HMC636ST89E

For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
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9 - 1
AMPLIFIERS - LINEAR & POWER - SMT
HMC636ST89 / 636ST89E
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
v02.0311
General Description
Features
Functional Diagram
The HMC636ST89(E) is a GaAs pHEMT, High
Linearity, Low Noise, Wideband Gain Block Amplier
covering 0.2 to 4.0 GHz. Packaged in an industry
standard SOT89, the amplier can be used as either
a cascadable 50 Ohm gain stage, a PA Pre-Driver, a
Low Noise Amplier, or a Gain Block with up to +23
dBm output power. This versatile Gain Block Amplier
is powered from a single +5V supply and requires no
external matching components The internally matched
topology makes this amplier compatible with virtually
any PCB material or thickness.
Low Noise Figure: 2.2 dB
High P1dB Output Power: +22 dBm
High Output IP3: +40 dBm
Gain: 13 dB
50 Ohm I/O’s - No External Matching
Industry Standard SOT89 Package
Typical Applications
The HMC636ST89(E) is ideal for:
• Cellular / PCS / 3G
• WiMAX, WiBro, & Fixed Wireless
• CATV & Cable Modem
• Microwave Radio
Electrical Specications, Vs= 5.0 V, T
A
= +25° C
Parameter Min Typ. Max Min. Typ. Max. Units
Frequency Range 0.2 - 2.0 2.0 - 4.0 GHz
Gain 10 13 5 10 dB
Gain Variation Over Temperature 0.01 0.02 0.01 0.02 dB/ °C
Input Return Loss 10 10 dB
Output Return Loss 13 15 dB
Reverse Isolation 22 20 dB
Output Power for 1 dB Compression (P1dB) 19 22 20 23 dBm
Output Third Order Intercept (IP3) 36 39 36 39 dBm
Noise Figure 2.5 2 dB
Supply Current (Icq) 155 155 175 mA
Note: Data taken with broadband bias tee on device output.
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D
HMC636* PRODUCT PAGE QUICK LINKS
Last Content Update: 02/23/2017
COMPARABLE PARTS
View a parametric search of comparable parts.
EVALUATION KITS
HMC636ST89 Evaluation Board
DOCUMENTATION
Application Notes
AN-1363: Meeting Biasing Requirements of Externally
Biased RF/Microwave Amplifiers with Active Bias
Controllers
Data Sheet
HMC636 Data Sheet
TOOLS AND SIMULATIONS
HMC636 S-Parameter
REFERENCE MATERIALS
Quality Documentation
Package/Assembly Qualification Test Report: 3 Lead
Plastic SOT89 Package (QTR: 10002 REV: 02)
PCN: MS, QS, SOT, SOIC packages - Sn/Pb plating vendor
change
Semiconductor Qualification Test Report: PHEMT-F (QTR:
2013-00269)
DESIGN RESOURCES
HMC636 Material Declaration
PCN-PDN Information
Quality And Reliability
Symbols and Footprints
DISCUSSIONS
View all HMC636 EngineerZone Discussions.
SAMPLE AND BUY
Visit the product page to see pricing options.
TECHNICAL SUPPORT
Submit a technical question or find your regional support
number.
DOCUMENT FEEDBACK
Submit feedback for this data sheet.
This page is dynamically generated by Analog Devices, Inc., and inserted into this data sheet. A dynamic change to the content on this page will not
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For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824
Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com
Application Support: Phone: 978-250-3343 or apps@hittite.com
AMPLIFIERS - LINEAR & POWER - SMT
9
9 - 2
Output Return Loss vs. Temperature
Broadband Gain & Return Loss Gain vs. Temperature
Reverse Isolation vs. Temperature
Input Return Loss vs. Temperature
Noise Figure vs. Temperature
HMC636ST89 / 636ST89E
v02.0311
GaAs PHEMT HIGH LINEARITY
Gain Block, 0.2 - 4.0 GHz
-20
-15
-10
-5
0
5
10
15
20
0 1 2 3 4 5 6
S21
S11
S22
RESPONSE (dB)
FREQUENCY (GHz)
0
2
4
6
8
10
12
14
16
0 1 2 3 4
+25C
+85C
-40C
GAIN (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 1 2 3 4
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-20
-15
-10
-5
0
0 1 2 3 4
+25C
+85C
-40C
RETURN LOSS (dB)
FREQUENCY (GHz)
-25
-20
-15
-10
-5
0
0 1 2 3 4
+25C
+85C
-40C
REVERSE ISOLATION (dB)
FREQUENCY (GHz)
0
1
2
3
4
5
6
7
8
9
10
0 1 2 3 4
+25C
+85C
-40C
NOISE FIGURE (dB)
FREQUENCY (GHz)
Information furnished by Analog Devices is believed to be accurate and reliable. However, no
responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other
rights of third parties that may result from its use. Specifications subject to change without notice. No
license is granted by implication or otherwise under any patent or patent rights of Analog Devices.
Trademarks and registered trademarks are the property of their respective owners.
For price, delivery, and to place orders: Analog Devices, Inc.,
One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106
Phone: 781-329-4700 • Order online at www.analog.com
Application Support: Phone: 1-800-ANALOG-D

HMC636ST89E

Mfr. #:
Manufacturer:
Analog Devices / Hittite
Description:
RF Amplifier amp
Lifecycle:
New from this manufacturer.
Delivery:
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