
Product Summary
V
OFFSET
600V max.
I
O+/-
200 mA / 350 mA
V
OUT
10 – 20V
Ton/off (typ.)
220 & 200 ns
Dead time (typ.)
540 ns
Package Options
8 Lead SOIC
Base Part Number
Package Type
Standard Pack
Orderable Part Number
Form
IR25606SPBF
SO8N
Tube
IR25606SPBF
IR25606SPBF
SO8N
Tape and Reel
IR25606STRPBF
IR25606SPBF
2 www.irf.com © 2013 International Rectifier May 1, 2013
Typical Connection Diagram
IR25606SPBF
3 www.irf.com © 2013 International Rectifier May 1, 2013
Absolute Maximum Ratings
Absolute maximum ratings indicate sustained limits beyond which damage to the device may occur. All voltage
parameters are absolute voltages referenced to COM. The thermal resistance and power dissipation ratings are
measured under board mounted and still air conditions.
Symbol
Definition
Min.
Max.
Units
V
B
High side floating absolute voltage
-0.3
625
V
V
S
High side floating supply offset voltage
V
B
- 25
V
B
+ 0.3
V
HO
High side floating output voltage
V
S
- 0.3
V
B
+ 0.3
V
CC
Low side and logic fixed supply voltage
-0.3
25
V
LO
Low side output voltage
-0.3
V
CC
+ 0.3
V
IN
Logic input voltage (HIN & LIN)
-0.3
V
CC
+ 0.3
dVs/dt
Allowable offset supply voltage transient
—
50
V/ns
P
D
Package power dissipation @ T
A
≤ +25°C
— 0.625 W
Rth
JA
Thermal resistance, junction to ambient
— 200
°C/W
T
J
Junction temperature
—
150
°C
T
S
Storage temperature
-55
150
T
L
Lead temperature (soldering, 10 seconds)
—
300
Recommended Operating Conditions
For proper operation the d
evice should be used within the recommended conditions. The V
S
offset rating is tested
with all supplies biased at 15V differential.
Symbol Definition Min. Max. Units
V
B
High side floating supply absolute voltage
V
S
+ 10
V
S
+ 20
V
V
S
High side floating supply offset voltage
†
600
V
HO
High side floating output voltage
V
S
V
B
V
CC
Low side and logic fixed supply voltage
10
20
V
LO
Low side output voltage
0
V
CC
V
IN
Logic input voltage
0
V
CC
T
A
Ambient temperature
-40
125
°C
† Logic operational for VS of -5 to +600V. Logic state held for VS of -5V to -VBS. (Please refer to Design Tip DT97-3 for more
details).
P1-P3P4-P6P7-P9P10-P11

IR25606STRPBF

Mfr. #:
Buy IR25606STRPBF
Manufacturer:
Infineon Technologies
Description:
Gate Drivers 2Ch 600V Half Bridge 200mA 350mA 10-20V
Lifecycle:
New from this manufacturer.
Delivery:
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